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AU2001295618A1 - Method of fabricating heterojunction photodiodes integrated with cmos - Google Patents

Method of fabricating heterojunction photodiodes integrated with cmos

Info

Publication number
AU2001295618A1
AU2001295618A1 AU2001295618A AU9561801A AU2001295618A1 AU 2001295618 A1 AU2001295618 A1 AU 2001295618A1 AU 2001295618 A AU2001295618 A AU 2001295618A AU 9561801 A AU9561801 A AU 9561801A AU 2001295618 A1 AU2001295618 A1 AU 2001295618A1
Authority
AU
Australia
Prior art keywords
cmos
photodiodes
active
well
mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001295618A
Inventor
Carlos J. R. P. Augusto
Lynn Forester
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001295618A1 publication Critical patent/AU2001295618A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Luminescent Compositions (AREA)

Abstract

A method in which thin-film p-i-n heterojunction photodiodes are formed by selective epitaxial growth/deposition on pre-designated active-area regions of standard CMOS devices. The thin-film p-i-n photodiodes are formed on active areas (for example n<SUP>+</SUP>-doped), and these are contacted at the bottom (substrate) side by the "well contact" corresponding to that particular active area. There is no actual potential well since that particular active area has only one type of doping. The top of each photodiode has a separate contact formed thereon. The selective epitaxial growth of the p-i-n photodiodes is modular, in the sense that there is no need to change any of the steps developed for the "pure" CMOS process flow. Since the active region is epitaxially deposited, there is the possibility of forming sharp doping profiles and band-gap engineering during the epitaxial process, thereby optimizing several device parameters for higher performance. This new type of light sensor architecture, monolithically integrated with CMOS, decouples the photo-absorption active region from the MOSFETs, hence the bias applied to the photodiode can be independent from the bias between the source, drain, gate and substrate (well) of the MOSFETs.
AU2001295618A 2000-10-19 2001-10-12 Method of fabricating heterojunction photodiodes integrated with cmos Abandoned AU2001295618A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24155100P 2000-10-19 2000-10-19
US60/241,551 2000-10-19
PCT/EP2001/011817 WO2002033755A2 (en) 2000-10-19 2001-10-12 Method of fabricating heterojunction photodiodes integrated with cmos

Publications (1)

Publication Number Publication Date
AU2001295618A1 true AU2001295618A1 (en) 2002-04-29

Family

ID=22911152

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001295618A Abandoned AU2001295618A1 (en) 2000-10-19 2001-10-12 Method of fabricating heterojunction photodiodes integrated with cmos

Country Status (8)

Country Link
US (1) US6943051B2 (en)
EP (1) EP1328975B1 (en)
JP (1) JP4376516B2 (en)
CN (1) CN100446264C (en)
AT (1) ATE507585T1 (en)
AU (1) AU2001295618A1 (en)
DE (1) DE60144528D1 (en)
WO (1) WO2002033755A2 (en)

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Also Published As

Publication number Publication date
EP1328975B1 (en) 2011-04-27
CN1481585A (en) 2004-03-10
US20040097021A1 (en) 2004-05-20
JP2004512686A (en) 2004-04-22
JP4376516B2 (en) 2009-12-02
ATE507585T1 (en) 2011-05-15
EP1328975A2 (en) 2003-07-23
WO2002033755A3 (en) 2002-09-06
CN100446264C (en) 2008-12-24
WO2002033755A2 (en) 2002-04-25
DE60144528D1 (en) 2011-06-09
US6943051B2 (en) 2005-09-13

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