AU2003223423A1 - Bipolar transistor with graded base layer - Google Patents

Bipolar transistor with graded base layer

Info

Publication number: AU2003223423A1
Authority: AU; Australia
Prior art keywords: base layer; bipolar transistor; graded base; graded; bipolar
Prior art date: 2002-04-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003223423A

Inventor

Paul M. Deluca

Charles R. Lutz

Kevin S. Stevens

Roger E. Welser

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Kopin Corp

Original Assignee

Kopin Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-04-05

Filing date

2003-03-31

Publication date

2003-10-27

2002-04-10 Priority claimed from US10/121,444 external-priority patent/US6847060B2/en

2003-03-31 Application filed by Kopin Corp filed Critical Kopin Corp

2003-10-27 Publication of AU2003223423A1 publication Critical patent/AU2003223423A1/en

Status Abandoned legal-status Critical Current

Links

AU2003223423A 2002-04-05 2003-03-31 Bipolar transistor with graded base layer Abandoned AU2003223423A1 (en)

Applications Claiming Priority (7)

Application Number	Priority Date	Filing Date	Title
US37075802P	2002-04-05	2002-04-05
US60/370,758		2002-04-05
US37164802P	2002-04-10	2002-04-10
US10/121,444		2002-04-10
US10/121,444 US6847060B2 (en)	2000-11-27	2002-04-10	Bipolar transistor with graded base layer
US60/371,648		2002-04-10
PCT/US2003/010143 WO2003088363A1 (en)	2002-04-05	2003-03-31	Bipolar transistor with graded base layer

Publications (1)

Publication Number	Publication Date
AU2003223423A1 true AU2003223423A1 (en)	2003-10-27

Family

ID=34108673

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003223423A Abandoned AU2003223423A1 (en)	2002-04-05	2003-03-31	Bipolar transistor with graded base layer

Country Status (4)

Country	Link
JP (1)	JP2005522883A (en)
CN (1)	CN100448024C (en)
AU (1)	AU2003223423A1 (en)
TW (1)	TWI288479B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103026492B (en) *	2011-06-30	2016-04-06	株式会社日本有机雷特显示器	Thin film transistor device and method for manufacturing thin film transistor device
CN103137666B (en) *	2011-11-23	2015-12-09	上海华虹宏力半导体制造有限公司	A kind of longitudinal P NP bipolar transistor and manufacture method thereof
CN105051873B (en)	2013-03-19	2017-06-13	株式会社村田制作所	Heterojunction bipolar transistor
CN103545398B (en) *	2013-10-16	2016-06-08	北京工业大学	The double-heterojunctiophototransistor phototransistor detector of the unidirectional carrier transport of base district gradual change
CN104900689B (en) *	2015-06-08	2019-05-17	中国科学院半导体研究所	Reduce the GaN base HBT epitaxial structure and growing method of base resistance rate
CN106653826B (en) *	2016-12-26	2019-01-08	厦门市三安集成电路有限公司	A kind of compound semiconductor heterojunction bipolar transistor
CN110649088A (en) *	2019-09-30	2020-01-03	厦门市三安集成电路有限公司	Epitaxial structure and low turn-on voltage transistors
CN114859200B (en) *	2022-04-28	2024-04-12	西安唐晶量子科技有限公司	Method for evaluating material characteristics of base layer of InGaP/GaAs HBT epitaxial wafer
CN116344585A (en) *	2023-03-29	2023-06-27	绍兴中芯集成电路制造股份有限公司	Heterojunction bipolar transistor and method of manufacturing the same
CN117116763B (en) *	2023-10-25	2024-01-23	新磊半导体科技(苏州)股份有限公司	Molecular beam epitaxial growth method of carbon doped HBT device
CN117766389B (en) *	2023-12-26	2025-07-04	全磊光电股份有限公司	Heterojunction bipolar transistor and MOCVD epitaxial growth method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2000133654A (en) *	1998-10-23	2000-05-12	Furukawa Electric Co Ltd:The	Manufacturing method of bipolar transistor
JP2000223497A (en) *	1999-01-28	2000-08-11	Furukawa Electric Co Ltd:The	Heterojunction bipolar transistor and manufacturing method thereof
FR2795871B1 (en) *	1999-07-01	2001-09-14	Picogiga Sa	HETEROJUNCTION TRANSISTOR III-V, IN PARTICULAR HEMT FIELD-EFFECT TRANSISTOR OR BIPOLAR HETEROJUNCTION TRANSISTOR
CN1111313C (en) *	1999-07-02	2003-06-11	北京工业大学	Bipolar heterojunction transistor

2003
- 2003-03-31 JP JP2003585186A patent/JP2005522883A/en active Pending
- 2003-03-31 AU AU2003223423A patent/AU2003223423A1/en not_active Abandoned
- 2003-03-31 CN CNB038075970A patent/CN100448024C/en not_active Expired - Lifetime
- 2003-04-01 TW TW92107363A patent/TWI288479B/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
TW200308088A (en)	2003-12-16
TWI288479B (en)	2007-10-11
CN1647281A (en)	2005-07-27
CN100448024C (en)	2008-12-31
JP2005522883A (en)	2005-07-28

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Legal Events

Date	Code	Title	Description
2004-12-23	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase