AU6491600A - Apparatus for growing epitaxial layers on wafers - Google Patents

Apparatus for growing epitaxial layers on wafers

Info

Publication number: AU6491600A
Authority: AU; Australia
Prior art keywords: wafers; epitaxial layers; growing epitaxial; growing; layers
Prior art date: 1999-07-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU64916/00A

Inventor

Scott Beherrell

Alexander Gurary

Hong Q. Hou

Richard A. Stall

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Emcore Corp

Original Assignee

Emcore Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-07-26

Filing date

2000-07-24

Publication date

2001-02-13

2000-07-24 Application filed by Emcore Corp filed Critical Emcore Corp

2001-02-13 Publication of AU6491600A publication Critical patent/AU6491600A/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Mechanical Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

AU64916/00A 1999-07-26 2000-07-24 Apparatus for growing epitaxial layers on wafers Abandoned AU6491600A (en)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US14567299P	1999-07-26	1999-07-26
US60145672		1999-07-26
US61925400A	2000-07-19	2000-07-19
US09619254		2000-07-19
PCT/US2000/019879 WO2001007691A1 (en)	1999-07-26	2000-07-24	Apparatus for growing epitaxial layers on wafers

Publications (1)

Publication Number	Publication Date
AU6491600A true AU6491600A (en)	2001-02-13

Family

ID=26843200

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU64916/00A Abandoned AU6491600A (en)	1999-07-26	2000-07-24	Apparatus for growing epitaxial layers on wafers

Country Status (5)

Country	Link
EP (1)	EP1226292A1 (en)
JP (1)	JP2004513857A (en)
KR (1)	KR100565138B1 (en)
AU (1)	AU6491600A (en)
WO (1)	WO2001007691A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6506252B2 (en) *	2001-02-07	2003-01-14	Emcore Corporation	Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US6896929B2 (en) *	2001-08-03	2005-05-24	Applied Materials, Inc.	Susceptor shaft vacuum pumping
US6660928B1 (en)	2002-04-02	2003-12-09	Essential Research, Inc.	Multi-junction photovoltaic cell
DE102004060625A1 (en) *	2004-12-16	2006-06-29	Siltronic Ag	Coated semiconductor wafer and method and apparatus for producing the semiconductor wafer
US7055229B2 (en)	2003-12-31	2006-06-06	Intel Corporation	Support system for semiconductor wafers and methods thereof
US8603248B2 (en)	2006-02-10	2013-12-10	Veeco Instruments Inc.	System and method for varying wafer surface temperature via wafer-carrier temperature offset
WO2009049020A2 (en)	2007-10-11	2009-04-16	Valence Process Equipment, Inc.	Chemical vapor deposition reactor
US8022372B2 (en) *	2008-02-15	2011-09-20	Veeco Instruments Inc.	Apparatus and method for batch non-contact material characterization
KR20120012336A (en) *	2010-07-30	2012-02-09	엘지이노텍 주식회사	Susceptor and deposition apparatus including the same
CN105088186B (en) *	2011-11-23	2018-05-15	中微半导体设备(上海)有限公司	CVD reactor or outer layer growth reactor and its support device
US10316412B2 (en)	2012-04-18	2019-06-11	Veeco Instruments Inc.	Wafter carrier for chemical vapor deposition systems
US10167571B2 (en)	2013-03-15	2019-01-01	Veeco Instruments Inc.	Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
CN105264653B (en) *	2013-06-06	2018-02-16	揖斐电株式会社	Chip carrier and the epitaxial growth device using the chip carrier
EP3100298B1 (en)	2014-01-27	2020-07-15	Veeco Instruments Inc.	Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
ITUA20161980A1 (en) *	2016-03-24	2017-09-24	Lpe Spa	SUSCECTOR WITH DETACHED SUBSTRATE WITH DEPRESSION AND REACTOR FOR EPITAXIAL DEPOSITION
JP7188250B2 (en) *	2019-04-11	2022-12-13	株式会社Sumco	Vapor deposition apparatus and carrier used therefor
TWM630893U (en)	2020-09-03	2022-08-21	美商威科精密儀器公司	Substrate reactor for epitaxial deposition and substrate carrier for chemical vapor deposition reactor
WO2025085306A2 (en) *	2023-10-16	2025-04-24	Cvd Equipment Corporation	Uniform silicon carbide epitaxial layer deposition system utilizing fluid preheating

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5370739A (en) *	1992-06-15	1994-12-06	Materials Research Corporation	Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD

2000
- 2000-07-24 JP JP2001512955A patent/JP2004513857A/en active Pending
- 2000-07-24 KR KR1020027001052A patent/KR100565138B1/en not_active Expired - Fee Related
- 2000-07-24 WO PCT/US2000/019879 patent/WO2001007691A1/en not_active Ceased
- 2000-07-24 EP EP00952166A patent/EP1226292A1/en not_active Withdrawn
- 2000-07-24 AU AU64916/00A patent/AU6491600A/en not_active Abandoned

Also Published As

Publication number	Publication date
EP1226292A1 (en)	2002-07-31
JP2004513857A (en)	2004-05-13
WO2001007691A1 (en)	2001-02-01
KR100565138B1 (en)	2006-03-30
KR20020019574A (en)	2002-03-12

Publication	Publication Date	Title
AU2231201A (en)	2001-07-09	Production method for semiconductor device
AU6491600A (en)	2001-02-13	Apparatus for growing epitaxial layers on wafers
AU5823399A (en)	2000-04-26	An apparatus for holding a semiconductor wafer
AU2331200A (en)	2000-08-01	Device for positioning a wafer
AU4626000A (en)	2000-11-21	Method for transferring wafers and ring
AU4293399A (en)	1999-12-30	Method and device for transferring wafers
AU5324600A (en)	2001-01-30	Semiconductor wafer carrier
AU8036898A (en)	1999-01-04	Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
AU3213100A (en)	2000-08-18	Single-crystal material on non-single-crystalline substrate
HUP0401882A3 (en)	2005-11-28	Substrate for epitaxy
AU2002300573A1 (en)	2003-06-12	Photovoltaic Device and Method for Preparing the Same
AU5483700A (en)	2001-01-22	Gas distribution apparatus for semiconductor processing
AU7477800A (en)	2001-04-24	Gas distribution apparatus for semiconductor processing
AU5608700A (en)	2001-01-22	Gas distribution apparatus for semiconductor processing
AU7699300A (en)	2001-01-09	Silicon carbide epitaxial layers grown on substrates offcut towards &lt;1100&gt;
AU1786401A (en)	2001-06-04	Method for patterning devices
AU6952500A (en)	2001-02-19	System for aligning rectangular wafers
EP1056205A3 (en)	2005-01-19	Semiconductor apparatus
AU2001257584A1 (en)	2001-10-23	Wafer preparation systems and methods for preparing wafers
AU2002300570A1 (en)	2003-06-12	Photovoltaic Device and Method for Preparing the Same
AU5684799A (en)	2000-04-17	Substrate transport apparatus
AU2544900A (en)	2000-08-18	Method for fabricating thin film semiconductor devices
AU2002320277A1 (en)	2003-01-21	Method and apparatus for growing semiconductor crystals with a rigid support
EP1087040A4 (en)	2006-08-09	Method for producing silicon single crystal and apparatus for producing the same, and single crystal and wafer produced with the method
AU3620700A (en)	2000-09-28	A wafer transfer system and methods for using the same

Legal Events

Date	Code	Title	Description
2002-05-02	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase