Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/127—Structure or manufacture of heads, e.g. inductive
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/127—Structure or manufacture of heads, e.g. inductive
  • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
  • G11B5/245—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features comprising means for controlling the reluctance of the magnetic circuit in a head with single gap, for co-operation with one track
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
  • G11B5/49—Fixed mounting or arrangements, e.g. one head per track
  • G11B5/4907—Details for scanning
  • G11B5/4915—Structure of specially adapted heads
  • G11B5/4923—Structure of specially adapted heads in which zones of the transducing part are being physically controllable
  • G11B5/493—Control of magnetic properties, e.g. saturation, anisotropy
  • G11B5/4938—Control of magnetic properties, e.g. saturation, anisotropy of thin magnetic films
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
  • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
  • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
  • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F10/00—Thin magnetic films, e.g. of one-domain structure
  • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
  • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F10/00—Thin magnetic films, e.g. of one-domain structure
  • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
  • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
  • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
  • H01F10/00—Thin magnetic films, e.g. of one-domain structure
  • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
  • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
  • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B2005/0002—Special dispositions or recording techniques
  • G11B2005/0005—Arrangements, methods or circuits
  • G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
  • G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation

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• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Crystallography & Structural Chemistry (AREA)
• Nanotechnology (AREA)
• Power Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Mathematical Physics (AREA)
• Theoretical Computer Science (AREA)
• Semiconductor Memories (AREA)
• Hall/Mr Elements (AREA)

Applications Claiming Priority (3)

Publications (1)

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Family Applications (1)

Country Status (5)

Families Citing this family (17)

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• 2001
  • 2001-09-26 AU AU2001287985A patent/AU2001287985A1/en not_active Abandoned
  • 2001-09-26 DE DE60113136T patent/DE60113136T2/en not_active Expired - Lifetime
  • 2001-09-26 WO PCT/IB2001/001756 patent/WO2002033713A1/en not_active Ceased
  • 2001-09-26 EP EP01967615A patent/EP1327251B1/en not_active Expired - Lifetime
  • 2001-10-05 US US09/972,286 patent/US6621732B2/en not_active Expired - Lifetime

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