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AU2001279033A1 - Process for removing an oxide during the fabrication of a resistor - Google Patents

Process for removing an oxide during the fabrication of a resistor

Info

Publication number
AU2001279033A1
AU2001279033A1 AU2001279033A AU7903301A AU2001279033A1 AU 2001279033 A1 AU2001279033 A1 AU 2001279033A1 AU 2001279033 A AU2001279033 A AU 2001279033A AU 7903301 A AU7903301 A AU 7903301A AU 2001279033 A1 AU2001279033 A1 AU 2001279033A1
Authority
AU
Australia
Prior art keywords
fabrication
resistor
oxide during
oxide
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001279033A
Inventor
Douglas J. Bonser
Matthew Purdy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001279033A1 publication Critical patent/AU2001279033A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/47Resistors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Integrated Circuits (AREA)
AU2001279033A 2000-09-13 2001-07-26 Process for removing an oxide during the fabrication of a resistor Abandoned AU2001279033A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/660,724 2000-09-13
US09/660,724 US6365481B1 (en) 2000-09-13 2000-09-13 Isotropic resistor protect etch to aid in residue removal
PCT/US2001/023581 WO2002023612A2 (en) 2000-09-13 2001-07-26 Process for removing an oxide during the fabrication of a resistor

Publications (1)

Publication Number Publication Date
AU2001279033A1 true AU2001279033A1 (en) 2002-03-26

Family

ID=24650719

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001279033A Abandoned AU2001279033A1 (en) 2000-09-13 2001-07-26 Process for removing an oxide during the fabrication of a resistor

Country Status (7)

Country Link
US (1) US6365481B1 (en)
EP (1) EP1346404A2 (en)
JP (1) JP2004509465A (en)
KR (1) KR100847365B1 (en)
CN (1) CN1266747C (en)
AU (1) AU2001279033A1 (en)
WO (1) WO2002023612A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4982921B2 (en) * 2001-03-05 2012-07-25 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
US6586311B2 (en) * 2001-04-25 2003-07-01 Advanced Micro Devices, Inc. Salicide block for silicon-on-insulator (SOI) applications
US6599831B1 (en) * 2002-04-30 2003-07-29 Advanced Micro Devices, Inc. Metal gate electrode using silicidation and method of formation thereof
US7622345B2 (en) * 2005-03-17 2009-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fully silicided gate electrodes and unsilicided poly resistors
US20100148262A1 (en) * 2008-12-17 2010-06-17 Knut Stahrenberg Resistors and Methods of Manufacture Thereof
KR20110100738A (en) * 2010-03-05 2011-09-15 삼성전자주식회사 Semiconductor memory device and manufacturing method thereof
KR102766491B1 (en) 2020-08-27 2025-02-14 삼성전자주식회사 Semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143566A (en) * 1982-02-22 1983-08-26 Hitachi Ltd Semiconductor device and its manufacturing method
US5304502A (en) * 1988-11-08 1994-04-19 Yamaha Corporation Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor
JPH04267329A (en) * 1991-02-22 1992-09-22 Fujitsu Ltd Manufacture of semiconductor device
JP2705476B2 (en) * 1992-08-07 1998-01-28 ヤマハ株式会社 Method for manufacturing semiconductor device
US5610099A (en) * 1994-06-28 1997-03-11 Ramtron International Corporation Process for fabricating transistors using composite nitride structure
JPH0831949A (en) * 1994-07-08 1996-02-02 Ricoh Co Ltd Dual gate structure CMOS semiconductor device and manufacturing method thereof
JPH08102505A (en) * 1994-09-30 1996-04-16 Sony Corp Method for manufacturing semiconductor device
KR100215845B1 (en) * 1997-03-17 1999-08-16 구본준 Semiconductor device manufacturing method
EP0923116A1 (en) * 1997-12-12 1999-06-16 STMicroelectronics S.r.l. Process for manufacturing integrated multi-crystal silicon resistors in MOS technology and integrated MOS device comprising multi-crystal silicon resistors
KR20000043882A (en) * 1998-12-29 2000-07-15 김영환 Method for forming device isolation film of semiconductor device
US6245627B1 (en) * 1999-02-16 2001-06-12 United Microelectronics Corp. Method of fabricating a load resistor for an SRAM

Also Published As

Publication number Publication date
US6365481B1 (en) 2002-04-02
EP1346404A2 (en) 2003-09-24
KR20030029993A (en) 2003-04-16
CN1460290A (en) 2003-12-03
CN1266747C (en) 2006-07-26
KR100847365B1 (en) 2008-07-21
WO2002023612A3 (en) 2003-07-24
JP2004509465A (en) 2004-03-25
WO2002023612A2 (en) 2002-03-21

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