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AU2002368162A1 - Long superconductor fabrication - Google Patents

Long superconductor fabrication

Info

Publication number
AU2002368162A1
AU2002368162A1 AU2002368162A AU2002368162A AU2002368162A1 AU 2002368162 A1 AU2002368162 A1 AU 2002368162A1 AU 2002368162 A AU2002368162 A AU 2002368162A AU 2002368162 A AU2002368162 A AU 2002368162A AU 2002368162 A1 AU2002368162 A1 AU 2002368162A1
Authority
AU
Australia
Prior art keywords
superconductor fabrication
long superconductor
long
fabrication
superconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002368162A
Inventor
Judith Louise Driscoll
Xiaoding Qi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ip2ipo Innovations Ltd
Original Assignee
Imperial College Innovations Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0109662A external-priority patent/GB2374557A/en
Priority claimed from GB0131095A external-priority patent/GB0131095D0/en
Application filed by Imperial College Innovations Ltd filed Critical Imperial College Innovations Ltd
Publication of AU2002368162A1 publication Critical patent/AU2002368162A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/10Controlling or regulating
    • C30B19/106Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/225Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0324Processes for depositing or forming copper oxide superconductor layers from a solution
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002368162A 2001-04-19 2002-04-19 Long superconductor fabrication Abandoned AU2002368162A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB0109662A GB2374557A (en) 2001-04-19 2001-04-19 Producing superconductors by epitaxial growth
GB0109662.7 2001-04-19
GB0131095A GB0131095D0 (en) 2001-12-31 2001-12-31 "Superconductor buffer layers"
GB0131095.2 2001-12-31
PCT/GB2002/001814 WO2004015787A1 (en) 2001-04-19 2002-04-19 Long superconductor fabrication

Publications (1)

Publication Number Publication Date
AU2002368162A1 true AU2002368162A1 (en) 2004-02-25

Family

ID=31716909

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002368162A Abandoned AU2002368162A1 (en) 2001-04-19 2002-04-19 Long superconductor fabrication

Country Status (2)

Country Link
AU (1) AU2002368162A1 (en)
WO (1) WO2004015787A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE529900T1 (en) * 2007-07-02 2011-11-15 Nexans METHOD FOR PRODUCING A COATED CONDUCTOR WITH SIMPLIFIED LAYER ARCHITECTURE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587956B2 (en) * 1997-06-10 2004-11-10 古河電気工業株式会社 Oxide superconducting wire and its manufacturing method
US6743533B1 (en) * 1999-04-15 2004-06-01 Fujikura Ltd. Oxide superconductor, manufacturing method thereof, and base substrate therefor

Also Published As

Publication number Publication date
WO2004015787A1 (en) 2004-02-19

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase