AU2002335988A1 - Ion imlantation method and apparatus - Google Patents
Ion imlantation method and apparatusInfo
- Publication number
- AU2002335988A1 AU2002335988A1 AU2002335988A AU2002335988A AU2002335988A1 AU 2002335988 A1 AU2002335988 A1 AU 2002335988A1 AU 2002335988 A AU2002335988 A AU 2002335988A AU 2002335988 A AU2002335988 A AU 2002335988A AU 2002335988 A1 AU2002335988 A1 AU 2002335988A1
- Authority
- AU
- Australia
- Prior art keywords
- imlantation
- ion
- ion imlantation
- imlantation method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0127692.2 | 2001-11-19 | ||
| GB0127692A GB0127692D0 (en) | 2001-11-19 | 2001-11-19 | Method of ion implantation and an implanter for performing the method |
| GB0205651.3 | 2002-03-11 | ||
| GB0205651A GB0205651D0 (en) | 2001-11-19 | 2002-03-11 | Method of ION implantation and an implanter for performing the method |
| PCT/GB2002/004886 WO2003044837A2 (en) | 2001-11-19 | 2002-10-30 | Ion imlantation method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2002335988A1 true AU2002335988A1 (en) | 2003-06-10 |
| AU2002335988A8 AU2002335988A8 (en) | 2003-06-10 |
Family
ID=26246784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002335988A Abandoned AU2002335988A1 (en) | 2001-11-19 | 2002-10-30 | Ion imlantation method and apparatus |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2002335988A1 (en) |
| WO (1) | WO2003044837A2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI375660B (en) | 2004-01-22 | 2012-11-01 | Semequip Inc | Isotopically-enriched boranes and methods of preparing them |
| TWI372725B (en) | 2004-01-30 | 2012-09-21 | Semequip Inc | Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes |
| JP5025633B2 (en) | 2004-02-02 | 2012-09-12 | エスイーエム・エクイップ インコーポレイテッド | Method for producing B10H102-ammonium salt and method for producing B18H22 |
| SG11201500684RA (en) | 2012-08-28 | 2015-04-29 | Praxair Technology Inc | Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60183768A (en) * | 1984-03-02 | 1985-09-19 | Hitachi Ltd | Radiation-resistant semiconductor devices |
| JPH02114665A (en) * | 1988-10-25 | 1990-04-26 | Nec Corp | Radiation resistant semiconductor device |
| US5395783A (en) * | 1993-02-16 | 1995-03-07 | Texas Instruments Incorporated | Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10 |
| US6107634A (en) * | 1998-04-30 | 2000-08-22 | Eaton Corporation | Decaborane vaporizer |
-
2002
- 2002-10-30 AU AU2002335988A patent/AU2002335988A1/en not_active Abandoned
- 2002-10-30 WO PCT/GB2002/004886 patent/WO2003044837A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003044837A3 (en) | 2003-10-16 |
| WO2003044837A2 (en) | 2003-05-30 |
| AU2002335988A8 (en) | 2003-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |