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AU2001226100A1 - Method for high yield reticle formation - Google Patents

Method for high yield reticle formation

Info

Publication number
AU2001226100A1
AU2001226100A1 AU2001226100A AU2610001A AU2001226100A1 AU 2001226100 A1 AU2001226100 A1 AU 2001226100A1 AU 2001226100 A AU2001226100 A AU 2001226100A AU 2610001 A AU2610001 A AU 2610001A AU 2001226100 A1 AU2001226100 A1 AU 2001226100A1
Authority
AU
Australia
Prior art keywords
high yield
reticle formation
reticle
formation
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001226100A
Inventor
Christophe Pierrat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Numerical Technologies Inc
Original Assignee
Numerical Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Numerical Technologies Inc filed Critical Numerical Technologies Inc
Publication of AU2001226100A1 publication Critical patent/AU2001226100A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2001226100A 2000-09-29 2000-12-30 Method for high yield reticle formation Abandoned AU2001226100A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09676400 2000-09-29
US09/676,400 US6557162B1 (en) 2000-09-29 2000-09-29 Method for high yield reticle formation
PCT/US2000/035653 WO2002029491A1 (en) 2000-09-29 2000-12-30 Method for high yield reticle formation

Publications (1)

Publication Number Publication Date
AU2001226100A1 true AU2001226100A1 (en) 2002-04-15

Family

ID=24714351

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001226100A Abandoned AU2001226100A1 (en) 2000-09-29 2000-12-30 Method for high yield reticle formation

Country Status (6)

Country Link
US (2) US6557162B1 (en)
EP (1) EP1320784A1 (en)
JP (1) JP3957631B2 (en)
KR (1) KR100668192B1 (en)
AU (1) AU2001226100A1 (en)
WO (1) WO2002029491A1 (en)

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Also Published As

Publication number Publication date
KR20040004385A (en) 2004-01-13
KR100668192B1 (en) 2007-01-11
US6557162B1 (en) 2003-04-29
WO2002029491A1 (en) 2002-04-11
JP3957631B2 (en) 2007-08-15
JP2004511013A (en) 2004-04-08
US6968527B2 (en) 2005-11-22
EP1320784A1 (en) 2003-06-25
US20030154461A1 (en) 2003-08-14

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