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AU2001279136A1 - Near critical and supercritical ozone substrate treatment and apparatus for same - Google Patents

Near critical and supercritical ozone substrate treatment and apparatus for same

Info

Publication number
AU2001279136A1
AU2001279136A1 AU2001279136A AU7913601A AU2001279136A1 AU 2001279136 A1 AU2001279136 A1 AU 2001279136A1 AU 2001279136 A AU2001279136 A AU 2001279136A AU 7913601 A AU7913601 A AU 7913601A AU 2001279136 A1 AU2001279136 A1 AU 2001279136A1
Authority
AU
Australia
Prior art keywords
same
substrate treatment
near critical
supercritical ozone
ozone substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001279136A
Inventor
David P. Jackson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deflex Corp
Original Assignee
Deflex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deflex Corp filed Critical Deflex Corp
Publication of AU2001279136A1 publication Critical patent/AU2001279136A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841Cleaning during or after manufacture
    • B81C1/00849Cleaning during or after manufacture during manufacture
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Processing Of Solid Wastes (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
AU2001279136A 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same Abandoned AU2001279136A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22195600P 2000-07-31 2000-07-31
US60221956 2000-07-31
PCT/US2001/024185 WO2002011191A2 (en) 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same

Publications (1)

Publication Number Publication Date
AU2001279136A1 true AU2001279136A1 (en) 2002-02-13

Family

ID=22830142

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001279136A Abandoned AU2001279136A1 (en) 2000-07-31 2001-07-31 Near critical and supercritical ozone substrate treatment and apparatus for same

Country Status (2)

Country Link
AU (1) AU2001279136A1 (en)
WO (1) WO2002011191A2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL152376A0 (en) 2000-04-25 2003-05-29 Tokyo Electron Ltd Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
WO2002009147A2 (en) 2000-07-26 2002-01-31 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US6928746B2 (en) 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
AU2003220039A1 (en) 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US7267727B2 (en) 2002-09-24 2007-09-11 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids and ultrasonic energy
DE102004029077B4 (en) * 2003-06-26 2010-07-22 Samsung Electronics Co., Ltd., Suwon Apparatus and method for removing a photoresist from a substrate
KR100505693B1 (en) 2003-06-26 2005-08-03 삼성전자주식회사 Cleaning method of photoresist or organic material from microelectronic device substrate
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US20050029492A1 (en) 2003-08-05 2005-02-10 Hoshang Subawalla Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7195676B2 (en) 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US7951723B2 (en) 2006-10-24 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated etch and supercritical CO2 process and chamber design

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5364474A (en) * 1993-07-23 1994-11-15 Williford Jr John F Method for removing particulate matter
WO1996023606A1 (en) * 1995-02-01 1996-08-08 Jackson David P Dense fluid centrifugal separation process and apparatus
US5868856A (en) * 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
US6242165B1 (en) * 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same

Also Published As

Publication number Publication date
WO2002011191A3 (en) 2002-06-20
WO2002011191A2 (en) 2002-02-07

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