[go: up one dir, main page]

AU2002212125A1 - Cvd reactor with a gas outlet ring made of solid graphite - Google Patents

Cvd reactor with a gas outlet ring made of solid graphite

Info

Publication number
AU2002212125A1
AU2002212125A1 AU2002212125A AU1212502A AU2002212125A1 AU 2002212125 A1 AU2002212125 A1 AU 2002212125A1 AU 2002212125 A AU2002212125 A AU 2002212125A AU 1212502 A AU1212502 A AU 1212502A AU 2002212125 A1 AU2002212125 A1 AU 2002212125A1
Authority
AU
Australia
Prior art keywords
gas outlet
ring made
cvd reactor
outlet ring
solid graphite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002212125A
Other languages
English (en)
Inventor
Holger Jurgensen
Johannes Kappeler
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002212125A1 publication Critical patent/AU2002212125A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002212125A 2000-09-01 2001-08-01 Cvd reactor with a gas outlet ring made of solid graphite Abandoned AU2002212125A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10043599.8 2000-09-01
DE10043599A DE10043599A1 (de) 2000-09-01 2000-09-01 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
PCT/EP2001/008886 WO2002018670A2 (fr) 2000-09-01 2001-08-01 Dispositif de depot de couches, en particulier cristallines, sur un ou plusieurs substrats, en particulier egalement cristallins

Publications (1)

Publication Number Publication Date
AU2002212125A1 true AU2002212125A1 (en) 2002-03-13

Family

ID=7654973

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002212125A Abandoned AU2002212125A1 (en) 2000-09-01 2001-08-01 Cvd reactor with a gas outlet ring made of solid graphite

Country Status (7)

Country Link
US (1) US7332038B2 (fr)
EP (1) EP1397528B8 (fr)
JP (1) JP4961092B2 (fr)
AU (1) AU2002212125A1 (fr)
DE (2) DE10043599A1 (fr)
TW (1) TW526276B (fr)
WO (1) WO2002018670A2 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10043599A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
DE102004009772A1 (de) * 2004-02-28 2005-09-15 Aixtron Ag CVD-Reaktor mit Prozesskammerhöhenstabilisierung
US20110114022A1 (en) * 2007-12-12 2011-05-19 Veeco Instruments Inc. Wafer carrier with hub
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
DE102008055582A1 (de) * 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
DE102010000554A1 (de) 2009-03-16 2010-09-30 Aixtron Ag MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte
KR20120007063A (ko) * 2009-04-24 2012-01-19 어플라이드 머티어리얼스, 인코포레이티드 측면 가스 출구를 가진 기판 지지대 및 방법
DE102009043848A1 (de) * 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
JP5409413B2 (ja) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
CN102465280B (zh) * 2010-11-04 2013-11-27 上海蓝光科技有限公司 双面生长型mocvd反应器
CN102766851B (zh) * 2011-05-04 2014-01-01 广东量晶光电科技有限公司 一种金属有机化学气相沉积反应器
JP5867913B2 (ja) * 2011-05-30 2016-02-24 昭和電工株式会社 炭化珪素膜のｃｖｄ装置
JP5897834B2 (ja) 2011-07-19 2016-03-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP5933202B2 (ja) 2011-08-05 2016-06-08 昭和電工株式会社 エピタキシャルウェハの製造装置及び製造方法
JP5865625B2 (ja) 2011-08-05 2016-02-17 昭和電工株式会社 エピタキシャルウェハの製造装置及び製造方法
DE102011083245B4 (de) 2011-09-22 2019-04-25 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer epitaktischen Schicht aus Silizium auf einer Halbleiterscheibe aus einkristallinem Silizium durch Gasphasenabscheidung in einer Prozesskammer
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
JP6037671B2 (ja) 2012-06-19 2016-12-07 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
KR101792941B1 (ko) * 2015-04-30 2017-11-02 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 화학기상증착장치 및 그 세정방법
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
DE102018128558A1 (de) * 2018-11-14 2020-05-14 Aixtron Se Gasauslassvorrichtung eines CVD-Reaktors
DE102019117479A1 (de) 2019-06-28 2020-12-31 Aixtron Se In einem CVD-Reaktor verwendbares flaches Bauteil
DE102020101066A1 (de) 2020-01-17 2021-07-22 Aixtron Se CVD-Reaktor mit doppelter Vorlaufzonenplatte
DE102020117669A1 (de) 2020-07-03 2022-01-05 Aixtron Se CVD-Reaktor mit aus einem Graphitschaum bestehenden gasleitenden Bauteilen
CN117684262B (zh) * 2024-02-04 2024-05-10 楚赟精工科技(上海)有限公司 气体注入装置和气相反应设备

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1667036A1 (de) * 1967-01-02 1971-05-27 Bayer Ag Verfahren und Vorrichtung zum direkten elektrischen Erhitzen von Gasen oder gasfoermigen Stoffen
JPS59149020A (ja) * 1983-02-16 1984-08-25 Hitachi Ltd 縦型反応炉
JPS61236604A (ja) * 1985-04-11 1986-10-21 Toshiba Ceramics Co Ltd β−Ｓｉ↓３Ｎ↓４の合成方法
FR2628984B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
FR2638020B1 (fr) * 1988-10-14 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a collecteur de gaz ameliore
JP2745819B2 (ja) * 1990-12-10 1998-04-28 日立電線株式会社 気相膜成長装置
JP3414475B2 (ja) * 1994-02-25 2003-06-09 スタンレー電気株式会社 結晶成長装置
DE19622402C1 (de) * 1996-06-04 1997-10-16 Siemens Ag Vorrichtung zum Behandeln wenigstens eines Substrats sowie Verwendung der Vorrichtung
US5891251A (en) * 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
ATE276381T1 (de) * 1999-07-13 2004-10-15 Aixtron Ag Abdichtungsmittel und dessen verwendung in abscheidungsreaktor
SE9903675D0 (sv) * 1999-10-13 1999-10-13 Abb Research Ltd A device and a method for heat treatment of an object in a susceptor
EP1240366B1 (fr) * 1999-12-22 2003-07-09 Aixtron AG Reacteur de depot chimique en phase vapeur et chambre de traitement destinee a ce reacteur
US6716289B1 (en) * 2000-08-09 2004-04-06 Itt Manufacturing Enterprises, Inc. Rigid gas collector for providing an even flow of gasses
US6666920B1 (en) * 2000-08-09 2003-12-23 Itt Manufacturing Enterprises, Inc. Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
US6325855B1 (en) * 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10043599A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
DE10043597A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesonder e kristallinen Substraten
DE10043600B4 (de) * 2000-09-01 2013-12-05 Aixtron Se Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten
DE10064944A1 (de) * 2000-09-22 2002-04-11 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens
KR100443908B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법

Also Published As

Publication number Publication date
JP4961092B2 (ja) 2012-06-27
US20040003779A1 (en) 2004-01-08
EP1397528B1 (fr) 2009-07-08
US7332038B2 (en) 2008-02-19
EP1397528A2 (fr) 2004-03-17
DE10043599A1 (de) 2002-03-14
TW526276B (en) 2003-04-01
EP1397528B8 (fr) 2009-09-09
WO2002018670A2 (fr) 2002-03-07
WO2002018670A3 (fr) 2003-12-24
DE50114978D1 (de) 2009-08-20
JP2004507897A (ja) 2004-03-11

Similar Documents

Publication Publication Date Title
AU2002212125A1 (en) Cvd reactor with a gas outlet ring made of solid graphite
AU2001268612A1 (en) Gas collector for epitaxial reactor
AU2002211730A1 (en) Plasma reactor with reduced reaction chamber
AU2001264550A1 (en) Hydrocarbon conversion process using a plurality of synthesis gas sources
AU3493799A (en) Catalyzed wall fuel gas reformer
AU5568699A (en) Pipe gasket with embedded ring
HUP0103766A3 (en) Procedure for utilization of gas what contains methane
AU7353900A (en) Methods of igniting a catalytic converter
AU2843000A (en) Inhibition of carbon deposition on fuel gas steam reformer walls
GB2353826B (en) Blade ring for a gas turbine
AU4859099A (en) Radial flow reactor
AU2906401A (en) Hydrogen and elemental carbon production from natural gas and other hydrocarbons
AU6314800A (en) Two-phase type methane fermentation reactor
ZA200108240B (en) Biomas gasification furnace and methanol synthesis system making use of gas produced through biomass gasification.
AU4934200A (en) Dielectric barrier gas reactors with non-axial flow
AU2002218248A1 (en) Cvd reactor with graphite-foam insulated, tubular susceptor
AU3580400A (en) Inhibition of carbon deposition on fuel gas steam reformer walls
AU2001282306A1 (en) Plasma enhanced gas reactor
AU2001228662A1 (en) Hyperpolarization of a gas
ZA985309B (en) Production of fuel gas
AU7135600A (en) Methanol process for natural gas conversion
AU2002353021A1 (en) Chemical vapor deposition reactor
AU3878595A (en) Hydrogen cyanide gas production
AU6565600A (en) Sealing ring, comprising a sealing diaphragm and production of the same
AU2002220778A1 (en) Device for multiple-zone injection of gas in a reactor