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AU2002235146A1 - Non-thermionic sputter material transport device, methods of use, and materials produced thereby - Google Patents

Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Info

Publication number
AU2002235146A1
AU2002235146A1 AU2002235146A AU3514602A AU2002235146A1 AU 2002235146 A1 AU2002235146 A1 AU 2002235146A1 AU 2002235146 A AU2002235146 A AU 2002235146A AU 3514602 A AU3514602 A AU 3514602A AU 2002235146 A1 AU2002235146 A1 AU 2002235146A1
Authority
AU
Australia
Prior art keywords
thermionic
methods
transport device
material transport
materials produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002235146A
Inventor
Jerome J. Cuomo
N. Mark Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Publication of AU2002235146A1 publication Critical patent/AU2002235146A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3428—Cathode assembly for sputtering apparatus, e.g. Target using liquid targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU2002235146A 2000-11-30 2001-11-29 Non-thermionic sputter material transport device, methods of use, and materials produced thereby Abandoned AU2002235146A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25029700P 2000-11-30 2000-11-30
US60/250,297 2000-11-30
PCT/US2001/044525 WO2002043466A2 (en) 2000-11-30 2001-11-29 Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Publications (1)

Publication Number Publication Date
AU2002235146A1 true AU2002235146A1 (en) 2002-06-11

Family

ID=22947173

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002235146A Abandoned AU2002235146A1 (en) 2000-11-30 2001-11-29 Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Country Status (3)

Country Link
US (1) US6787010B2 (en)
AU (1) AU2002235146A1 (en)
WO (1) WO2002043466A2 (en)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3680029B2 (en) * 2001-08-08 2005-08-10 三菱重工業株式会社 Vapor growth method and vapor growth apparatus for metal thin film
US7383524B2 (en) * 2002-01-31 2008-06-03 Cadence Design Systems, Inc Structure for storing a plurality of sub-networks
US7931787B2 (en) * 2002-02-26 2011-04-26 Donald Bennett Hilliard Electron-assisted deposition process and apparatus
US20040137745A1 (en) * 2003-01-10 2004-07-15 International Business Machines Corporation Method and apparatus for removing backside edge polymer
EP1598450B1 (en) 2003-02-24 2011-09-21 Waseda University Beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD
WO2004095498A2 (en) * 2003-04-22 2004-11-04 Zond,Inc High-density plasma source using excited atoms
DE102004029466A1 (en) * 2004-06-18 2006-01-05 Leybold Optics Gmbh Medieninjektor
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
US20070235320A1 (en) 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
WO2007118204A2 (en) * 2006-04-06 2007-10-18 Applied Materials, Inc. Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US8308915B2 (en) * 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
JP5272361B2 (en) * 2006-10-20 2013-08-28 豊田合成株式会社 Sputter deposition apparatus and backing plate for sputter deposition apparatus
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US7994508B2 (en) 2007-08-02 2011-08-09 Applied Materials, Inc. Thin film transistors using thin film semiconductor materials
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
JP2009277882A (en) * 2008-05-14 2009-11-26 Showa Denko Kk Method of manufacturing group iii nitride semiconductor light emitting element, group iii nitride semiconductor light emitting element, and lamp
JP2009283785A (en) * 2008-05-23 2009-12-03 Showa Denko Kk Group iii nitride semiconductor laminate structure and manufacturing method thereof
WO2009149563A1 (en) * 2008-06-13 2009-12-17 Fablab Inc. A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8698400B2 (en) * 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
TWI386507B (en) * 2009-05-19 2013-02-21 Univ Nat Kaohsiung 1St Univ Sc Magnetron sputtering equipment
KR20120085254A (en) * 2009-09-05 2012-07-31 제너럴 플라즈마, 인크. Plasma enhanced chemical vapor deposition apparatus
KR101733718B1 (en) 2009-09-24 2017-05-10 어플라이드 머티어리얼스, 인코포레이티드 Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
JP5721813B2 (en) * 2010-05-04 2015-05-20 エリコン・サーフェス・ソリューションズ・アクチェンゲゼルシャフト，トリュープバッハ Method of spark deposition with ceramic target
JP5612707B2 (en) * 2010-12-28 2014-10-22 キヤノンアネルバ株式会社 Plasma CVD equipment
US9177756B2 (en) 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US20120255678A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode System for Substrate Plasma Processing
US20120258555A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode and Systems Implementing the Same
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
KR20140057597A (en) * 2011-08-11 2014-05-13 누보선, 인크. Sputtering systems for liquid target materials
RU2558320C1 (en) * 2014-05-21 2015-07-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Уфимский государственный авиационный технический университет" Surface hardening of titanium alloys in vacuum
CZ306980B6 (en) * 2016-09-27 2017-10-25 Fyzikální ústav AV ČR, v.v.i. A method of controlling the rate of deposition of thin layers in a vacuum multi-nozzle plasma system and a device for implementing this method
US10043732B1 (en) * 2017-06-05 2018-08-07 United Arab Emirates University Heat sink
US10256067B1 (en) 2018-01-02 2019-04-09 General Electric Company Low voltage drop, cross-field, gas switch and method of operation
US10665402B2 (en) 2018-02-08 2020-05-26 General Electric Company High voltage, cross-field, gas switch and method of operation
US10403466B1 (en) 2018-03-23 2019-09-03 General Electric Company Low sputtering, cross-field, gas switch and method of operation
JP7631192B2 (en) * 2018-10-24 2025-02-18 エヴァテック・アーゲー Liquid Sputter Target
TWI729757B (en) * 2020-04-06 2021-06-01 國立中央大學 Photovoltaic cell device and manufacturing methods of template thereof
US20250019819A1 (en) * 2021-11-22 2025-01-16 Infovion Inc. Electron-beam-assisted sputtering device and method therefor

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600218A (en) 1968-05-15 1971-08-17 Ibm Method for depositing insulating films of silicon nitride and aluminum nitride
US3609471A (en) 1969-07-22 1971-09-28 Gen Electric Semiconductor device with thermally conductive dielectric barrier
US3716759A (en) 1970-10-12 1973-02-13 Gen Electric Electronic device with thermally conductive dielectric barrier
EP0032788B2 (en) 1980-01-16 1989-12-06 National Research Development Corporation Method for depositing coatings in a glow discharge
EP0191504B1 (en) 1980-04-10 1989-08-16 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
JPS5816078A (en) 1981-07-17 1983-01-29 Toshiba Corp plasma etching equipment
US4407712A (en) 1982-06-01 1983-10-04 The United States Of America As Represented By The Secretary Of The Army Hollow cathode discharge source of metal vapor
US4521286A (en) 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
US4637853A (en) 1985-07-29 1987-01-20 International Business Machines Corporation Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
US4959136A (en) 1986-09-17 1990-09-25 Eastman Kodak Company Method for making an amorphous aluminum-nitrogen alloy layer
JPS63307254A (en) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd Oxide thin film production equipment
US5573742A (en) 1987-10-29 1996-11-12 Martin Marietta Corporation Method for the preparation of high purity aluminum nitride
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US4963239A (en) 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US4915805A (en) 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
DE3844064A1 (en) 1988-12-28 1990-07-05 Leybold Ag MAGNETRON PRINCIPLE CATALOG SPRAYING DEVICE WITH A HOLLOW CATODE AND A CYLINDRICAL TARGET
US4985742A (en) 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
US5234560A (en) 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
US5073245A (en) 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5228963A (en) 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5270263A (en) 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
PL173917B1 (en) 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Method of obtaining a crystalline lamellar structure
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5587014A (en) 1993-12-22 1996-12-24 Sumitomo Chemical Company, Limited Method for manufacturing group III-V compound semiconductor crystals
JPH07202265A (en) 1993-12-27 1995-08-04 Toyoda Gosei Co Ltd Method for manufacturing group III nitride semiconductor
US6440823B1 (en) 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
JP3409958B2 (en) 1995-12-15 2003-05-26 株式会社東芝 Semiconductor light emitting device
JP2925004B2 (en) 1996-03-22 1999-07-26 日本電気株式会社 Gallium nitride crystal growth method
JP3879173B2 (en) 1996-03-25 2007-02-07 住友電気工業株式会社 Compound semiconductor vapor deposition method
JP3164016B2 (en) 1996-05-31 2001-05-08 住友電気工業株式会社 Light emitting device and method for manufacturing wafer for light emitting device
US6020602A (en) 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US5954874A (en) 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US5858086A (en) 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
EP0874405A3 (en) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
ATE550461T1 (en) 1997-04-11 2012-04-15 Nichia Corp GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR
PL186905B1 (en) 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Method of producing high-resistance volumetric gan crystals
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US5915194A (en) 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
KR20010021496A (en) 1997-07-03 2001-03-15 추후제출 Elimination of defects in epitaxial films
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JPH11209199A (en) 1998-01-26 1999-08-03 Sumitomo Electric Ind Ltd Synthesis method of GaN single crystal
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
TW417315B (en) 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
WO1999066565A1 (en) 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
US6045612A (en) 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6063185A (en) 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6288417B1 (en) 1999-01-07 2001-09-11 Xerox Corporation Light-emitting devices including polycrystalline gan layers and method of forming devices
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6372041B1 (en) 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
US6140669A (en) 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
US6406540B1 (en) 1999-04-27 2002-06-18 The United States Of America As Represented By The Secretary Of The Air Force Process and apparatus for the growth of nitride materials
US6290774B1 (en) 1999-05-07 2001-09-18 Cbl Technology, Inc. Sequential hydride vapor phase epitaxy
DE19929591A1 (en) 1999-06-28 2001-01-04 Max Planck Gesellschaft Process for producing an epitaxial gallium nitride layer on a substrate comprises applying a precursor compound containing gallium carbodiimide on the substrate, and converting into crystalline gallium nitride by pyrolysis
JP4145437B2 (en) 1999-09-28 2008-09-03 住友電気工業株式会社 Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride

Also Published As

Publication number Publication date
WO2002043466A3 (en) 2002-09-12
US20020108847A1 (en) 2002-08-15
US6787010B2 (en) 2004-09-07
WO2002043466A9 (en) 2003-11-20
WO2002043466A2 (en) 2002-06-06

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