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AU2001280324A1 - Method for producing an injection laser - Google Patents

Method for producing an injection laser

Info

Publication number
AU2001280324A1
AU2001280324A1 AU2001280324A AU8032401A AU2001280324A1 AU 2001280324 A1 AU2001280324 A1 AU 2001280324A1 AU 2001280324 A AU2001280324 A AU 2001280324A AU 8032401 A AU8032401 A AU 8032401A AU 2001280324 A1 AU2001280324 A1 AU 2001280324A1
Authority
AU
Australia
Prior art keywords
producing
injection laser
laser
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280324A
Inventor
Aleksandr Viktorovich Aluev
Aleksander Aleksandrovich Chelnyy
Marina Shalvovna Kobiakova
Aleksandr Mikhailovich Morozyuk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno -Issledovatelsky Institut "polyus"
Original Assignee
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod filed Critical Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Publication of AU2001280324A1 publication Critical patent/AU2001280324A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
AU2001280324A 2000-08-30 2001-07-16 Method for producing an injection laser Abandoned AU2001280324A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU2000122626A RU2176841C1 (en) 2000-08-30 2000-08-30 Injection laser manufacturing process
RU2000122626 2000-08-30
PCT/RU2001/000292 WO2002019480A2 (en) 2000-08-30 2001-07-16 Method for producing an injection laser

Publications (1)

Publication Number Publication Date
AU2001280324A1 true AU2001280324A1 (en) 2002-03-13

Family

ID=20239623

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280324A Abandoned AU2001280324A1 (en) 2000-08-30 2001-07-16 Method for producing an injection laser

Country Status (3)

Country Link
AU (1) AU2001280324A1 (en)
RU (1) RU2176841C1 (en)
WO (1) WO2002019480A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2205468C1 (en) * 2002-07-09 2003-05-27 Физико-технический институт им. А.Ф.Иоффе РАН Method for manufacturing light-emitting structure around quantum points and light- emitting structure
RU2257640C1 (en) * 2004-04-28 2005-07-27 Физико-технический институт им. А.Ф. Иоффе РАН Light-emitting structure and method for manufacturing light- emitting structure
RU2362243C1 (en) * 2007-10-11 2009-07-20 Павел Константинович Кашкаров Method of forming solid-state silicon nanostructure for optical-pumping laser and optical amplifier based thereon
RU2364985C1 (en) * 2008-02-08 2009-08-20 Государственное Научное Учреждение "Институт Физики Имени Б.И. Степанова Национальной Академии Наук Беларуси" Reception method of contact interconnections of diode lasers and strips

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465337A1 (en) * 1979-09-11 1981-03-20 Landreau Jean METHOD FOR MANUFACTURING AN OPTICAL AND ELECTRICAL CROSS-CONTAINING SEMICONDUCTOR LASER AND LASER OBTAINED THEREBY
JPS5681994A (en) * 1979-12-07 1981-07-04 Seiji Yasu Field effect type semiconductor laser and manufacture thereof
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
SU1831213A1 (en) * 1990-08-22 1996-09-27 НИИ "Полюс" Injection laser manufacturing process
GB2258753B (en) * 1991-08-15 1995-02-15 Northern Telecom Ltd Injection laser modulation
RU2069926C1 (en) * 1992-05-15 1996-11-27 Тригуб Виктор Иванович Laser
JP3481458B2 (en) * 1998-05-14 2003-12-22 アンリツ株式会社 Semiconductor laser

Also Published As

Publication number Publication date
RU2176841C1 (en) 2001-12-10
WO2002019480A2 (en) 2002-03-07
WO2002019480A3 (en) 2003-02-13

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