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AU2003282852A1 - A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces - Google Patents

A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces

Info

Publication number
AU2003282852A1
AU2003282852A1 AU2003282852A AU2003282852A AU2003282852A1 AU 2003282852 A1 AU2003282852 A1 AU 2003282852A1 AU 2003282852 A AU2003282852 A AU 2003282852A AU 2003282852 A AU2003282852 A AU 2003282852A AU 2003282852 A1 AU2003282852 A1 AU 2003282852A1
Authority
AU
Australia
Prior art keywords
polishing
chemical mechanical
copper surfaces
mechanical polishing
corrosion retarding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003282852A
Inventor
Yaw S. Obeng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
psiloQuest Inc
Original Assignee
psiloQuest Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by psiloQuest Inc filed Critical psiloQuest Inc
Publication of AU2003282852A1 publication Critical patent/AU2003282852A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/0056Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AU2003282852A 2002-10-22 2003-10-14 A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces Abandoned AU2003282852A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42037102P 2002-10-22 2002-10-22
US60/420,371 2002-10-22
PCT/US2003/032691 WO2004037937A1 (en) 2002-10-22 2003-10-14 A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces

Publications (1)

Publication Number Publication Date
AU2003282852A1 true AU2003282852A1 (en) 2004-05-13

Family

ID=32176559

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003282852A Abandoned AU2003282852A1 (en) 2002-10-22 2003-10-14 A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces

Country Status (5)

Country Link
EP (1) EP1567606A1 (en)
JP (1) JP2006504270A (en)
CN (1) CN1705725A (en)
AU (1) AU2003282852A1 (en)
WO (1) WO2004037937A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050266226A1 (en) * 2000-11-29 2005-12-01 Psiloquest Chemical mechanical polishing pad and method for selective metal and barrier polishing
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US20060084271A1 (en) * 2004-10-20 2006-04-20 Yang Andy C Systems, methods and slurries for chemical mechanical polishing
JP5234916B2 (en) * 2007-01-30 2013-07-10 東レ株式会社 Laminated polishing pad
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JPH09132661A (en) * 1995-11-08 1997-05-20 Hitachi Chem Co Ltd Production of foam for cmp pad
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
FR2792643B1 (en) * 1999-04-22 2001-07-27 Clariant France Sa MECHANICAL AND CHEMICAL POLISHING COMPOSITION OF INSULATING MATERIAL BASED ON LOW DIELECTRIC POLYMER
US6740591B1 (en) * 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
DE10164262A1 (en) * 2001-12-27 2003-07-17 Bayer Ag Composition for the chemical mechanical polishing of metal and metal / dielectric structures

Also Published As

Publication number Publication date
JP2006504270A (en) 2006-02-02
WO2004037937A1 (en) 2004-05-06
EP1567606A1 (en) 2005-08-31
CN1705725A (en) 2005-12-07

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase