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AU2003212349A1 - Device for depositing thin layers on a substrate - Google Patents

Device for depositing thin layers on a substrate

Info

Publication number
AU2003212349A1
AU2003212349A1 AU2003212349A AU2003212349A AU2003212349A1 AU 2003212349 A1 AU2003212349 A1 AU 2003212349A1 AU 2003212349 A AU2003212349 A AU 2003212349A AU 2003212349 A AU2003212349 A AU 2003212349A AU 2003212349 A1 AU2003212349 A1 AU 2003212349A1
Authority
AU
Australia
Prior art keywords
substrate
thin layers
depositing thin
depositing
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003212349A
Inventor
Holger Jurgensen
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2003212349A1 publication Critical patent/AU2003212349A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2003212349A 2002-03-15 2003-03-13 Device for depositing thin layers on a substrate Abandoned AU2003212349A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10211442A DE10211442A1 (en) 2002-03-15 2002-03-15 Device for depositing thin layers on a substrate used in the production of III-V semiconductors comprises a process chamber arranged in a reactor housing and having a base formed by a susceptor for receiving at least one substrate
DE10211442.0 2002-03-15
PCT/EP2003/002608 WO2003078681A1 (en) 2002-03-15 2003-03-13 Device for depositing thin layers on a substrate

Publications (1)

Publication Number Publication Date
AU2003212349A1 true AU2003212349A1 (en) 2003-09-29

Family

ID=27771333

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003212349A Abandoned AU2003212349A1 (en) 2002-03-15 2003-03-13 Device for depositing thin layers on a substrate

Country Status (7)

Country Link
EP (1) EP1485518A1 (en)
JP (1) JP2005520932A (en)
KR (1) KR20040101261A (en)
AU (1) AU2003212349A1 (en)
DE (1) DE10211442A1 (en)
TW (1) TW200305658A (en)
WO (1) WO2003078681A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035971A (en) * 2002-07-05 2004-02-05 Ulvac Japan Ltd Thin film manufacturing apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
JP5046334B2 (en) * 2004-10-11 2012-10-10 ソレラス・アドヴァンスト・コーティングス・ナムローゼ・フェンノートシャップ Long gas distribution system
DE102006018515A1 (en) 2006-04-21 2007-10-25 Aixtron Ag CVD reactor with lowerable process chamber ceiling
DE102007024798A1 (en) 2007-05-25 2008-11-27 Aixtron Ag Device for depositing nitrogen and gallium, indium or aluminum containing semiconductor layers on substrate, comprises process chamber, first inlet for gallium chloride-containing process gas, and second inlet for ammonia-containing gas
US20080317973A1 (en) 2007-06-22 2008-12-25 White John M Diffuser support
KR101065747B1 (en) * 2009-06-22 2011-09-19 주식회사 티지솔라 Plasma device having uniform gas supply means
DE102009043840A1 (en) * 2009-08-24 2011-03-03 Aixtron Ag CVD reactor with strip-like gas inlet zones and method for depositing a layer on a substrate in such a CVD reactor
CN102766902B (en) * 2011-05-05 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 Processing chamber device and the substrate processing equipment with this processing chamber device
DE102011107894A1 (en) 2011-07-18 2013-01-24 Creaphys Gmbh Coating device, in particular for the inner coating of hollow bodies, and coating method
DE102012110125A1 (en) 2012-10-24 2014-04-24 Aixtron Se Device for treating substrates with a replaceable ceiling plate and method for replacing such a ceiling plate
DE102014118704A1 (en) 2014-01-10 2015-07-16 Aixtron Se Gas inlet member of a CVD reactor with weight-reduced gas outlet plate
CN117004928B (en) * 2023-09-21 2023-12-26 上海谙邦半导体设备有限公司 A chemical vapor deposition wafer protection system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3927133A1 (en) * 1989-08-17 1991-02-21 Philips Patentverwaltung METHOD FOR DEPOSITING MICROCRYSTALLINE SOLID PARTICLES FROM THE GAS PHASE BY MEANS OF CHEMICAL VAPOR DEPOSITION
GB2241250A (en) * 1990-01-26 1991-08-28 Fuji Electric Co Ltd RF plasma CVD employing an electrode with a shower supply surface
JP2837993B2 (en) * 1992-06-19 1998-12-16 松下電工株式会社 Plasma processing method and apparatus
US5595602A (en) * 1995-08-14 1997-01-21 Motorola, Inc. Diffuser for uniform gas distribution in semiconductor processing and method for using the same
JP3310171B2 (en) * 1996-07-17 2002-07-29 松下電器産業株式会社 Plasma processing equipment
JP4422295B2 (en) * 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 CVD equipment

Also Published As

Publication number Publication date
DE10211442A1 (en) 2003-09-25
KR20040101261A (en) 2004-12-02
JP2005520932A (en) 2005-07-14
EP1485518A1 (en) 2004-12-15
WO2003078681A1 (en) 2003-09-25
TW200305658A (en) 2003-11-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase