[go: up one dir, main page]

AU2001281291A1 - Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages - Google Patents

Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages

Info

Publication number
AU2001281291A1
AU2001281291A1 AU2001281291A AU8129101A AU2001281291A1 AU 2001281291 A1 AU2001281291 A1 AU 2001281291A1 AU 2001281291 A AU2001281291 A AU 2001281291A AU 8129101 A AU8129101 A AU 8129101A AU 2001281291 A1 AU2001281291 A1 AU 2001281291A1
Authority
AU
Australia
Prior art keywords
fast
accurate determination
diffusion length
minority carrier
measured surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281291A
Inventor
Andrei Aleinikov
Vladimir Faifer
Jacek Lagowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Diagnostics Inc
Original Assignee
Semiconductor Diagnostics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/672,351 external-priority patent/US6512384B1/en
Application filed by Semiconductor Diagnostics Inc filed Critical Semiconductor Diagnostics Inc
Publication of AU2001281291A1 publication Critical patent/AU2001281291A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU2001281291A 2000-06-29 2001-06-29 Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages Abandoned AU2001281291A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21498500P 2000-06-29 2000-06-29
US60214985 2000-06-29
US09672351 2000-09-28
US09/672,351 US6512384B1 (en) 2000-06-29 2000-09-28 Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages
PCT/US2001/041218 WO2002003053A1 (en) 2000-06-29 2001-06-29 Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages

Publications (1)

Publication Number Publication Date
AU2001281291A1 true AU2001281291A1 (en) 2002-01-14

Family

ID=26909573

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281291A Abandoned AU2001281291A1 (en) 2000-06-29 2001-06-29 Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages

Country Status (5)

Country Link
EP (1) EP1311825B1 (en)
JP (1) JP2004503100A (en)
AU (1) AU2001281291A1 (en)
DE (1) DE60123971T2 (en)
TW (1) TWI230262B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187186B2 (en) * 2004-03-22 2007-03-06 Kla-Tencor Technologies Corp. Methods and systems for determining one or more properties of a specimen
US7659734B2 (en) * 2007-03-07 2010-02-09 Qcept Technologies, Inc. Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination
TWI559424B (en) * 2015-03-05 2016-11-21 力晶科技股份有限公司 Method for real-time monitoring metal pollution of semiconductor wafer
US10871515B2 (en) 2015-10-07 2020-12-22 Sumco Corporation Method of measuring Fe concentration in p-type silicon wafer
US11150140B2 (en) * 2016-02-02 2021-10-19 Kla Corporation Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
DE102016005478B3 (en) * 2016-05-03 2016-12-29 Lpcon Gmbh Method and device for measuring the lifetime of charge carriers in semiconductors
CN106772131A (en) * 2016-12-30 2017-05-31 北京煜邦电力技术股份有限公司 A kind of indicator lamp detection means

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243551A (en) * 1985-08-21 1987-02-25 Hitachi Ltd Apparatus for measuring life of minority carrier of semiconductor
US5025145A (en) * 1988-08-23 1991-06-18 Lagowski Jacek J Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
JPH05226445A (en) * 1992-02-18 1993-09-03 Hitachi Ltd Non-contact carrier diffusion length measuring device
US5471293A (en) * 1994-02-02 1995-11-28 Advanced Micro Devices Method and device for determining defects within a crystallographic substrate
US5663657A (en) * 1994-09-26 1997-09-02 University Of South Florida Determining long minority carrier diffusion lengths
DE19511869B4 (en) * 1995-03-31 2004-02-26 Geiler, Hans-Dieter, Dr. Method and arrangement for response analysis of semiconductor materials with optical excitation
US5581194A (en) * 1995-06-07 1996-12-03 Advanced Micro Devices, Inc. Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage
US5804981A (en) * 1996-05-07 1998-09-08 Advanced Micro Devices, Inc. Method of detecting heavy metal impurities introduced into a silicon wafer during ion implantation
JPH10253528A (en) * 1997-03-07 1998-09-25 Seibutsukei Tokutei Sangyo Gijutsu Kenkyu Suishin Kiko Method and apparatus for measuring spectral reflectance of plant
EP0869352A1 (en) * 1997-04-03 1998-10-07 Applied Materials, Inc. Method for detecting metallic contaminants in submicron silicon surface layers of a semiconductor wafer
US5977788A (en) * 1997-07-11 1999-11-02 Lagowski; Jacek Elevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor wafer

Also Published As

Publication number Publication date
DE60123971T2 (en) 2007-03-08
JP2004503100A (en) 2004-01-29
DE60123971D1 (en) 2006-11-30
TWI230262B (en) 2005-04-01
EP1311825B1 (en) 2006-10-18
EP1311825A4 (en) 2005-08-17
EP1311825A1 (en) 2003-05-21

Similar Documents

Publication Publication Date Title
HK1043471A1 (en) Apparatus for measuring relative hydration of a substrate
DE19983188T1 (en) Silicon semiconductor substrate and method for its production
AU2002353481A1 (en) Method and apparatus for measuring stress in semiconductor wafers
AU4432899A (en) Semiconductor wafer evaluating apparatus and method
AU2002354254A1 (en) Method for making nitride semiconductor substrate and method for making nitride semiconductor device
SG97825A1 (en) Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus
GB2381583B (en) Measuring and levelling device and method of using same
EP1045438B8 (en) Probe card for testing semiconductor device, and semiconductor device test method
AU2001267703A1 (en) Apparatus and method for investigating semiconductor wafers
AU5799498A (en) Method and apparatus for metallizing high aspect ratio silicon semiconductor device contacts
AU2001289124A1 (en) A testing device for semiconductor components and a method of using the device
IL151698A0 (en) Iii-v nitride substrate boule and method of making and using the same
EP1130626A3 (en) Method and apparatus for manufacturing semiconductor device
AU2002238409A1 (en) Method and device for determining the properties of an integrated circuit
SG98376A1 (en) Tape carrier and manufacturing method of tape carrier type semiconductor device
GB2360043B (en) Method and apparatus for loading substrate in semiconductor manufacturing apparatus
AU6613000A (en) Apparatus and method for texture analysis on semiconductor wafers
AU2001294188A1 (en) Device and method for manufacturing semiconductor
SG90228A1 (en) Semiconductor device adhesive layer structure and process for forming structure
EP1170404A4 (en) Silicon wafer and production method thereof and evaluation method for silicon wafer
AU2002250528A1 (en) Semiconductor test system and associated methods for wafer level acceptance testing
AU6779498A (en) Probe tile and platform for large area wafer probing
AU7378900A (en) Wafer coating method for flip chips
AU5594200A (en) Microsystems integrated testing and characterization system and method
AU2001281291A1 (en) Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages