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AU2003220253A1 - Bifacial structure for tandem solar cell formed with amorphous semiconductor materials - Google Patents

Bifacial structure for tandem solar cell formed with amorphous semiconductor materials

Info

Publication number
AU2003220253A1
AU2003220253A1 AU2003220253A AU2003220253A AU2003220253A1 AU 2003220253 A1 AU2003220253 A1 AU 2003220253A1 AU 2003220253 A AU2003220253 A AU 2003220253A AU 2003220253 A AU2003220253 A AU 2003220253A AU 2003220253 A1 AU2003220253 A1 AU 2003220253A1
Authority
AU
Australia
Prior art keywords
solar cell
semiconductor materials
amorphous semiconductor
cell formed
tandem solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003220253A
Inventor
Rommel Noufi
David L. Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midwest Research Institute
Original Assignee
Midwest Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Institute filed Critical Midwest Research Institute
Publication of AU2003220253A1 publication Critical patent/AU2003220253A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
AU2003220253A 2003-03-14 2003-03-14 Bifacial structure for tandem solar cell formed with amorphous semiconductor materials Abandoned AU2003220253A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/007815 WO2004084282A1 (en) 2003-03-14 2003-03-14 Bifacial structure for tandem solar cell formed with amorphous semiconductor materials

Publications (1)

Publication Number Publication Date
AU2003220253A1 true AU2003220253A1 (en) 2004-10-11

Family

ID=33029243

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003220253A Abandoned AU2003220253A1 (en) 2003-03-14 2003-03-14 Bifacial structure for tandem solar cell formed with amorphous semiconductor materials

Country Status (2)

Country Link
AU (1) AU2003220253A1 (en)
WO (1) WO2004084282A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008520463A (en) 2004-11-19 2008-06-19 アクゾ ノーベル ナムローゼ フェンノートシャップ Method for preparing a flexible, mechanically compensated transparent laminate material
EP2031659A1 (en) * 2007-08-30 2009-03-04 Applied Materials, Inc. Method for creating a metal backing pin for a semiconductor element, in particular a solar cell
DE102007050288A1 (en) * 2007-10-18 2009-04-23 Otto Hauser Semiconductor device
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
WO2010085644A1 (en) 2009-01-22 2010-07-29 E. I. Du Pont De Nemours And Company Poly(vinyl butyral) encapsulant comprising chelating agents for solar cell modules
WO2010112129A1 (en) * 2009-03-12 2010-10-07 Oerlikon Solar Ag, Trübbach Bifacial multi-junction solar module
CN109004053B (en) * 2017-06-06 2024-03-29 通威太阳能（成都）有限公司 Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof
CN111416015A (en) * 2018-12-18 2020-07-14 领凡新能源科技(北京)有限公司 Solar cell and preparation method thereof
EP4456156A1 (en) * 2023-04-25 2024-10-30 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Tandem solar cell and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158681A (en) * 1979-05-29 1980-12-10 Matsushita Electric Ind Co Ltd Solar cell both sides of which are illuminated
JPS5896948A (en) * 1981-12-04 1983-06-09 Matsushita Electric Ind Co Ltd Solar energy converter
JPS62205672A (en) * 1986-03-06 1987-09-10 Sumitomo Electric Ind Ltd solar cells
JPH04343276A (en) * 1991-05-20 1992-11-30 Nippondenso Co Ltd Light position detector

Also Published As

Publication number Publication date
WO2004084282A1 (en) 2004-09-30

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase