AU2003224233A1 - Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers - Google Patents
Method and apparatus for integrated chemical mechanical polishing of copper and barrier layersInfo
- Publication number
- AU2003224233A1 AU2003224233A1 AU2003224233A AU2003224233A AU2003224233A1 AU 2003224233 A1 AU2003224233 A1 AU 2003224233A1 AU 2003224233 A AU2003224233 A AU 2003224233A AU 2003224233 A AU2003224233 A AU 2003224233A AU 2003224233 A1 AU2003224233 A1 AU 2003224233A1
- Authority
- AU
- Australia
- Prior art keywords
- copper
- mechanical polishing
- chemical mechanical
- barrier layers
- integrated chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 230000004888 barrier function Effects 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36500102P | 2002-03-13 | 2002-03-13 | |
| US60/365,001 | 2002-03-13 | ||
| US10/199,471 | 2002-07-19 | ||
| US10/199,471 US20040014399A1 (en) | 2002-07-19 | 2002-07-19 | Selective barrier removal slurry |
| US41754402P | 2002-10-10 | 2002-10-10 | |
| US60/417,544 | 2002-10-10 | ||
| US10/346,425 | 2003-01-17 | ||
| US10/346,425 US6857947B2 (en) | 2002-01-17 | 2003-01-17 | Advanced chemical mechanical polishing system with smart endpoint detection |
| PCT/GB2003/001066 WO2003079428A1 (en) | 2002-03-13 | 2003-03-13 | Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2003224233A1 true AU2003224233A1 (en) | 2003-09-29 |
Family
ID=28046746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2003224233A Abandoned AU2003224233A1 (en) | 2002-03-13 | 2003-03-13 | Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20040023607A1 (en) |
| EP (1) | EP1483785A1 (en) |
| CN (1) | CN1653600A (en) |
| AU (1) | AU2003224233A1 (en) |
| TW (1) | TW200308007A (en) |
| WO (1) | WO2003079428A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005244123A (en) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | Polishing composition |
| CN1731567B (en) * | 2005-06-22 | 2010-08-18 | 中国科学院上海微系统与信息技术研究所 | IC copper interconnect one-step chemical machinery burnishing technics and relevant nanometer burnishing liquid |
| US8728934B2 (en) | 2011-06-24 | 2014-05-20 | Tessera, Inc. | Systems and methods for producing flat surfaces in interconnect structures |
| CN103100968B (en) * | 2011-11-11 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing device and the method using this device to grind silicon chip |
| CN103182676B (en) * | 2011-12-29 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad, the lapping device using this grinding pad and Ginding process |
| US10293462B2 (en) * | 2013-07-23 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad conditioner and method of reconditioning planarization pad |
| CN105817991A (en) * | 2015-01-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
| CN112338640B (en) * | 2020-09-28 | 2022-02-01 | 上海新昇半导体科技有限公司 | Chemical mechanical polishing method and apparatus |
| CN114952600B (en) * | 2022-07-11 | 2023-09-19 | 赛莱克斯微系统科技（北京）有限公司 | Planarization method and device for high-frequency transmission microstructure and electronic equipment |
| CN115985772A (en) * | 2022-12-09 | 2023-04-18 | 赛莱克斯微系统科技（北京）有限公司 | A method for planarizing wafers containing photoresist |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145689A (en) * | 1990-10-17 | 1992-09-08 | Exxon Chemical Patents Inc. | Meltblowing die |
| US5593344A (en) * | 1994-10-11 | 1997-01-14 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings and drive systems |
| US6050884A (en) * | 1996-02-28 | 2000-04-18 | Ebara Corporation | Polishing apparatus |
| US5916012A (en) * | 1996-04-26 | 1999-06-29 | Lam Research Corporation | Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher |
| US5762536A (en) * | 1996-04-26 | 1998-06-09 | Lam Research Corporation | Sensors for a linear polisher |
| US6012970A (en) * | 1997-01-15 | 2000-01-11 | Motorola, Inc. | Process for forming a semiconductor device |
| US7018282B1 (en) * | 1997-03-27 | 2006-03-28 | Koninklijke Philips Electronics N.V. | Customized polishing pad for selective process performance during chemical mechanical polishing |
| US5855792A (en) * | 1997-05-14 | 1999-01-05 | Integrated Process Equipment Corp. | Rinse water recycling method for semiconductor wafer processing equipment |
| US5756272A (en) * | 1997-05-19 | 1998-05-26 | Eastman Kodak Company | Simultaneous coatings of stearamide lubricant layer and transparent magnetic recording layer for photographic element |
| US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
| US6001730A (en) * | 1997-10-20 | 1999-12-14 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
| EP0954407B1 (en) * | 1997-11-21 | 2004-07-21 | Ebara Corporation | Polishing apparatus |
| US6248000B1 (en) * | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
| JP3701126B2 (en) * | 1998-09-01 | 2005-09-28 | 株式会社荏原製作所 | Substrate cleaning method and polishing apparatus |
| US6461226B1 (en) * | 1998-11-25 | 2002-10-08 | Promos Technologies, Inc. | Chemical mechanical polishing of a metal layer using a composite polishing pad |
| US6103628A (en) * | 1998-12-01 | 2000-08-15 | Nutool, Inc. | Reverse linear polisher with loadable housing |
| US6117779A (en) * | 1998-12-15 | 2000-09-12 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
| US6261158B1 (en) * | 1998-12-16 | 2001-07-17 | Speedfam-Ipec | Multi-step chemical mechanical polishing |
| US6241583B1 (en) * | 1999-02-04 | 2001-06-05 | Applied Materials, Inc. | Chemical mechanical polishing with a plurality of polishing sheets |
| US6244935B1 (en) * | 1999-02-04 | 2001-06-12 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
| US6475070B1 (en) * | 1999-02-04 | 2002-11-05 | Applied Materials, Inc. | Chemical mechanical polishing with a moving polishing sheet |
| EP1068928A3 (en) * | 1999-02-11 | 2003-08-13 | Applied Materials, Inc. | Chemical mechanical polishing processes and components |
| US6099662A (en) * | 1999-02-11 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | Process for cleaning a semiconductor substrate after chemical-mechanical polishing |
| US6322427B1 (en) * | 1999-04-30 | 2001-11-27 | Applied Materials, Inc. | Conditioning fixed abrasive articles |
| US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
| US6261157B1 (en) * | 1999-05-25 | 2001-07-17 | Applied Materials, Inc. | Selective damascene chemical mechanical polishing |
| JP3990073B2 (en) * | 1999-06-17 | 2007-10-10 | 株式会社荏原製作所 | Substrate cleaning apparatus and substrate cleaning method |
| US6241585B1 (en) * | 1999-06-25 | 2001-06-05 | Applied Materials, Inc. | Apparatus and method for chemical mechanical polishing |
| US6722963B1 (en) * | 1999-08-03 | 2004-04-20 | Micron Technology, Inc. | Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
| US6406363B1 (en) * | 1999-08-31 | 2002-06-18 | Lam Research Corporation | Unsupported chemical mechanical polishing belt |
| JP3439402B2 (en) * | 1999-11-05 | 2003-08-25 | Ｎｅｃエレクトロニクス株式会社 | Method for manufacturing semiconductor device |
| US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
| US6248006B1 (en) * | 2000-01-24 | 2001-06-19 | Chartered Semiconductor Manufacturing Ltd. | CMP uniformity |
| US6428394B1 (en) * | 2000-03-31 | 2002-08-06 | Lam Research Corporation | Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed |
| US6261959B1 (en) * | 2000-03-31 | 2001-07-17 | Lam Research Corporation | Method and apparatus for chemically-mechanically polishing semiconductor wafers |
| US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| US6361407B1 (en) * | 2000-08-02 | 2002-03-26 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
| US6634930B1 (en) * | 2000-08-09 | 2003-10-21 | Taiwan Semiconductor Manufacturing Co. Ltd | Method and apparatus for preventing metal corrosion during chemical mechanical polishing |
| US6540595B1 (en) * | 2000-08-29 | 2003-04-01 | Applied Materials, Inc. | Chemical-Mechanical polishing apparatus and method utilizing an advanceable polishing sheet |
| TW462908B (en) * | 2000-09-25 | 2001-11-11 | United Microelectronics Corp | Chemical mechanical polishing |
| US6464568B2 (en) * | 2000-12-04 | 2002-10-15 | Intel Corporation | Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
| US20020100743A1 (en) * | 2000-12-05 | 2002-08-01 | Bonner Benjamin A. | Multi-step polish process to control uniformity when using a selective slurry on patterned wafers |
| US6521523B2 (en) * | 2001-06-15 | 2003-02-18 | Silicon Integrated Systems Corp. | Method for forming selective protection layers on copper interconnects |
| US6566266B2 (en) * | 2001-07-18 | 2003-05-20 | Texas Instruments Incorporated | Method of polishing a layer comprising copper using an oxide inhibitor slurry |
| US6579798B2 (en) * | 2001-09-24 | 2003-06-17 | Texas Instruments Incorporated | Processes for chemical-mechanical polishing of a semiconductor wafer |
| US6736701B1 (en) * | 2001-11-20 | 2004-05-18 | Taiwan Semiconductor Manufacturing Company | Eliminate broken line damage of copper after CMP |
| US6726535B2 (en) * | 2002-04-25 | 2004-04-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing localized Cu corrosion during CMP |
| US6555477B1 (en) * | 2002-05-22 | 2003-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing Cu CMP corrosion |
| US6767274B2 (en) * | 2002-11-07 | 2004-07-27 | Taiwan Semiconductor Manufacturing Company | Method to reduce defect/slurry residue for copper CMP |
-
2003
- 2003-03-13 CN CNA038109743A patent/CN1653600A/en active Pending
- 2003-03-13 EP EP03720656A patent/EP1483785A1/en not_active Withdrawn
- 2003-03-13 US US10/387,698 patent/US20040023607A1/en not_active Abandoned
- 2003-03-13 AU AU2003224233A patent/AU2003224233A1/en not_active Abandoned
- 2003-03-13 TW TW092105543A patent/TW200308007A/en unknown
- 2003-03-13 WO PCT/GB2003/001066 patent/WO2003079428A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003079428A1 (en) | 2003-09-25 |
| CN1653600A (en) | 2005-08-10 |
| US20040023607A1 (en) | 2004-02-05 |
| EP1483785A1 (en) | 2004-12-08 |
| TW200308007A (en) | 2003-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |