AU2008301988B2 - Solar photovoltaic structure comprising quantized interaction sensitive nanocells - Google Patents
Solar photovoltaic structure comprising quantized interaction sensitive nanocells Download PDFInfo
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- AU2008301988B2 AU2008301988B2 AU2008301988A AU2008301988A AU2008301988B2 AU 2008301988 B2 AU2008301988 B2 AU 2008301988B2 AU 2008301988 A AU2008301988 A AU 2008301988A AU 2008301988 A AU2008301988 A AU 2008301988A AU 2008301988 B2 AU2008301988 B2 AU 2008301988B2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1228—Active materials comprising only Group IV materials porous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1437—Quantum wires or nanorods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92978107P | 2007-07-12 | 2007-07-12 | |
| US60/929,781 | 2007-07-12 | ||
| PCT/US2008/008450 WO2009038609A1 (fr) | 2007-07-12 | 2008-06-10 | Structure solaire photovoltaïque comportant des nanocellules sensibles aux photons |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2008301988A1 AU2008301988A1 (en) | 2009-03-26 |
| AU2008301988B2 true AU2008301988B2 (en) | 2011-04-07 |
Family
ID=40468196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2008301988A Ceased AU2008301988B2 (en) | 2007-07-12 | 2008-06-10 | Solar photovoltaic structure comprising quantized interaction sensitive nanocells |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20100193017A1 (fr) |
| EP (1) | EP2183089A4 (fr) |
| AU (1) | AU2008301988B2 (fr) |
| WO (1) | WO2009038609A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115683B1 (en) * | 2008-05-06 | 2012-02-14 | University Of South Florida | Rectenna solar energy harvester |
| US8748799B2 (en) * | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| GB2484526A (en) * | 2010-10-14 | 2012-04-18 | Yi Huang | Rectenna array for solar energy conversion |
| WO2014190189A2 (fr) * | 2013-05-22 | 2014-11-27 | Shih-Yuan Wang | Dispositifs photosensibles à absorption améliorée par microstructure |
| GB2517907B (en) | 2013-08-09 | 2018-04-11 | Drayson Tech Europe Ltd | RF Energy Harvester |
| WO2020155818A1 (fr) * | 2019-01-28 | 2020-08-06 | 南京奥谱依电子科技有限公司 | Puce de détection d'imagerie couplée à une antenne optique et procédé de préparation correspondant |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7087833B2 (en) * | 2002-09-05 | 2006-08-08 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
| US20070137697A1 (en) * | 2005-08-24 | 2007-06-21 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanoscale cometal structures |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3760257A (en) * | 1972-09-27 | 1973-09-18 | Nasa | Electromagnetic wave energy converter |
| US4445050A (en) * | 1981-12-15 | 1984-04-24 | Marks Alvin M | Device for conversion of light power to electric power |
| US5689603A (en) | 1993-07-07 | 1997-11-18 | Huth; Gerald C. | Optically interactive nanostructure |
| SG52858A1 (en) * | 1996-11-07 | 1998-09-28 | Univ Singapore | Micromachining using high energy light ions |
| US6038060A (en) * | 1997-01-16 | 2000-03-14 | Crowley; Robert Joseph | Optical antenna array for harmonic generation, mixing and signal amplification |
| US6284671B1 (en) * | 1998-11-19 | 2001-09-04 | National Research Council Of Canada | Selective electrochemical process for creating semiconductor nano-and micro-patterns |
| US7109517B2 (en) * | 2001-11-16 | 2006-09-19 | Zaidi Saleem H | Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors |
| US6989897B2 (en) * | 2002-06-12 | 2006-01-24 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
| GB2395059B (en) * | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
| US7091918B1 (en) * | 2003-10-24 | 2006-08-15 | University Of South Florida | Rectifying antenna and method of manufacture |
| US7498507B2 (en) * | 2005-03-16 | 2009-03-03 | General Electric Company | Device for solid state thermal transfer and power generation |
| US7655860B2 (en) * | 2005-04-01 | 2010-02-02 | North Carolina State University | Nano-structured photovoltaic solar cell and related methods |
| NL1029477C2 (nl) * | 2005-07-08 | 2007-04-18 | Innovy | Energie-omzetinrichting, generator en warmtepomp voorzien daarvan en werkwijze voor het vervaardigen daarvan. |
| US7754964B2 (en) * | 2005-08-24 | 2010-07-13 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanocoax structures |
| US7417219B2 (en) * | 2005-09-20 | 2008-08-26 | The Board Of Trustees Of The Leland Stanford Junior University | Effect of the plasmonic dispersion relation on the transmission properties of subwavelength holes |
| US20070137687A1 (en) * | 2005-12-15 | 2007-06-21 | The Boeing Company | Thermoelectric tunnelling device |
-
2008
- 2008-06-10 EP EP08832034A patent/EP2183089A4/fr not_active Withdrawn
- 2008-06-10 AU AU2008301988A patent/AU2008301988B2/en not_active Ceased
- 2008-06-10 WO PCT/US2008/008450 patent/WO2009038609A1/fr not_active Ceased
- 2008-07-10 US US12/452,585 patent/US20100193017A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7087833B2 (en) * | 2002-09-05 | 2006-08-08 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
| US20070137697A1 (en) * | 2005-08-24 | 2007-06-21 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanoscale cometal structures |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009038609A1 (fr) | 2009-03-26 |
| EP2183089A1 (fr) | 2010-05-12 |
| EP2183089A4 (fr) | 2012-10-31 |
| AU2008301988A1 (en) | 2009-03-26 |
| US20100193017A1 (en) | 2010-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| DA3 | Amendments made section 104 |
Free format text: THE NATURE OF THE AMENDMENT IS: AMEND THE INVENTION TITLE TO READ SOLAR PHOTOVOLTAIC STRUCTURE COMPRISING QUANTIZED INTERACTION SENSITIVE NANOCELLS |
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| FGA | Letters patent sealed or granted (standard patent) | ||
| MK14 | Patent ceased section 143(a) (annual fees not paid) or expired |