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AU2001280467A1 - Cmos sram cell with prescribed power-on data state - Google Patents

Cmos sram cell with prescribed power-on data state

Info

Publication number
AU2001280467A1
AU2001280467A1 AU2001280467A AU8046701A AU2001280467A1 AU 2001280467 A1 AU2001280467 A1 AU 2001280467A1 AU 2001280467 A AU2001280467 A AU 2001280467A AU 8046701 A AU8046701 A AU 8046701A AU 2001280467 A1 AU2001280467 A1 AU 2001280467A1
Authority
AU
Australia
Prior art keywords
sram cell
data state
cmos sram
prescribed power
prescribed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280467A
Inventor
Leonard R. Rockett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE SYSTEMS
Original Assignee
BAE SYSTEMS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BAE SYSTEMS filed Critical BAE SYSTEMS
Publication of AU2001280467A1 publication Critical patent/AU2001280467A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2001280467A 2000-07-25 2001-07-25 Cmos sram cell with prescribed power-on data state Abandoned AU2001280467A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22070000P 2000-07-25 2000-07-25
US60220700 2000-07-25
PCT/US2001/021116 WO2002009115A1 (en) 2000-07-25 2001-07-25 Cmos sram cell with prescribed power-on data state

Publications (1)

Publication Number Publication Date
AU2001280467A1 true AU2001280467A1 (en) 2002-02-05

Family

ID=22824590

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2001280468A Abandoned AU2001280468A1 (en) 2000-07-25 2001-07-25 High-performance high-density cmos sram cell
AU2001280467A Abandoned AU2001280467A1 (en) 2000-07-25 2001-07-25 Cmos sram cell with prescribed power-on data state

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU2001280468A Abandoned AU2001280468A1 (en) 2000-07-25 2001-07-25 High-performance high-density cmos sram cell

Country Status (2)

Country Link
AU (2) AU2001280468A1 (en)
WO (2) WO2002009116A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2356132C2 (en) 2004-06-10 2009-05-20 Текникал Юниверсити Оф Денмарк Solid oxide fuel cell
JP5639737B2 (en) 2004-12-28 2014-12-10 テクニカル ユニバーシティ オブ デンマーク A method of producing a metal-to-metal, metal-to-metal or ceramic-to-ceramic connection.
DE602006013786D1 (en) 2005-02-02 2010-06-02 Univ Denmark Tech Dtu METHOD FOR PRODUCING A REVERSIBLE SOLID OXYGEN FUEL CELL
DK1760817T3 (en) 2005-08-31 2013-10-14 Univ Denmark Tech Dtu Reversible solid oxide fuel cell stack and process for making same
EP1932476A4 (en) 2005-09-05 2010-06-23 Hitachi Medical Corp Ultrasonographic device
US8476709B2 (en) 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US5350933A (en) * 1990-02-21 1994-09-27 Sony Corporation Semiconductor CMOS static RAM with overlapping thin film transistors
JP2684980B2 (en) * 1993-12-24 1997-12-03 日本電気株式会社 Semiconductor memory device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2002009116A1 (en) 2002-01-31
AU2001280468A1 (en) 2002-02-05
WO2002009115A1 (en) 2002-01-31

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