AU2001288362A1 - Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges - Google Patents
Ion-ion plasma processing with bias modulation sychronized to time-modulated dischargesInfo
- Publication number
- AU2001288362A1 AU2001288362A1 AU2001288362A AU8836201A AU2001288362A1 AU 2001288362 A1 AU2001288362 A1 AU 2001288362A1 AU 2001288362 A AU2001288362 A AU 2001288362A AU 8836201 A AU8836201 A AU 8836201A AU 2001288362 A1 AU2001288362 A1 AU 2001288362A1
- Authority
- AU
- Australia
- Prior art keywords
- ion
- sychronized
- discharges
- modulated
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22870500P | 2000-08-29 | 2000-08-29 | |
| US60228705 | 2000-08-29 | ||
| US09/820,244 US6875700B2 (en) | 2000-08-29 | 2001-03-28 | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
| US09820244 | 2001-03-28 | ||
| PCT/US2001/026344 WO2002019395A1 (en) | 2000-08-29 | 2001-08-23 | Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001288362A1 true AU2001288362A1 (en) | 2002-03-13 |
Family
ID=26922585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001288362A Abandoned AU2001288362A1 (en) | 2000-08-29 | 2001-08-23 | Ion-ion plasma processing with bias modulation sychronized to time-modulated discharges |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6875700B2 (en) |
| AU (1) | AU2001288362A1 (en) |
| TW (1) | TW514967B (en) |
| WO (1) | WO2002019395A1 (en) |
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| JP2003166047A (en) * | 2001-09-20 | 2003-06-13 | Shin Meiwa Ind Co Ltd | Halogen compound film forming method and film forming apparatus, and magnesium fluoride film |
| USH2212H1 (en) * | 2003-09-26 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for producing an ion-ion plasma continuous in time |
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| US7078317B2 (en) * | 2004-08-06 | 2006-07-18 | Silicon Genesis Corporation | Method and system for source switching and in-situ plasma bonding |
| US9997338B2 (en) * | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| US7842135B2 (en) * | 2006-01-09 | 2010-11-30 | Aixtron Ag | Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire |
| US20080087539A1 (en) * | 2006-10-16 | 2008-04-17 | Walton Scott G | Apparatus and Method for Materials Processing with Ion-Ion Plasma |
| US8381677B2 (en) * | 2006-12-20 | 2013-02-26 | Applied Materials, Inc. | Prevention of film deposition on PECVD process chamber wall |
| US7737042B2 (en) * | 2007-02-22 | 2010-06-15 | Applied Materials, Inc. | Pulsed-plasma system for etching semiconductor structures |
| US7771606B2 (en) * | 2007-02-22 | 2010-08-10 | Applied Materials, Inc. | Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures |
| US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
| US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
| US10566169B1 (en) * | 2008-06-30 | 2020-02-18 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
| JP5395491B2 (en) * | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| US11978611B2 (en) | 2009-05-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Apparatus with switches to produce a waveform |
| US11615941B2 (en) * | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| JP2011211168A (en) * | 2010-03-09 | 2011-10-20 | Toshiba Corp | Method for manufacturing semiconductor device and semiconductor manufacturing apparatus |
| US8877654B2 (en) | 2010-04-15 | 2014-11-04 | Varian Semiconductor Equipment Associates, Inc. | Pulsed plasma to affect conformal processing |
| US9117767B2 (en) * | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
| US8692467B2 (en) | 2011-07-06 | 2014-04-08 | Lam Research Corporation | Synchronized and shortened master-slave RF pulsing in a plasma processing chamber |
| US9114666B2 (en) * | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| WO2014036000A1 (en) * | 2012-08-28 | 2014-03-06 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
| CN103035470B (en) * | 2012-12-14 | 2016-02-17 | 中微半导体设备(上海)有限公司 | Semiconductor etching apparatus and semiconductor etching method |
| US9783884B2 (en) * | 2013-03-14 | 2017-10-10 | Varian Semiconductor Equipment Associates, Inc. | Method for implementing low dose implant in a plasma system |
| JP2015032779A (en) * | 2013-08-06 | 2015-02-16 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus |
| US9269587B2 (en) * | 2013-09-06 | 2016-02-23 | Applied Materials, Inc. | Methods for etching materials using synchronized RF pulses |
| US9401263B2 (en) * | 2013-09-19 | 2016-07-26 | Globalfoundries Inc. | Feature etching using varying supply of power pulses |
| US9734991B2 (en) * | 2015-07-28 | 2017-08-15 | Varian Semiconductor Equipment Associates, Inc. | Negative ribbon ion beams from pulsed plasmas |
| US9761459B2 (en) * | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
| US11417501B2 (en) * | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| JP6670692B2 (en) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | Plasma processing apparatus and plasma processing method |
| US10340123B2 (en) * | 2016-05-26 | 2019-07-02 | Tokyo Electron Limited | Multi-frequency power modulation for etching high aspect ratio features |
| US10312048B2 (en) * | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| US11694911B2 (en) | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
| CN111357077B (en) * | 2017-11-16 | 2023-09-08 | 东京毅力科创株式会社 | Plasma processing system using synchronization signal modulation |
| CN111788655B (en) | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | Spatial and temporal control of ion bias voltage for plasma processing |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| CN112534544B (en) * | 2018-08-30 | 2025-02-11 | 东京毅力科创株式会社 | System and method for controlling plasma processing |
| US11114306B2 (en) | 2018-09-17 | 2021-09-07 | Applied Materials, Inc. | Methods for depositing dielectric material |
| KR102743927B1 (en) * | 2019-01-10 | 2024-12-17 | 삼성전자주식회사 | Method of controlling uniformity of plasma and plasma processing system |
| CN111524782B (en) | 2019-02-05 | 2023-07-25 | 东京毅力科创株式会社 | Plasma treatment device |
| JP7313929B2 (en) | 2019-06-26 | 2023-07-25 | 住友重機械工業株式会社 | Negative ion irradiation device |
| KR102839318B1 (en) * | 2019-10-02 | 2025-07-29 | 삼성전자주식회사 | plasma etching method and manufacturing method of semiconductor device including the same |
| US11043387B2 (en) * | 2019-10-30 | 2021-06-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| JP7349910B2 (en) * | 2019-12-27 | 2023-09-25 | 住友重機械工業株式会社 | Negative ion generation device and negative ion generation method |
| US12131903B2 (en) * | 2020-08-06 | 2024-10-29 | Applied Materials, Inc. | Pulsed-plasma deposition of thin film layers |
| US11545364B2 (en) * | 2020-08-24 | 2023-01-03 | Tokyo Electron Limited | Pulsed capacitively coupled plasma processes |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| JP2023150981A (en) * | 2022-03-31 | 2023-10-16 | 住友重機械工業株式会社 | Negative ion generator |
| US20230343554A1 (en) * | 2022-04-20 | 2023-10-26 | Tokyo Electron Limited | Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A Radio Frequency Modulated Pulsed Plasma Scheme |
| US12493005B1 (en) | 2022-06-07 | 2025-12-09 | Nexgen Semi Holding, Inc. | Extended range active illumination imager |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| JP2024160481A (en) | 2023-05-01 | 2024-11-14 | 日新電機株式会社 | PLASMA PROCESSING APPARATUS AND METHOD FOR CONTROLLING PLASMA PROCESSING APPARATUS |
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| US4747922A (en) * | 1986-03-25 | 1988-05-31 | The United States Of America As Represented By The United States Department Of Energy | Confined ion beam sputtering device and method |
| US4963239A (en) * | 1988-01-29 | 1990-10-16 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
| US5022958A (en) * | 1990-06-27 | 1991-06-11 | At&T Bell Laboratories | Method of etching for integrated circuits with planarized dielectric |
| US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
| US5279669A (en) * | 1991-12-13 | 1994-01-18 | International Business Machines Corporation | Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions |
| EP0574100B1 (en) * | 1992-04-16 | 1999-05-12 | Mitsubishi Jukogyo Kabushiki Kaisha | Plasma CVD method and apparatus therefor |
| JP2941572B2 (en) * | 1992-08-11 | 1999-08-25 | 三菱電機株式会社 | Plasma etching apparatus and method for manufacturing semiconductor device |
| US5580429A (en) * | 1992-08-25 | 1996-12-03 | Northeastern University | Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation |
| US5330800A (en) * | 1992-11-04 | 1994-07-19 | Hughes Aircraft Company | High impedance plasma ion implantation method and apparatus |
| US5510011A (en) * | 1992-11-09 | 1996-04-23 | Canon Kabushiki Kaisha | Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature |
| US5744011A (en) * | 1993-03-18 | 1998-04-28 | Kabushiki Kaisha Toshiba | Sputtering apparatus and sputtering method |
| US5619103A (en) * | 1993-11-02 | 1997-04-08 | Wisconsin Alumni Research Foundation | Inductively coupled plasma generating devices |
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| US5554853A (en) * | 1995-03-10 | 1996-09-10 | Krytek Corporation | Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques |
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| US6028285A (en) * | 1997-11-19 | 2000-02-22 | Board Of Regents, The University Of Texas System | High density plasma source for semiconductor processing |
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-
2001
- 2001-03-28 US US09/820,244 patent/US6875700B2/en not_active Expired - Fee Related
- 2001-08-21 TW TW090120541A patent/TW514967B/en not_active IP Right Cessation
- 2001-08-23 AU AU2001288362A patent/AU2001288362A1/en not_active Abandoned
- 2001-08-23 WO PCT/US2001/026344 patent/WO2002019395A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002019395A1 (en) | 2002-03-07 |
| US6875700B2 (en) | 2005-04-05 |
| US20020139658A1 (en) | 2002-10-03 |
| TW514967B (en) | 2002-12-21 |
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