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AU2002228957A1 - Molecular electro-optical switching or memory device, and method of making the same - Google Patents

Molecular electro-optical switching or memory device, and method of making the same

Info

Publication number
AU2002228957A1
AU2002228957A1 AU2002228957A AU2895702A AU2002228957A1 AU 2002228957 A1 AU2002228957 A1 AU 2002228957A1 AU 2002228957 A AU2002228957 A AU 2002228957A AU 2895702 A AU2895702 A AU 2895702A AU 2002228957 A1 AU2002228957 A1 AU 2002228957A1
Authority
AU
Australia
Prior art keywords
making
memory device
same
optical switching
molecular electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002228957A
Inventor
Branimir Simic-Glavaski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2002228957A1 publication Critical patent/AU2002228957A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
AU2002228957A 2000-12-11 2001-12-11 Molecular electro-optical switching or memory device, and method of making the same Abandoned AU2002228957A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25466700P 2000-12-11 2000-12-11
US60/254,667 2000-12-11
PCT/US2001/047638 WO2002049124A2 (en) 2000-12-11 2001-12-11 Molecular electro-optical switching or memory device, and method of making the same

Publications (1)

Publication Number Publication Date
AU2002228957A1 true AU2002228957A1 (en) 2002-06-24

Family

ID=22965120

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002228957A Abandoned AU2002228957A1 (en) 2000-12-11 2001-12-11 Molecular electro-optical switching or memory device, and method of making the same

Country Status (6)

Country Link
US (2) US6937379B2 (en)
EP (1) EP1344219A2 (en)
JP (1) JP2004536714A (en)
AU (1) AU2002228957A1 (en)
IL (1) IL156404A0 (en)
WO (1) WO2002049124A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10324388A1 (en) * 2003-05-28 2004-12-30 Infineon Technologies Ag Circuit element with a first layer of an electrically insulating substrate material and method for producing a circuit element
CN100492697C (en) * 2003-08-22 2009-05-27 松下电器产业株式会社 Vertical organic FET and its manufacturing method
JP2005286007A (en) * 2004-03-29 2005-10-13 National Institute Of Advanced Industrial & Technology External stimulus-responsive information transfer molecular device
JP4751150B2 (en) * 2005-08-31 2011-08-17 株式会社東芝 Nitride semiconductor devices
JP4748311B2 (en) * 2005-10-31 2011-08-17 日本電気株式会社 Method and apparatus for measuring optical power of weak light, and optical communication system using the same
KR20080036794A (en) * 2006-10-24 2008-04-29 함병승 Gwangyang Logic Gate
JP5476560B2 (en) * 2008-08-11 2014-04-23 独立行政法人情報通信研究機構 Magnetic switching element using conductive nanowires
FR3011363B1 (en) * 2013-10-02 2017-02-17 Thales Sa NEUROMIMETRIC CIRCUIT AND METHOD OF MANUFACTURE

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US2661330A (en) 1950-10-21 1953-12-01 Little Inc A Method of electropolishing sterling silver
US2837473A (en) 1956-10-10 1958-06-03 Ca Nat Research Council Process for activation of silver alloy catalyst
US3119099A (en) 1960-02-08 1964-01-21 Wells Gardner Electronics Molecular storage unit
US3200057A (en) 1960-12-27 1965-08-10 Ford Motor Co Electrophoretic coating process
US3183359A (en) 1961-12-21 1965-05-11 Bell Telephone Labor Inc Optical modulator employing reflection from piezolelectric-semiconductive material
US3313938A (en) 1962-05-18 1967-04-11 Sylvania Electric Prod Transmission line light modulator
US3431437A (en) 1964-05-25 1969-03-04 Rca Corp Optical system for performing digital logic
US3462712A (en) 1966-11-23 1969-08-19 Bell Telephone Labor Inc Optical modulator
US3868651A (en) 1970-08-13 1975-02-25 Energy Conversion Devices Inc Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure
JPS4924968B1 (en) 1970-08-17 1974-06-26
DE2424549A1 (en) 1973-05-23 1974-12-12 John Michael Prof Thompson FLUID ANALYZER
US3833894A (en) 1973-06-20 1974-09-03 Ibm Organic memory device
US3839175A (en) 1973-06-28 1974-10-01 Owens Illinois Inc Electrodeposition of enzymes
DE2407110C3 (en) 1974-02-14 1981-04-23 Siemens AG, 1000 Berlin und 8000 München Sensor for the detection of a substance contained in a gas or a liquid
US4032901A (en) 1975-02-12 1977-06-28 Cyrus Levinthal System for storing and retrieving information at the molecular level
US4139348A (en) 1975-11-28 1979-02-13 Massachusetts Institute Of Technology Electrochemical process and apparatus to control the chemical state of a material
US4305390A (en) 1975-11-28 1981-12-15 Massachusetts Institute Of Technology Method for generating oxygen in an excited electronic state and inactivation of microorganisms
FR2356931A1 (en) 1976-07-02 1978-01-27 Anvar MOLECULAR OPTICAL MICROSCOPE WITH RAMAN EFFECT LASER EXCITED
GB1580137A (en) 1977-05-24 1980-11-26 Bnf Metals Tech Centre Electrolytic deposition of protective chromite-containing coatings
US4131517A (en) 1977-06-03 1978-12-26 Nippon Mining Co., Ltd. Surface treating process for copper foil for use in printed circuit
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IT1156196B (en) 1978-04-14 1987-01-28 Centro Speriment Metallurg TREATMENT TO IMPROVE THE ADHERENCE OF METAL SHEET PAINTS
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US4622170A (en) 1982-12-20 1986-11-11 Northwestern University Electrically conductive cofacially crystallizing organomacrocycle forming compositions
US4574366A (en) 1983-02-07 1986-03-04 The Johns Hopkins University Optical storage and switching devices using organic charge transfer salts
US4740984A (en) 1983-03-11 1988-04-26 The United States Of America As Represented By The Secretary Of The Navy Magnetically induced laser
US4804930A (en) 1983-09-26 1989-02-14 H.S.G. Venture Molecular electro-optical transistor and switch
CA1258313A (en) 1983-09-26 1989-08-08 Branimir Simic-Glavaski Molecular electro-optical transistor and switch
US4855243A (en) 1983-09-26 1989-08-08 H.S.G. Venture (A Joint Venture Partnership) Neurological and biological molecular electro-optical devices and methods
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US5202786A (en) * 1991-09-12 1993-04-13 The United States Of America As Represented By The Secretary Of The Navy Optical switching devices
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US6324091B1 (en) * 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage
US6272038B1 (en) * 2000-01-14 2001-08-07 North Carolina State University High-density non-volatile memory devices incorporating thiol-derivatized porphyrin trimers

Also Published As

Publication number Publication date
US20020071168A1 (en) 2002-06-13
US6937379B2 (en) 2005-08-30
EP1344219A2 (en) 2003-09-17
JP2004536714A (en) 2004-12-09
US20060001943A1 (en) 2006-01-05
IL156404A0 (en) 2004-01-04
US7136212B2 (en) 2006-11-14
WO2002049124A2 (en) 2002-06-20
WO2002049124A3 (en) 2003-01-30

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