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AU2001297025A1 - Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating same - Google Patents

Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating same

Info

Publication number
AU2001297025A1
AU2001297025A1 AU2001297025A AU9702501A AU2001297025A1 AU 2001297025 A1 AU2001297025 A1 AU 2001297025A1 AU 2001297025 A AU2001297025 A AU 2001297025A AU 9702501 A AU9702501 A AU 9702501A AU 2001297025 A1 AU2001297025 A1 AU 2001297025A1
Authority
AU
Australia
Prior art keywords
cdmgo
znmgo
optoelectronic
alloys
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001297025A
Inventor
John F. Muth
Jagdish Narayan
Ajay Kumar Sharma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Publication of AU2001297025A1 publication Critical patent/AU2001297025A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
AU2001297025A 2000-10-13 2001-10-12 Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating same Abandoned AU2001297025A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/687,519 US6423983B1 (en) 2000-10-13 2000-10-13 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
US09/687,519 2000-10-13
PCT/US2001/042640 WO2002031890A2 (en) 2000-10-13 2001-10-12 OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME

Publications (1)

Publication Number Publication Date
AU2001297025A1 true AU2001297025A1 (en) 2002-04-22

Family

ID=24760730

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001297025A Abandoned AU2001297025A1 (en) 2000-10-13 2001-10-12 Optoelectronic and microelectronic devices including cubic znmgo and/or cdmgo alloys and methods of fabricating same

Country Status (3)

Country Link
US (2) US6423983B1 (en)
AU (1) AU2001297025A1 (en)
WO (1) WO2002031890A2 (en)

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AU2001234468A1 (en) 2000-01-19 2001-07-31 North Carolina State University Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same
GB2361480B (en) * 2000-04-19 2002-06-19 Murata Manufacturing Co Method for forming p-type semiconductor film and light emitting device using the same
US7132668B2 (en) * 2000-06-26 2006-11-07 University Of Maryland MgZnO based UV detectors
JP4540201B2 (en) * 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 Method for manufacturing semiconductor device having ZnO-based oxide semiconductor layer
JP2003142479A (en) * 2001-11-02 2003-05-16 Fujitsu Ltd Semiconductor device, epitaxial film manufacturing method, and laser ablation apparatus
JP3749498B2 (en) * 2002-03-26 2006-03-01 スタンレー電気株式会社 Crystal growth substrate and ZnO-based compound semiconductor device
KR100486889B1 (en) * 2002-06-14 2005-05-03 학교법인고려중앙학원 Method for manufacturing ZnMgO alloy powder by the mechanical alloying
JP3905824B2 (en) * 2002-11-25 2007-04-18 大阪府 Single crystal gallium nitride localized substrate and manufacturing method thereof
JP4034208B2 (en) * 2003-02-25 2008-01-16 ローム株式会社 Transparent electrode
CN1307707C (en) * 2003-09-19 2007-03-28 中国科学院上海微系统与信息技术研究所 Metal-isolation layer-semiconductor structure xontaining magnesiam-zinc-oxygen and preparing process
US7081371B1 (en) * 2004-09-02 2006-07-25 University Of Puerto Rico Fabrication of stable, wide-bandgap thin films of Mg, Zn and O
CN100356642C (en) * 2005-01-28 2007-12-19 浙江大学 C-MgxZn1-xO/MgO multi-quantum sink heterogeneous structural materials and producing process thereof
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
US8222057B2 (en) * 2006-08-29 2012-07-17 University Of Florida Research Foundation, Inc. Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
US8363775B1 (en) 2006-11-27 2013-01-29 The United States Of America As Represented By The Secretary Of The Navy Doping of semiconductor materials by nuclear transmutation
US8222740B2 (en) * 2008-10-28 2012-07-17 Jagdish Narayan Zinc oxide based composites and methods for their fabrication
US8362476B2 (en) * 2009-03-18 2013-01-29 University Of Central Florida Research Foundation, Inc. Cubic semiconductor alloys for deep UV applications
US8961687B2 (en) * 2009-08-31 2015-02-24 Alliance For Sustainable Energy, Llc Lattice matched crystalline substrates for cubic nitride semiconductor growth
US8575471B2 (en) * 2009-08-31 2013-11-05 Alliance For Sustainable Energy, Llc Lattice matched semiconductor growth on crystalline metallic substrates
US8507365B2 (en) * 2009-12-21 2013-08-13 Alliance For Sustainable Energy, Llc Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
WO2012074523A1 (en) 2010-12-01 2012-06-07 Alliance For Sustainable Energy, Llc Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
US9425249B2 (en) 2010-12-01 2016-08-23 Alliance For Sustainable Energy, Llc Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
JP5660004B2 (en) * 2011-10-27 2015-01-28 トヨタ自動車株式会社 Method for producing ZnMgO film
CN103107244B (en) * 2013-02-17 2015-12-02 淮阴师范学院 The conductive film preparation method that a kind of cadmium oxide base transmission region is adjustable
CN103074577B (en) * 2013-02-17 2015-02-04 淮阴师范学院 Cadmium magnesium oxide alloy transparent conductive thin film and preparation method thereof
KR20160019253A (en) * 2014-08-11 2016-02-19 에스케이하이닉스 주식회사 Electronic device
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
RU2754888C1 (en) * 2021-02-25 2021-09-08 Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук Method for obtaining an optical semiconductor material based on nanodispersed cadmium oxide doped with lithium

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US5166257A (en) 1991-02-19 1992-11-24 Westvaco Corporation Modified rosin esters and their use in printing inks
US5406123A (en) 1992-06-11 1995-04-11 Engineering Research Ctr., North Carolina State Univ. Single crystal titanium nitride epitaxial on silicon
JP3947575B2 (en) 1994-06-10 2007-07-25 Ｈｏｙａ株式会社 Conductive oxide and electrode using the same
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JPH10178202A (en) * 1996-12-18 1998-06-30 Mitsubishi Cable Ind Ltd Manufacture of gan-based substrate
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US6420742B1 (en) * 2000-06-16 2002-07-16 Micron Technology, Inc. Ferroelectric memory transistor with high-k gate insulator and method of fabrication

Also Published As

Publication number Publication date
US6518077B2 (en) 2003-02-11
US6423983B1 (en) 2002-07-23
WO2002031890A3 (en) 2003-03-06
US20020084466A1 (en) 2002-07-04
WO2002031890A2 (en) 2002-04-18

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