AU2001279033A1 - Process for removing an oxide during the fabrication of a resistor - Google Patents
Process for removing an oxide during the fabrication of a resistorInfo
- Publication number
- AU2001279033A1 AU2001279033A1 AU2001279033A AU7903301A AU2001279033A1 AU 2001279033 A1 AU2001279033 A1 AU 2001279033A1 AU 2001279033 A AU2001279033 A AU 2001279033A AU 7903301 A AU7903301 A AU 7903301A AU 2001279033 A1 AU2001279033 A1 AU 2001279033A1
- Authority
- AU
- Australia
- Prior art keywords
- fabrication
- resistor
- oxide during
- oxide
- during
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/660,724 | 2000-09-13 | ||
| US09/660,724 US6365481B1 (en) | 2000-09-13 | 2000-09-13 | Isotropic resistor protect etch to aid in residue removal |
| PCT/US2001/023581 WO2002023612A2 (en) | 2000-09-13 | 2001-07-26 | Process for removing an oxide during the fabrication of a resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001279033A1 true AU2001279033A1 (en) | 2002-03-26 |
Family
ID=24650719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001279033A Abandoned AU2001279033A1 (en) | 2000-09-13 | 2001-07-26 | Process for removing an oxide during the fabrication of a resistor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6365481B1 (en) |
| EP (1) | EP1346404A2 (en) |
| JP (1) | JP2004509465A (en) |
| KR (1) | KR100847365B1 (en) |
| CN (1) | CN1266747C (en) |
| AU (1) | AU2001279033A1 (en) |
| WO (1) | WO2002023612A2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4982921B2 (en) * | 2001-03-05 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
| US6586311B2 (en) * | 2001-04-25 | 2003-07-01 | Advanced Micro Devices, Inc. | Salicide block for silicon-on-insulator (SOI) applications |
| US6599831B1 (en) * | 2002-04-30 | 2003-07-29 | Advanced Micro Devices, Inc. | Metal gate electrode using silicidation and method of formation thereof |
| US7622345B2 (en) * | 2005-03-17 | 2009-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming fully silicided gate electrodes and unsilicided poly resistors |
| US20100148262A1 (en) * | 2008-12-17 | 2010-06-17 | Knut Stahrenberg | Resistors and Methods of Manufacture Thereof |
| KR20110100738A (en) * | 2010-03-05 | 2011-09-15 | 삼성전자주식회사 | Semiconductor memory device and manufacturing method thereof |
| KR102766491B1 (en) | 2020-08-27 | 2025-02-14 | 삼성전자주식회사 | Semiconductor device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143566A (en) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| US5304502A (en) * | 1988-11-08 | 1994-04-19 | Yamaha Corporation | Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor |
| JPH04267329A (en) * | 1991-02-22 | 1992-09-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2705476B2 (en) * | 1992-08-07 | 1998-01-28 | ヤマハ株式会社 | Method for manufacturing semiconductor device |
| US5610099A (en) * | 1994-06-28 | 1997-03-11 | Ramtron International Corporation | Process for fabricating transistors using composite nitride structure |
| JPH0831949A (en) * | 1994-07-08 | 1996-02-02 | Ricoh Co Ltd | Dual gate structure CMOS semiconductor device and manufacturing method thereof |
| JPH08102505A (en) * | 1994-09-30 | 1996-04-16 | Sony Corp | Method for manufacturing semiconductor device |
| KR100215845B1 (en) * | 1997-03-17 | 1999-08-16 | 구본준 | Semiconductor device manufacturing method |
| EP0923116A1 (en) * | 1997-12-12 | 1999-06-16 | STMicroelectronics S.r.l. | Process for manufacturing integrated multi-crystal silicon resistors in MOS technology and integrated MOS device comprising multi-crystal silicon resistors |
| KR20000043882A (en) * | 1998-12-29 | 2000-07-15 | 김영환 | Method for forming device isolation film of semiconductor device |
| US6245627B1 (en) * | 1999-02-16 | 2001-06-12 | United Microelectronics Corp. | Method of fabricating a load resistor for an SRAM |
-
2000
- 2000-09-13 US US09/660,724 patent/US6365481B1/en not_active Expired - Lifetime
-
2001
- 2001-07-26 WO PCT/US2001/023581 patent/WO2002023612A2/en not_active Ceased
- 2001-07-26 EP EP01957272A patent/EP1346404A2/en not_active Withdrawn
- 2001-07-26 AU AU2001279033A patent/AU2001279033A1/en not_active Abandoned
- 2001-07-26 CN CNB018155642A patent/CN1266747C/en not_active Expired - Fee Related
- 2001-07-26 JP JP2002527560A patent/JP2004509465A/en not_active Withdrawn
- 2001-07-26 KR KR1020037003665A patent/KR100847365B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6365481B1 (en) | 2002-04-02 |
| EP1346404A2 (en) | 2003-09-24 |
| KR20030029993A (en) | 2003-04-16 |
| CN1460290A (en) | 2003-12-03 |
| CN1266747C (en) | 2006-07-26 |
| KR100847365B1 (en) | 2008-07-21 |
| WO2002023612A3 (en) | 2003-07-24 |
| JP2004509465A (en) | 2004-03-25 |
| WO2002023612A2 (en) | 2002-03-21 |
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