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AU2003251281A1 - Multilayer substrate metallization for ic interconnection - Google Patents

Multilayer substrate metallization for ic interconnection

Info

Publication number
AU2003251281A1
AU2003251281A1 AU2003251281A AU2003251281A AU2003251281A1 AU 2003251281 A1 AU2003251281 A1 AU 2003251281A1 AU 2003251281 A AU2003251281 A AU 2003251281A AU 2003251281 A AU2003251281 A AU 2003251281A AU 2003251281 A1 AU2003251281 A1 AU 2003251281A1
Authority
AU
Australia
Prior art keywords
interconnection
multilayer substrate
substrate metallization
metallization
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003251281A
Inventor
Li Ming
Fan Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agency for Science Technology and Research Singapore
Original Assignee
Institute of Materials Research and Engineering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Materials Research and Engineering filed Critical Institute of Materials Research and Engineering
Publication of AU2003251281A1 publication Critical patent/AU2003251281A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H—ELECTRICITY
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01023—Vanadium [V]
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    • H01L2924/01024—Chromium [Cr]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01046—Palladium [Pd]
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
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    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)
AU2003251281A 2002-06-27 2003-06-26 Multilayer substrate metallization for ic interconnection Abandoned AU2003251281A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG200203893-3 2002-06-27
SG200203893A SG107600A1 (en) 2002-06-27 2002-06-27 Multilayer substrate metallization for ic interconnection
PCT/SG2003/000154 WO2004004003A1 (en) 2002-06-27 2003-06-26 Multilayer substrate metallization for ic interconnection

Publications (1)

Publication Number Publication Date
AU2003251281A1 true AU2003251281A1 (en) 2004-01-19

Family

ID=29997744

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003251281A Abandoned AU2003251281A1 (en) 2002-06-27 2003-06-26 Multilayer substrate metallization for ic interconnection

Country Status (3)

Country Link
AU (1) AU2003251281A1 (en)
SG (1) SG107600A1 (en)
WO (1) WO2004004003A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8659155B2 (en) 2009-11-05 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps
US9227257B2 (en) 2012-04-24 2016-01-05 Seagate Technology Llc Laser subassembly metallization for heat assisted magnetic recording
US10692830B2 (en) * 2017-10-05 2020-06-23 Texas Instruments Incorporated Multilayers of nickel alloys as diffusion barrier layers
US11127704B2 (en) * 2017-11-28 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with bump structure and method of making semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449955A (en) * 1994-04-01 1995-09-12 At&T Corp. Film circuit metal system for use with bumped IC packages
US6352634B1 (en) * 1998-06-10 2002-03-05 W. C. Heraeus Gmbh & Co. Kg Method for producing a lead-free substrate
US6445069B1 (en) * 2001-01-22 2002-09-03 Flip Chip Technologies, L.L.C. Electroless Ni/Pd/Au metallization structure for copper interconnect substrate and method therefor

Also Published As

Publication number Publication date
WO2004004003A1 (en) 2004-01-08
WO2004004003A8 (en) 2004-04-15
SG107600A1 (en) 2004-12-29

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