AU2001279136A1 - Near critical and supercritical ozone substrate treatment and apparatus for same - Google Patents
Near critical and supercritical ozone substrate treatment and apparatus for sameInfo
- Publication number
- AU2001279136A1 AU2001279136A1 AU2001279136A AU7913601A AU2001279136A1 AU 2001279136 A1 AU2001279136 A1 AU 2001279136A1 AU 2001279136 A AU2001279136 A AU 2001279136A AU 7913601 A AU7913601 A AU 7913601A AU 2001279136 A1 AU2001279136 A1 AU 2001279136A1
- Authority
- AU
- Australia
- Prior art keywords
- same
- substrate treatment
- near critical
- supercritical ozone
- ozone substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00841—Cleaning during or after manufacture
- B81C1/00849—Cleaning during or after manufacture during manufacture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Processing Of Solid Wastes (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22195600P | 2000-07-31 | 2000-07-31 | |
| US60221956 | 2000-07-31 | ||
| PCT/US2001/024185 WO2002011191A2 (en) | 2000-07-31 | 2001-07-31 | Near critical and supercritical ozone substrate treatment and apparatus for same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001279136A1 true AU2001279136A1 (en) | 2002-02-13 |
Family
ID=22830142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001279136A Abandoned AU2001279136A1 (en) | 2000-07-31 | 2001-07-31 | Near critical and supercritical ozone substrate treatment and apparatus for same |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2001279136A1 (en) |
| WO (1) | WO2002011191A2 (en) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL152376A0 (en) | 2000-04-25 | 2003-05-29 | Tokyo Electron Ltd | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| WO2002009147A2 (en) | 2000-07-26 | 2002-01-31 | Tokyo Electron Limited | High pressure processing chamber for semiconductor substrate |
| US6924086B1 (en) | 2002-02-15 | 2005-08-02 | Tokyo Electron Limited | Developing photoresist with supercritical fluid and developer |
| US6928746B2 (en) | 2002-02-15 | 2005-08-16 | Tokyo Electron Limited | Drying resist with a solvent bath and supercritical CO2 |
| AU2003220039A1 (en) | 2002-03-04 | 2003-09-22 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| US7169540B2 (en) | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
| US7267727B2 (en) | 2002-09-24 | 2007-09-11 | Air Products And Chemicals, Inc. | Processing of semiconductor components with dense processing fluids and ultrasonic energy |
| DE102004029077B4 (en) * | 2003-06-26 | 2010-07-22 | Samsung Electronics Co., Ltd., Suwon | Apparatus and method for removing a photoresist from a substrate |
| KR100505693B1 (en) | 2003-06-26 | 2005-08-03 | 삼성전자주식회사 | Cleaning method of photoresist or organic material from microelectronic device substrate |
| US7163380B2 (en) | 2003-07-29 | 2007-01-16 | Tokyo Electron Limited | Control of fluid flow in the processing of an object with a fluid |
| US20050029492A1 (en) | 2003-08-05 | 2005-02-10 | Hoshang Subawalla | Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols |
| US7250374B2 (en) | 2004-06-30 | 2007-07-31 | Tokyo Electron Limited | System and method for processing a substrate using supercritical carbon dioxide processing |
| US7195676B2 (en) | 2004-07-13 | 2007-03-27 | Air Products And Chemicals, Inc. | Method for removal of flux and other residue in dense fluid systems |
| US7307019B2 (en) | 2004-09-29 | 2007-12-11 | Tokyo Electron Limited | Method for supercritical carbon dioxide processing of fluoro-carbon films |
| US7491036B2 (en) | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
| US7140393B2 (en) | 2004-12-22 | 2006-11-28 | Tokyo Electron Limited | Non-contact shuttle valve for flow diversion in high pressure systems |
| US7434590B2 (en) | 2004-12-22 | 2008-10-14 | Tokyo Electron Limited | Method and apparatus for clamping a substrate in a high pressure processing system |
| US7435447B2 (en) | 2005-02-15 | 2008-10-14 | Tokyo Electron Limited | Method and system for determining flow conditions in a high pressure processing system |
| US20060180174A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator |
| US7291565B2 (en) | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| US7550075B2 (en) | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
| US7399708B2 (en) | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
| US7442636B2 (en) | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
| US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
| US7524383B2 (en) | 2005-05-25 | 2009-04-28 | Tokyo Electron Limited | Method and system for passivating a processing chamber |
| US7951723B2 (en) | 2006-10-24 | 2011-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated etch and supercritical CO2 process and chamber design |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105556A (en) * | 1987-08-12 | 1992-04-21 | Hitachi, Ltd. | Vapor washing process and apparatus |
| US5013366A (en) * | 1988-12-07 | 1991-05-07 | Hughes Aircraft Company | Cleaning process using phase shifting of dense phase gases |
| US5068040A (en) * | 1989-04-03 | 1991-11-26 | Hughes Aircraft Company | Dense phase gas photochemical process for substrate treatment |
| US5364474A (en) * | 1993-07-23 | 1994-11-15 | Williford Jr John F | Method for removing particulate matter |
| WO1996023606A1 (en) * | 1995-02-01 | 1996-08-08 | Jackson David P | Dense fluid centrifugal separation process and apparatus |
| US5868856A (en) * | 1996-07-25 | 1999-02-09 | Texas Instruments Incorporated | Method for removing inorganic contamination by chemical derivitization and extraction |
| US6242165B1 (en) * | 1998-08-28 | 2001-06-05 | Micron Technology, Inc. | Supercritical compositions for removal of organic material and methods of using same |
-
2001
- 2001-07-31 WO PCT/US2001/024185 patent/WO2002011191A2/en not_active Ceased
- 2001-07-31 AU AU2001279136A patent/AU2001279136A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002011191A3 (en) | 2002-06-20 |
| WO2002011191A2 (en) | 2002-02-07 |
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