AU2001288026A1 - A multisegment integrated laser and a method for fabrication thereof - Google Patents
A multisegment integrated laser and a method for fabrication thereofInfo
- Publication number
- AU2001288026A1 AU2001288026A1 AU2001288026A AU8802601A AU2001288026A1 AU 2001288026 A1 AU2001288026 A1 AU 2001288026A1 AU 2001288026 A AU2001288026 A AU 2001288026A AU 8802601 A AU8802601 A AU 8802601A AU 2001288026 A1 AU2001288026 A1 AU 2001288026A1
- Authority
- AU
- Australia
- Prior art keywords
- segments
- waveguide
- layer
- waveguide segments
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 2
- 238000005516 engineering process Methods 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Laser Surgery Devices (AREA)
- Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23045700P | 2000-09-06 | 2000-09-06 | |
| US60230457 | 2000-09-06 | ||
| PCT/IL2001/000840 WO2002021650A2 (fr) | 2000-09-06 | 2001-09-06 | Laser integre a segments multiples et procede de fabrication dudit laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001288026A1 true AU2001288026A1 (en) | 2002-03-22 |
Family
ID=22865294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001288026A Abandoned AU2001288026A1 (en) | 2000-09-06 | 2001-09-06 | A multisegment integrated laser and a method for fabrication thereof |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6885689B2 (fr) |
| EP (1) | EP1316129B1 (fr) |
| AT (1) | ATE284084T1 (fr) |
| AU (1) | AU2001288026A1 (fr) |
| CA (1) | CA2421657A1 (fr) |
| DE (1) | DE60107581T2 (fr) |
| IL (1) | IL154662A0 (fr) |
| WO (1) | WO2002021650A2 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1101484B1 (fr) | 1999-11-17 | 2007-01-10 | Kabushiki Kaisha Shofu | Matériau d' obturation dentaire |
| US20040037341A1 (en) * | 2002-08-21 | 2004-02-26 | Tan Michael R. | Laser utilizing a microdisk resonator |
| IL152195A0 (en) | 2002-10-09 | 2003-05-29 | Lambda Crossing Ltd | Tunable laser |
| CN101103307B (zh) * | 2004-12-01 | 2010-09-29 | 宾奥普迪克斯股份有限公司 | 波长转换器/反相器 |
| US8737446B2 (en) * | 2010-03-25 | 2014-05-27 | Sumitomo Electric Industries, Ltd. | Semiconductor laser |
| EP2645496A1 (fr) * | 2012-03-26 | 2013-10-02 | Alcatel Lucent | Laser à semi-conducteurs accordable en longueurs d'onde |
| US9354394B2 (en) * | 2012-05-11 | 2016-05-31 | Oracle International Corporation | Optical components having a common etch depth |
| US9158069B2 (en) * | 2013-04-15 | 2015-10-13 | Technion Research & Development Foundation Ltd. | Charge-discharge electro-optical microring modulator |
| WO2018207422A1 (fr) * | 2017-05-08 | 2018-11-15 | ソニー株式会社 | Corps assemblé de dispositif laser |
| CN108683078B (zh) * | 2018-06-21 | 2023-06-09 | 中国科学院福建物质结构研究所 | 一种波长可调谐的半导体激光器 |
| EP4026207A1 (fr) * | 2019-09-02 | 2022-07-13 | SMART Photonics Holding B.V. | Laser en anneau accordable de façon électro-optique inp intégré de manière monolithique, dispositif laser ainsi qu'un procédé correspondant |
| CN112490850B (zh) * | 2020-12-09 | 2023-04-07 | 海南师范大学 | 蓝光隧道结纳米环光放大器外延结构及放大器的制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4622671A (en) | 1983-02-25 | 1986-11-11 | At&T Bell Laboratories | Multicavity optical device |
| JPS62287683A (ja) * | 1986-06-06 | 1987-12-14 | Nec Corp | 光分岐半導体レ−ザ |
| JP2667255B2 (ja) * | 1989-07-24 | 1997-10-27 | 日立電線株式会社 | 希土類元素添加ガラス導波路増幅器 |
| IL96186A (en) | 1989-11-20 | 1994-08-26 | Hughes Aircraft Co | Master oscillator power amplifier with interference isolated oscillator |
| US5327448A (en) | 1992-03-30 | 1994-07-05 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and techniques for controlled optical confinement |
| US5398256A (en) | 1993-05-10 | 1995-03-14 | The United States Of America As Represented By The United States Department Of Energy | Interferometric ring lasers and optical devices |
| US5548607A (en) | 1994-06-08 | 1996-08-20 | Lucent Technologies, Inc. | Article comprising an integrated laser/modulator combination |
| US5742633A (en) | 1996-10-02 | 1998-04-21 | Yale University | Asymmetric resonant optical cavity apparatus |
| WO2001027692A1 (fr) | 1999-10-14 | 2001-04-19 | Lambda Crossing Ltd. | Dispositif optique integre pour communication de donnees |
-
2001
- 2001-09-05 US US09/946,138 patent/US6885689B2/en not_active Expired - Fee Related
- 2001-09-06 CA CA002421657A patent/CA2421657A1/fr not_active Abandoned
- 2001-09-06 DE DE60107581T patent/DE60107581T2/de not_active Expired - Fee Related
- 2001-09-06 EP EP01967658A patent/EP1316129B1/fr not_active Expired - Lifetime
- 2001-09-06 AT AT01967658T patent/ATE284084T1/de not_active IP Right Cessation
- 2001-09-06 AU AU2001288026A patent/AU2001288026A1/en not_active Abandoned
- 2001-09-06 WO PCT/IL2001/000840 patent/WO2002021650A2/fr not_active Ceased
- 2001-09-06 IL IL15466201A patent/IL154662A0/xx active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CA2421657A1 (fr) | 2002-03-14 |
| US20020037023A1 (en) | 2002-03-28 |
| DE60107581T2 (de) | 2005-10-06 |
| EP1316129B1 (fr) | 2004-12-01 |
| ATE284084T1 (de) | 2004-12-15 |
| WO2002021650A2 (fr) | 2002-03-14 |
| DE60107581D1 (de) | 2005-01-05 |
| EP1316129A2 (fr) | 2003-06-04 |
| IL154662A0 (en) | 2003-09-17 |
| WO2002021650A3 (fr) | 2002-08-15 |
| US6885689B2 (en) | 2005-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1368870B1 (fr) | Laser module par electroabsorption a guide d'ondes asymetrique | |
| US5398256A (en) | Interferometric ring lasers and optical devices | |
| US20020028390A1 (en) | Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures | |
| JPH077231A (ja) | 非対称yブランチ光デバイス | |
| US6594298B2 (en) | Multi-wavelength semiconductor laser array and method for fabricating the same | |
| US6885689B2 (en) | Multisegment integrated laser and a method for fabrication thereof | |
| JP2018006440A (ja) | 半導体レーザ | |
| JP6588859B2 (ja) | 半導体レーザ | |
| KR100582114B1 (ko) | 반도체 디바이스 제작 방법 및 반도체 광 디바이스 | |
| EP1218988A4 (fr) | Convertisseur optique de longueur d'onde integre simple et a deux etapes accordable en longueur d'onde | |
| Rabus et al. | Ring resonator lasers using passive waveguides and integrated semiconductor optical amplifiers | |
| US12027818B2 (en) | Semiconductor laser | |
| Bach et al. | Wavelength stabilized single-mode lasers by coupled micro-square resonators | |
| JPH0992933A (ja) | 波長可変半導体レーザ | |
| KR100626270B1 (ko) | 광 대역 파장 가변 결합 링 반사기 레이저 다이오드 | |
| US7273565B2 (en) | Method for manufacturing a photonic device and a photonic device | |
| JP2004296560A (ja) | 半導体レーザの製造方法および集積光回路の製造方法 | |
| US7310363B1 (en) | Integrated wavelength tunable single and two-stage all-optical wavelength converter | |
| IL154662A (en) | Multisegment integrated laser and method for fabrication thereof | |
| JP2004063972A (ja) | 半導体レーザおよびその製造方法 | |
| JPS6195592A (ja) | 集積分布ブラツグ反射型半導体レ−ザ | |
| US20250125581A1 (en) | Heterogeneously integrated dfb laser with single lateral mode | |
| Duan et al. | III–V on silicon transmitters | |
| Harmsma et al. | Multi wavelength lasers fabricated using selective area chemical beam epitaxy | |
| JP2006047895A (ja) | フォトニック結晶半導体デバイス及び半導体レーザ集積デバイス |