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AU2002254222A1 - Single level metal memory cell using chalcogenide cladding - Google Patents

Single level metal memory cell using chalcogenide cladding

Info

Publication number
AU2002254222A1
AU2002254222A1 AU2002254222A AU2002254222A AU2002254222A1 AU 2002254222 A1 AU2002254222 A1 AU 2002254222A1 AU 2002254222 A AU2002254222 A AU 2002254222A AU 2002254222 A AU2002254222 A AU 2002254222A AU 2002254222 A1 AU2002254222 A1 AU 2002254222A1
Authority
AU
Australia
Prior art keywords
memory cell
single level
level metal
metal memory
chalcogenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002254222A
Inventor
Manzur Gill
Tyler A. Lowrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of AU2002254222A1 publication Critical patent/AU2002254222A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
AU2002254222A 2002-02-22 2002-02-22 Single level metal memory cell using chalcogenide cladding Abandoned AU2002254222A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/007813 WO2003073512A1 (en) 2002-02-22 2002-02-22 Single level metal memory cell using chalcogenide cladding

Publications (1)

Publication Number Publication Date
AU2002254222A1 true AU2002254222A1 (en) 2003-09-09

Family

ID=27765166

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002254222A Abandoned AU2002254222A1 (en) 2002-02-22 2002-02-22 Single level metal memory cell using chalcogenide cladding

Country Status (4)

Country Link
JP (1) JP2006508522A (en)
KR (1) KR100603558B1 (en)
AU (1) AU2002254222A1 (en)
WO (1) WO2003073512A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100504700B1 (en) 2003-06-04 2005-08-03 삼성전자주식회사 Phase random access memory with high dencity
JP2005093619A (en) * 2003-09-16 2005-04-07 Sumio Hosaka Recording element
US7687830B2 (en) * 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
US8208293B2 (en) 2004-12-13 2012-06-26 Nxp B.V. Programmable phase-change memory and method therefor
US7408240B2 (en) * 2005-05-02 2008-08-05 Infineon Technologies Ag Memory device
KR100665227B1 (en) 2005-10-18 2007-01-09 삼성전자주식회사 Phase change memory device and manufacturing method thereof
KR100791008B1 (en) * 2006-12-26 2008-01-04 삼성전자주식회사 Phase change memory device having a phase change material pattern shared in cells adjacent to each other and an electronic product having the same
KR100971423B1 (en) * 2008-04-04 2010-07-21 주식회사 하이닉스반도체 Phase change memory device and manufacturing method thereof
JP5696378B2 (en) * 2010-06-15 2015-04-08 ソニー株式会社 Manufacturing method of storage device
US9741930B2 (en) * 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US6339544B1 (en) * 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device

Also Published As

Publication number Publication date
KR100603558B1 (en) 2006-07-24
KR20040083538A (en) 2004-10-02
JP2006508522A (en) 2006-03-09
WO2003073512A1 (en) 2003-09-04

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase