AU2003264342A1 - Double-gate type mos field effect transistor and production method therefor - Google Patents

Double-gate type mos field effect transistor and production method therefor

Info

Publication number: AU2003264342A1
Authority: AU; Australia
Prior art keywords: double; production method; field effect; effect transistor; type mos
Prior art date: 2002-08-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003264342A

Inventor

Meishoku Masahara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

National Institute of Advanced Industrial Science and Technology AIST

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-08-28

Filing date

2003-08-28

Publication date

2004-03-19

2003-08-28 Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST

2004-03-19 Publication of AU2003264342A1 publication Critical patent/AU2003264342A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs

AU2003264342A 2002-08-28 2003-08-28 Double-gate type mos field effect transistor and production method therefor Abandoned AU2003264342A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2002-248814		2002-08-28
JP2002248814		2002-08-28
PCT/JP2003/010933 WO2004021445A1 (en)	2002-08-28	2003-08-28	Double-gate type mos field effect transistor and production method therefor

Publications (1)

Publication Number	Publication Date
AU2003264342A1 true AU2003264342A1 (en)	2004-03-19

Family

ID=31972538

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003264342A Abandoned AU2003264342A1 (en)	2002-08-28	2003-08-28	Double-gate type mos field effect transistor and production method therefor

Country Status (3)

Country	Link
JP (1)	JP4355807B2 (en)
AU (1)	AU2003264342A1 (en)
WO (1)	WO2004021445A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004319808A (en) *	2003-04-17	2004-11-11	Takehide Shirato	Mis field effect transistor and its manufacturing method
US8896056B2 (en)	2007-12-05	2014-11-25	Unisantis Electronics Singapore Pte Ltd.	Surrounding gate transistor semiconductor device
JP5252740B2 (en) *	2007-12-05	2013-07-31	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	Semiconductor device
DE102008049723B4 (en) *	2008-09-30	2012-01-26	Advanced Micro Devices, Inc.	Transistor with embedded Si / Ge material with better substrate-spanning uniformity
JP6100071B2 (en) *	2012-04-30	2017-03-22	株式会社半導体エネルギー研究所	Method for manufacturing semiconductor device
CN103426758B (en) *	2012-05-15	2016-02-24	中芯国际集成电路制造(上海)有限公司	Deeply exhaust slot field-effect transistor and preparation method thereof
JP6437351B2 (en) *	2015-03-13	2018-12-12	東芝メモリ株式会社	Semiconductor memory device and semiconductor device manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2994670B2 (en) *	1989-12-02	1999-12-27	忠弘大見	Semiconductor device and manufacturing method thereof
US5302843A (en) *	1990-07-26	1994-04-12	Semiconductor Energy Laboratory Co., Ltd.	Improved vertical channel transistor
JPH09321296A (en) *	1996-05-27	1997-12-12	Toyota Central Res & Dev Lab Inc	Semiconductor device and manufacturing method thereof
US6518622B1 (en) *	2000-03-20	2003-02-11	Agere Systems Inc.	Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor
US6690040B2 (en) *	2001-09-10	2004-02-10	Agere Systems Inc.	Vertical replacement-gate junction field-effect transistor
JP2003101012A (en) *	2001-09-25	2003-04-04	Sony Corp	Semiconductor device and method of manufacturing the same
US6773994B2 (en) *	2001-12-26	2004-08-10	Agere Systems Inc.	CMOS vertical replacement gate (VRG) transistors
KR100400325B1 (en) *	2001-12-31	2003-10-01	주식회사 하이닉스반도체	Vertical transistor and method of manufacturing the same

2003
- 2003-08-28 JP JP2004532752A patent/JP4355807B2/en not_active Expired - Lifetime
- 2003-08-28 AU AU2003264342A patent/AU2003264342A1/en not_active Abandoned
- 2003-08-28 WO PCT/JP2003/010933 patent/WO2004021445A1/en not_active Ceased

Also Published As

Publication number	Publication date
JP4355807B2 (en)	2009-11-04
WO2004021445A1 (en)	2004-03-11
JPWO2004021445A1 (en)	2005-12-22

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Legal Events

Date	Code	Title	Description
2005-06-09	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase