AU2003261803A1 - Light emitting element and process for producing the same - Google Patents

Light emitting element and process for producing the same

Info

Publication number: AU2003261803A1
Authority: AU; Australia
Prior art keywords: producing; light emitting; same; emitting element; light
Prior art date: 2002-08-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003261803A

Inventor

Shucheng Chu

Hirofumi Kan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-08-30

Filing date

2003-08-28

Publication date

2004-03-19

2003-08-28 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

2004-03-19 Publication of AU2003261803A1 publication Critical patent/AU2003261803A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material

AU2003261803A 2002-08-30 2003-08-28 Light emitting element and process for producing the same Abandoned AU2003261803A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2002255007A JP4142374B2 (en)	2002-08-30	2002-08-30	Light emitting element
JP2002-255007		2002-08-30
PCT/JP2003/010961 WO2004021458A1 (en)	2002-08-30	2003-08-28	Light emitting element and process for producing the same

Publications (1)

Publication Number	Publication Date
AU2003261803A1 true AU2003261803A1 (en)	2004-03-19

Family

ID=31972862

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003261803A Abandoned AU2003261803A1 (en)	2002-08-30	2003-08-28	Light emitting element and process for producing the same

Country Status (4)

Country	Link
JP (1)	JP4142374B2 (en)
CN (1)	CN100364118C (en)
AU (1)	AU2003261803A1 (en)
WO (1)	WO2004021458A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1312734C (en) *	2005-01-28	2007-04-25	华中科技大学	Method for preparing beta-FeSi2 semiconductor film by femtosecond pulsed laser
JP4920343B2 (en)	2006-08-24	2012-04-18	浜松ホトニクス株式会社	Semiconductor element
JP5687606B2 (en) *	2011-11-14	2015-03-18	トヨタ自動車株式会社	Solar-heat conversion member, solar-heat conversion device, and solar power generation device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3992117B2 (en) *	1996-07-18	2007-10-17	昭和電工株式会社	GaP light emitting device substrate
GB2318680B (en) *	1996-10-24	2001-11-07	Univ Surrey	Optoelectronic semiconductor devices
JP2001064099A (en) *	1999-08-26	2001-03-13	Matsushita Electronics Industry Corp	Thin film formation
JP3401594B2 (en) *	1999-09-29	2003-04-28	独立行政法人産業技術総合研究所	Semiconductor device and manufacturing method thereof
JP2001127338A (en) *	1999-10-29	2001-05-11	Matsushita Electronics Industry Corp	Semiconductor device and its manufacturing method
JP2001244199A (en) *	2000-03-01	2001-09-07	Matsushita Electric Ind Co Ltd	Beta iron silicide deposition method
JP4080822B2 (en) *	2002-08-27	2008-04-23	浜松ホトニクス株式会社	Method for producing β-FeSi2 film

2002
- 2002-08-30 JP JP2002255007A patent/JP4142374B2/en not_active Expired - Fee Related
2003
- 2003-08-28 WO PCT/JP2003/010961 patent/WO2004021458A1/en not_active Ceased
- 2003-08-28 CN CNB038201828A patent/CN100364118C/en not_active Expired - Fee Related
- 2003-08-28 AU AU2003261803A patent/AU2003261803A1/en not_active Abandoned

Also Published As

Publication number	Publication date
CN1679175A (en)	2005-10-05
WO2004021458A1 (en)	2004-03-11
JP4142374B2 (en)	2008-09-03
JP2004095858A (en)	2004-03-25
CN100364118C (en)	2008-01-23

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Legal Events

Date	Code	Title	Description
2005-06-02	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase