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AU2002250831A1 - Method for the production of sputtering targets - Google Patents

Method for the production of sputtering targets

Info

Publication number
AU2002250831A1
AU2002250831A1 AU2002250831A AU2002250831A AU2002250831A1 AU 2002250831 A1 AU2002250831 A1 AU 2002250831A1 AU 2002250831 A AU2002250831 A AU 2002250831A AU 2002250831 A AU2002250831 A AU 2002250831A AU 2002250831 A1 AU2002250831 A1 AU 2002250831A1
Authority
AU
Australia
Prior art keywords
production
sputtering targets
sputtering
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002250831A
Inventor
Klaus Hartig
Annette J. Krisko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bekaert NV SA
Original Assignee
Bekaert NV SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bekaert NV SA filed Critical Bekaert NV SA
Publication of AU2002250831A1 publication Critical patent/AU2002250831A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Catalysts (AREA)
  • Physical Vapour Deposition (AREA)
AU2002250831A 2001-01-17 2002-01-14 Method for the production of sputtering targets Abandoned AU2002250831A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26287801P 2001-01-17 2001-01-17
US60/262,878 2001-01-17
PCT/EP2002/000378 WO2002057508A2 (en) 2001-01-17 2002-01-14 Method for the production of sputtering targets

Publications (1)

Publication Number Publication Date
AU2002250831A1 true AU2002250831A1 (en) 2002-07-30

Family

ID=22999452

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002250831A Abandoned AU2002250831A1 (en) 2001-01-17 2002-01-14 Method for the production of sputtering targets

Country Status (4)

Country Link
EP (1) EP1352105A2 (en)
JP (1) JP2004520484A (en)
AU (1) AU2002250831A1 (en)
WO (1) WO2002057508A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2556786C (en) * 2003-02-24 2012-07-24 Tekna Plasma Systems Inc. Process and apparatus for the manufacture of sputtering targets
JP4022167B2 (en) * 2003-05-06 2007-12-12 株式会社不二機販 Photocatalytic coating method
DE102004032635A1 (en) * 2004-07-06 2006-02-09 Gfe Metalle Und Materialien Gmbh Process for producing a titanium-suboxide-based coating material, correspondingly produced coating material and sputtering target provided therewith
DE102004046390A1 (en) * 2004-09-24 2006-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for vacuum coating with a photo-semiconductive layer and application of the method
US9145601B2 (en) * 2010-10-27 2015-09-29 Instrument Technology Research Center, National Applied Research Laboratories Material for expanding the range of light absorption in an original constitution material
CN109364903B (en) * 2018-10-23 2021-05-25 江西科技师范大学 A kind of high specific surface area nano titanium dioxide photocatalytic coating and preparation method
CN112717924B (en) * 2021-01-07 2023-09-26 北京工业大学 Method for rapidly synthesizing monoatomic catalyst by plasma sputtering method and application thereof
CN113275028B (en) * 2021-04-20 2022-12-06 广东石油化工学院 A carbon nitride quantum dot/titanium oxide nanorod composite photocatalyst and its preparation method and application

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62161945A (en) * 1985-08-20 1987-07-17 Toyo Soda Mfg Co Ltd Production of ceramic sputtering target
US6193856B1 (en) * 1995-08-23 2001-02-27 Asahi Glass Company Ltd. Target and process for its production, and method for forming a film having a highly refractive index
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
JPH1112720A (en) * 1997-06-25 1999-01-19 Asahi Glass Co Ltd Titanium oxide film forming method

Also Published As

Publication number Publication date
WO2002057508A3 (en) 2003-01-03
EP1352105A2 (en) 2003-10-15
JP2004520484A (en) 2004-07-08
WO2002057508A2 (en) 2002-07-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase