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AU2001288362A1 - Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges - Google Patents

Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges

Info

Publication number
AU2001288362A1
AU2001288362A1 AU2001288362A AU8836201A AU2001288362A1 AU 2001288362 A1 AU2001288362 A1 AU 2001288362A1 AU 2001288362 A AU2001288362 A AU 2001288362A AU 8836201 A AU8836201 A AU 8836201A AU 2001288362 A1 AU2001288362 A1 AU 2001288362A1
Authority
AU
Australia
Prior art keywords
ion
sychronized
discharges
modulated
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288362A
Inventor
Sivananda K. Kanakasabapathy
Lawrence J. Overzet
Original Assignee
Board Of Regents
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Board Of Regents filed Critical Board Of Regents
Publication of AU2001288362A1 publication Critical patent/AU2001288362A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422Arrangement for selecting ions or species in the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • H01J37/32706Polarising the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
AU2001288362A 2000-08-29 2001-08-23 Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges Abandoned AU2001288362A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22870500P 2000-08-29 2000-08-29
US60228705 2000-08-29
US09/820,244 US6875700B2 (en) 2000-08-29 2001-03-28 Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
US09820244 2001-03-28
PCT/US2001/026344 WO2002019395A1 (en) 2000-08-29 2001-08-23 Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges

Publications (1)

Publication Number Publication Date
AU2001288362A1 true AU2001288362A1 (en) 2002-03-13

Family

ID=26922585

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288362A Abandoned AU2001288362A1 (en) 2000-08-29 2001-08-23 Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges

Country Status (4)

Country Link
US (1) US6875700B2 (en)
AU (1) AU2001288362A1 (en)
TW (1) TW514967B (en)
WO (1) WO2002019395A1 (en)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003166047A (en) * 2001-09-20 2003-06-13 Shin Meiwa Ind Co Ltd Halogen compound film forming method and film forming apparatus, and magnesium fluoride film
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US7078317B2 (en) * 2004-08-06 2006-07-18 Silicon Genesis Corporation Method and system for source switching and in-situ plasma bonding
US9997338B2 (en) * 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US7842135B2 (en) * 2006-01-09 2010-11-30 Aixtron Ag Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire
US20080087539A1 (en) * 2006-10-16 2008-04-17 Walton Scott G Apparatus and Method for Materials Processing with Ion-Ion Plasma
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US7737042B2 (en) * 2007-02-22 2010-06-15 Applied Materials, Inc. Pulsed-plasma system for etching semiconductor structures
US7771606B2 (en) * 2007-02-22 2010-08-10 Applied Materials, Inc. Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US10566169B1 (en) * 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
JP5395491B2 (en) * 2009-03-31 2014-01-22 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
US11978611B2 (en) 2009-05-01 2024-05-07 Advanced Energy Industries, Inc. Apparatus with switches to produce a waveform
US11615941B2 (en) * 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
JP2011211168A (en) * 2010-03-09 2011-10-20 Toshiba Corp Method for manufacturing semiconductor device and semiconductor manufacturing apparatus
US8877654B2 (en) 2010-04-15 2014-11-04 Varian Semiconductor Equipment Associates, Inc. Pulsed plasma to affect conformal processing
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US8692467B2 (en) 2011-07-06 2014-04-08 Lam Research Corporation Synchronized and shortened master-slave RF pulsing in a plasma processing chamber
US9114666B2 (en) * 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
WO2014036000A1 (en) * 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
CN103035470B (en) * 2012-12-14 2016-02-17 中微半导体设备(上海)有限公司 Semiconductor etching apparatus and semiconductor etching method
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
JP2015032779A (en) * 2013-08-06 2015-02-16 株式会社日立ハイテクノロジーズ Plasma processing apparatus
US9269587B2 (en) * 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
US9401263B2 (en) * 2013-09-19 2016-07-26 Globalfoundries Inc. Feature etching using varying supply of power pulses
US9734991B2 (en) * 2015-07-28 2017-08-15 Varian Semiconductor Equipment Associates, Inc. Negative ribbon ion beams from pulsed plasmas
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US11417501B2 (en) * 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
JP6670692B2 (en) 2015-09-29 2020-03-25 株式会社日立ハイテク Plasma processing apparatus and plasma processing method
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
CN111357077B (en) * 2017-11-16 2023-09-08 东京毅力科创株式会社 Plasma processing system using synchronization signal modulation
CN111788655B (en) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 Spatial and temporal control of ion bias voltage for plasma processing
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN112534544B (en) * 2018-08-30 2025-02-11 东京毅力科创株式会社 System and method for controlling plasma processing
US11114306B2 (en) 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material
KR102743927B1 (en) * 2019-01-10 2024-12-17 삼성전자주식회사 Method of controlling uniformity of plasma and plasma processing system
CN111524782B (en) 2019-02-05 2023-07-25 东京毅力科创株式会社 Plasma treatment device
JP7313929B2 (en) 2019-06-26 2023-07-25 住友重機械工業株式会社 Negative ion irradiation device
KR102839318B1 (en) * 2019-10-02 2025-07-29 삼성전자주식회사 plasma etching method and manufacturing method of semiconductor device including the same
US11043387B2 (en) * 2019-10-30 2021-06-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7349910B2 (en) * 2019-12-27 2023-09-25 住友重機械工業株式会社 Negative ion generation device and negative ion generation method
US12131903B2 (en) * 2020-08-06 2024-10-29 Applied Materials, Inc. Pulsed-plasma deposition of thin film layers
US11545364B2 (en) * 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
JP2023150981A (en) * 2022-03-31 2023-10-16 住友重機械工業株式会社 Negative ion generator
US20230343554A1 (en) * 2022-04-20 2023-10-26 Tokyo Electron Limited Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A Radio Frequency Modulated Pulsed Plasma Scheme
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
JP2024160481A (en) 2023-05-01 2024-11-14 日新電機株式会社 PLASMA PROCESSING APPARATUS AND METHOD FOR CONTROLLING PLASMA PROCESSING APPARATUS

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747922A (en) * 1986-03-25 1988-05-31 The United States Of America As Represented By The United States Department Of Energy Confined ion beam sputtering device and method
US4963239A (en) * 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
EP0574100B1 (en) * 1992-04-16 1999-05-12 Mitsubishi Jukogyo Kabushiki Kaisha Plasma CVD method and apparatus therefor
JP2941572B2 (en) * 1992-08-11 1999-08-25 三菱電機株式会社 Plasma etching apparatus and method for manufacturing semiconductor device
US5580429A (en) * 1992-08-25 1996-12-03 Northeastern University Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation
US5330800A (en) * 1992-11-04 1994-07-19 Hughes Aircraft Company High impedance plasma ion implantation method and apparatus
US5510011A (en) * 1992-11-09 1996-04-23 Canon Kabushiki Kaisha Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
US5619103A (en) * 1993-11-02 1997-04-08 Wisconsin Alumni Research Foundation Inductively coupled plasma generating devices
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
US5580419A (en) * 1994-03-23 1996-12-03 Trw Inc. Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
US5430328A (en) * 1994-05-31 1995-07-04 United Microelectronics Corporation Process for self-align contact
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
JP2845163B2 (en) * 1994-10-27 1999-01-13 日本電気株式会社 Plasma processing method and apparatus
JP3483327B2 (en) * 1994-11-29 2004-01-06 アネルバ株式会社 Plasma processing method
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5728261A (en) * 1995-05-26 1998-03-17 University Of Houston Magnetically enhanced radio frequency reactive ion etching method and apparatus
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5783102A (en) * 1996-02-05 1998-07-21 International Business Machines Corporation Negative ion deductive source for etching high aspect ratio structures
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
CA2205817C (en) * 1996-05-24 2004-04-06 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
US5868897A (en) * 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
DE19929278A1 (en) * 1998-06-26 2000-02-17 Nissin Electric Co Ltd Negative hydrogen ion beam injection method on substrate
US6362109B1 (en) * 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist

Also Published As

Publication number Publication date
WO2002019395A1 (en) 2002-03-07
US6875700B2 (en) 2005-04-05
US20020139658A1 (en) 2002-10-03
TW514967B (en) 2002-12-21

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