[go: up one dir, main page]

AU2001278105A1 - Silicon wafer with embedded optoelectronic material for monolithic oeic - Google Patents

Silicon wafer with embedded optoelectronic material for monolithic oeic

Info

Publication number
AU2001278105A1
AU2001278105A1 AU2001278105A AU7810501A AU2001278105A1 AU 2001278105 A1 AU2001278105 A1 AU 2001278105A1 AU 2001278105 A AU2001278105 A AU 2001278105A AU 7810501 A AU7810501 A AU 7810501A AU 2001278105 A1 AU2001278105 A1 AU 2001278105A1
Authority
AU
Australia
Prior art keywords
layer
embedded
silicon wafer
cmos
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001278105A
Other languages
English (en)
Inventor
Eugene A. Fitzgerald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amber Wave Systems Inc
Original Assignee
Amber Wave Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amber Wave Systems Inc filed Critical Amber Wave Systems Inc
Publication of AU2001278105A1 publication Critical patent/AU2001278105A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Optical Integrated Circuits (AREA)
  • Absorbent Articles And Supports Therefor (AREA)
  • Prostheses (AREA)
  • Orthopedics, Nursing, And Contraception (AREA)
  • Element Separation (AREA)
AU2001278105A 2000-08-04 2001-08-01 Silicon wafer with embedded optoelectronic material for monolithic oeic Abandoned AU2001278105A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22340700P 2000-08-04 2000-08-04
US60/223,407 2000-08-04
PCT/US2001/024075 WO2002013342A2 (fr) 2000-08-04 2001-08-01 Plaquette de silicium avec materiau optoelectronique integre pour circuit electronique optoelectronique integre monolithique

Publications (1)

Publication Number Publication Date
AU2001278105A1 true AU2001278105A1 (en) 2002-02-18

Family

ID=22836361

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001278105A Abandoned AU2001278105A1 (en) 2000-08-04 2001-08-01 Silicon wafer with embedded optoelectronic material for monolithic oeic

Country Status (7)

Country Link
US (4) US6645829B2 (fr)
EP (1) EP1350290B1 (fr)
JP (1) JP5066321B2 (fr)
AT (1) ATE346410T1 (fr)
AU (1) AU2001278105A1 (fr)
DE (1) DE60124766T2 (fr)
WO (1) WO2002013342A2 (fr)

Families Citing this family (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6807328B2 (en) * 1998-04-17 2004-10-19 John Farah Polished polyimide substrate
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
CN1430792A (zh) 2000-05-31 2003-07-16 摩托罗拉公司 半导体器件及方法
US20060125092A1 (en) * 2000-07-18 2006-06-15 Marshall Paul N High density integrated circuit package architecture
WO2002009187A2 (fr) 2000-07-24 2002-01-31 Motorola, Inc. Diodes a heterojonction tunnel et processus de fabrication de celles-ci
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (fr) 2001-04-02 2002-10-17 Motorola, Inc. Structure de semi-conducteur a courant de fuite attenue
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US20030012965A1 (en) * 2001-07-10 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
US6992321B2 (en) * 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030022412A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Monolithic semiconductor-piezoelectric device structures and electroacoustic charge transport devices
US20030034491A1 (en) * 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
JP3970011B2 (ja) * 2001-12-11 2007-09-05 シャープ株式会社 半導体装置及びその製造方法
US6924510B2 (en) * 2002-05-06 2005-08-02 Intel Corporation Silicon and silicon/germanium light-emitting device, methods and systems
US7157119B2 (en) * 2002-06-25 2007-01-02 Ppg Industries Ohio, Inc. Method and compositions for applying multiple overlying organic pigmented decorations on ceramic substrates
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US7072534B2 (en) * 2002-07-22 2006-07-04 Applied Materials, Inc. Optical ready substrates
EP1776610A2 (fr) * 2002-07-22 2007-04-25 Applied Materials, Inc. Substrats optiquement préparés avec guide d`onde optique et circuits microélectroniques
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7043106B2 (en) 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US20050072979A1 (en) * 2002-07-22 2005-04-07 Applied Materials, Inc. Optical-ready wafers
WO2004019391A2 (fr) * 2002-08-23 2004-03-04 Amberwave Systems Corporation Heterostructures semi-conductrices possedant des empilements de dislocations reduits et procedes associes
JP2004140038A (ja) * 2002-10-15 2004-05-13 Sumitomo Chem Co Ltd 薄膜結晶ウェーハの製造方法及び半導体デバイス並びにその製造方法
US20040079285A1 (en) * 2002-10-24 2004-04-29 Motorola, Inc. Automation of oxide material growth in molecular beam epitaxy systems
US7169619B2 (en) * 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) * 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6993225B2 (en) 2004-02-10 2006-01-31 Sioptical, Inc. Tapered structure for providing coupling between external optical device and planar optical waveguide and method of forming the same
US6897498B2 (en) * 2003-03-31 2005-05-24 Sioptical, Inc. Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform
DE10318284A1 (de) * 2003-04-22 2004-11-25 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
US7001788B2 (en) * 2003-05-29 2006-02-21 Applied Materials, Inc. Maskless fabrication of waveguide mirrors
US7529435B2 (en) * 2003-05-29 2009-05-05 Applied Materials, Inc. Serial routing of optical signals
EP1649566A4 (fr) 2003-06-27 2007-08-15 Applied Materials Inc Systeme laser a points quantiques pulses presentant faible une instabilite
US7164182B2 (en) 2003-07-07 2007-01-16 Micron Technology, Inc. Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
US20050016446A1 (en) * 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
US7279369B2 (en) * 2003-08-21 2007-10-09 Intel Corporation Germanium on insulator fabrication via epitaxial germanium bonding
US7579263B2 (en) 2003-09-09 2009-08-25 Stc.Unm Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US20050067377A1 (en) * 2003-09-25 2005-03-31 Ryan Lei Germanium-on-insulator fabrication utilizing wafer bonding
US7084460B2 (en) * 2003-11-03 2006-08-01 International Business Machines Corporation Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
KR100624415B1 (ko) * 2003-12-17 2006-09-18 삼성전자주식회사 광디바이스 및 그 제조방법
US7369718B2 (en) * 2004-01-23 2008-05-06 Intel Corporation Package substrate pattern to accommodate optical waveguide
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7791061B2 (en) 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
CN101866828B (zh) * 2004-06-02 2013-03-20 应用材料公司 电子装置制造室及其形成方法
GB0423599D0 (en) * 2004-10-23 2004-11-24 Univ Belfast Electro-optical device
US20060227825A1 (en) * 2005-04-07 2006-10-12 Nl-Nanosemiconductor Gmbh Mode-locked quantum dot laser with controllable gain properties by multiple stacking
WO2007027615A1 (fr) * 2005-09-01 2007-03-08 Applied Materials, Inc. Technique d'arete pour la fabrication d'un capteur optique et d'un guide d'ondes optique
WO2007044554A2 (fr) * 2005-10-07 2007-04-19 Lee, Michael, J. Guides d'onde a base de silicium amorphe depose sur des substrats disposant d'une couche formant barriere
US7705370B2 (en) * 2005-11-01 2010-04-27 Massachusetts Institute Of Technology Monolithically integrated photodetectors
US20070252223A1 (en) * 2005-12-05 2007-11-01 Massachusetts Institute Of Technology Insulated gate devices and method of making same
US8411711B2 (en) * 2005-12-07 2013-04-02 Innolume Gmbh Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
US7835408B2 (en) * 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
WO2007065614A2 (fr) 2005-12-07 2007-06-14 Innolume Gmbh Source laser avec emission a spectre a large bande
US7561607B2 (en) * 2005-12-07 2009-07-14 Innolume Gmbh Laser source with broadband spectrum emission
US8410523B2 (en) * 2006-01-11 2013-04-02 Diana L. Huffaker Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys
US8063397B2 (en) * 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
US7805826B1 (en) * 2006-07-06 2010-10-05 Hewlett-Packard Development Company, L.P. Fabrication of slot waveguide
WO2008033747A2 (fr) * 2006-09-11 2008-03-20 Curis, Inc. Petites molécules multifonctionnelles servant d'agents anti-prolifératifs
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
FR2912552B1 (fr) 2007-02-14 2009-05-22 Soitec Silicon On Insulator Structure multicouche et son procede de fabrication.
US8617997B2 (en) 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US8053810B2 (en) * 2007-09-07 2011-11-08 International Business Machines Corporation Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
US7974505B2 (en) 2007-10-17 2011-07-05 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating selectively coupled optical waveguides on a substrate
US8192638B2 (en) 2007-10-18 2012-06-05 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing multiple layers of waveguides
US7736934B2 (en) 2007-10-19 2010-06-15 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing vertical germanium detectors
US20100092682A1 (en) * 2007-10-24 2010-04-15 Bae Systems Information And Electronic Systems Int Method for Fabricating a Heater Capable of Adjusting Refractive Index of an Optical Waveguide
WO2009055778A1 (fr) 2007-10-25 2009-04-30 Bae Systems Information And Electronic Systems Integration Inc. Procédé pour fabriquer des détecteurs latéraux au germanium
US7811844B2 (en) 2007-10-26 2010-10-12 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating electronic and photonic devices on a semiconductor substrate
US8031343B2 (en) * 2007-10-29 2011-10-04 Bae Systems Information And Electronic Systems Integration Inc. High-index contrast waveguide optical gyroscope having segmented paths
US8871554B2 (en) * 2007-10-30 2014-10-28 Bae Systems Information And Electronic Systems Integration Inc. Method for fabricating butt-coupled electro-absorptive modulators
US20100140587A1 (en) * 2007-10-31 2010-06-10 Carothers Daniel N High-Injection Heterojunction Bipolar Transistor
GB0802088D0 (en) * 2008-02-05 2008-03-12 Panalytical Bv Imaging detector
WO2009115859A1 (fr) * 2008-03-19 2009-09-24 S.O.I. Tec Silicon On Insulator Technologies Substrats pour circuits optiques monolithiques et circuits électroniques
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US7693354B2 (en) * 2008-08-29 2010-04-06 Bae Systems Information And Electronic Systems Integration Inc. Salicide structures for heat-influenced semiconductor applications
US7987066B2 (en) * 2008-08-29 2011-07-26 Bae Systems Information And Electronic Systems Integration Inc. Components and configurations for test and valuation of integrated optical busses
US8148265B2 (en) * 2008-08-29 2012-04-03 Bae Systems Information And Electronic Systems Integration Inc. Two-step hardmask fabrication methodology for silicon waveguides
US7853101B2 (en) * 2008-08-29 2010-12-14 Bae Systems Information And Electronic Systems Integration Inc. Bi-rate adaptive optical transfer engine
US7715663B2 (en) * 2008-08-29 2010-05-11 Bae Systems Information And Electronic Systems Integration Inc. Integrated optical latch
US8288290B2 (en) * 2008-08-29 2012-10-16 Bae Systems Information And Electronic Systems Integration Inc. Integration CMOS compatible of micro/nano optical gain materials
US8877616B2 (en) 2008-09-08 2014-11-04 Luxtera, Inc. Method and system for monolithic integration of photonics and electronics in CMOS processes
US8831437B2 (en) 2009-09-04 2014-09-09 Luxtera, Inc. Method and system for a photonic interposer
US8018821B2 (en) * 2008-09-30 2011-09-13 Intel Corporation Protection layers for media protection during fabrication of probe memory device
US7847353B2 (en) * 2008-12-05 2010-12-07 Bae Systems Information And Electronic Systems Integration Inc. Multi-thickness semiconductor with fully depleted devices and photonic integration
US20110132445A1 (en) * 2009-05-29 2011-06-09 Pitera Arthur J High-efficiency multi-junction solar cell structures
US9305779B2 (en) * 2009-08-11 2016-04-05 Bae Systems Information And Electronic Systems Integration Inc. Method for growing germanium epitaxial films
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
EP2743981A1 (fr) * 2009-10-30 2014-06-18 Imec Procédé de fabrication d'une structure de substrat à semi-conducteur intégré
FR2954585B1 (fr) * 2009-12-23 2012-03-02 Soitec Silicon Insulator Technologies Procede de realisation d'une heterostructure avec minimisation de contrainte
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US8824837B2 (en) 2010-08-26 2014-09-02 The Board Of Trustees Of The Leland Stanford Junior University Integration of optoelectronics with waveguides using interposer layer
US8124470B1 (en) * 2010-09-29 2012-02-28 International Business Machines Corporation Strained thin body semiconductor-on-insulator substrate and device
EP2461352B1 (fr) * 2010-12-06 2013-07-10 Imec Procédé de fabrication de contacts à faible résistance sur germanium de type n
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
FR2974413B1 (fr) * 2011-04-21 2014-06-13 Commissariat Energie Atomique Detecteur de gaz photoacoustique a cellule de helmholtz
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (fr) 2011-07-13 2013-01-17 Sionyx, Inc. Dispositifs de prise d'images biométriques et procédés associés
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2013152176A1 (fr) * 2012-04-04 2013-10-10 Massachusetts Institute Of Technology Intégration monolithique de dispositifs cmos et non-silicium
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
US10094988B2 (en) 2012-08-31 2018-10-09 Micron Technology, Inc. Method of forming photonics structures
WO2014127376A2 (fr) 2013-02-15 2014-08-21 Sionyx, Inc. Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés
JP2014165292A (ja) * 2013-02-25 2014-09-08 Hitachi Ltd 発光素子及びその製造方法並びに光送受信器
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
WO2014209421A1 (fr) 2013-06-29 2014-12-31 Sionyx, Inc. Régions texturées formées de tranchées peu profondes et procédés associés.
US9696486B2 (en) * 2013-07-31 2017-07-04 Oracle International Corporation Surface-normal coupler for silicon-on-insulator platforms
US9331227B2 (en) * 2014-01-10 2016-05-03 The Boeing Company Directly bonded, lattice-mismatched semiconductor device
US9766410B1 (en) * 2014-07-11 2017-09-19 Acacia Communications, Inc. Wafer-level testing of photonic integrated circuits with optical IOs
CN104090334A (zh) * 2014-07-30 2014-10-08 四川飞阳科技有限公司 平面光波导器件芯层薄膜的制备方法
US9678273B2 (en) * 2015-06-01 2017-06-13 International Business Machines Corporation Device for propagating light and method for fabricating a device
US9658400B2 (en) 2015-06-01 2017-05-23 International Business Machines Corporation Method for fabricating a device for propagating light
US10109983B2 (en) * 2016-04-28 2018-10-23 Hewlett Packard Enterprise Development Lp Devices with quantum dots
US10122153B2 (en) 2016-08-29 2018-11-06 International Business Machines Corporation Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same
US10566765B2 (en) 2016-10-27 2020-02-18 Hewlett Packard Enterprise Development Lp Multi-wavelength semiconductor lasers
JP7079940B2 (ja) * 2017-01-13 2022-06-03 マサチューセッツ インスティテュート オブ テクノロジー ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体
US10680407B2 (en) 2017-04-10 2020-06-09 Hewlett Packard Enterprise Development Lp Multi-wavelength semiconductor comb lasers
US11664357B2 (en) 2018-07-03 2023-05-30 Adeia Semiconductor Bonding Technologies Inc. Techniques for joining dissimilar materials in microelectronics
US11545587B2 (en) 2020-01-10 2023-01-03 Newport Fab, Llc Semiconductor structure having group III-V device on group IV substrate and contacts with liner stacks
US11233159B2 (en) * 2020-01-10 2022-01-25 Newport Fab, Llc Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal liners
US11581452B2 (en) 2020-01-10 2023-02-14 Newport Fab, Llc Semiconductor structure having group III-V device on group IV substrate and contacts with precursor stacks
US11296482B2 (en) 2020-01-10 2022-04-05 Newport Fab, Llc Semiconductor structure having group III-V chiplet on group IV substrate and cavity in proximity to heating element
US11349280B2 (en) 2020-01-10 2022-05-31 Newport Fab, Llc Semiconductor structure having group III-V device on group IV substrate
US11929442B2 (en) 2020-01-10 2024-03-12 Newport Fab, Llc Structure and method for process control monitoring for group III-V devices integrated with group IV substrate
US11495631B2 (en) * 2020-02-07 2022-11-08 Sensors Unlimited, Inc. Pin mesa diodes with over-current protection
US10951003B1 (en) * 2020-02-25 2021-03-16 Inphi Corporation Light source for integrated silicon photonics
WO2021188846A1 (fr) 2020-03-19 2021-09-23 Invensas Bonding Technologies, Inc. Commande de compensation de dimension pour structures directement liées
WO2021217256A1 (fr) * 2020-04-27 2021-11-04 Moutanabbir Oussama Dispositif optoélectronique infrarouge à ondes courtes et infrarouge à ondes moyennes et procédés pour sa fabrication
US11165509B1 (en) 2020-06-05 2021-11-02 Marvell Asia Pte, Ltd. Method for co-packaging light engine chiplets on switch substrate
US11428646B2 (en) * 2020-08-28 2022-08-30 Openlight Photonics, Inc. Loss monitoring in photonic circuit fabrication
US12074243B1 (en) * 2023-08-24 2024-08-27 Amplification Technologies, Corp. Method for fabricating high-sensitivity photodetectors

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370510A (en) 1980-09-26 1983-01-25 California Institute Of Technology Gallium arsenide single crystal solar cell structure and method of making
US4774205A (en) 1986-06-13 1988-09-27 Massachusetts Institute Of Technology Monolithic integration of silicon and gallium arsenide devices
US4888302A (en) 1987-11-25 1989-12-19 North American Philips Corporation Method of reduced stress recrystallization
CA1301957C (fr) 1987-12-23 1992-05-26 Michael Anthony Gell Heterostructures de germanium-silicium
JPH01315127A (ja) * 1988-03-18 1989-12-20 Fujitsu Ltd ガリウムヒ素層の形成方法
US5068695A (en) 1988-04-29 1991-11-26 Sri International Low dislocation density semiconductor device
JPH02194519A (ja) * 1989-01-23 1990-08-01 Nippon Telegr & Teleph Corp <Ntt> 複合半導体基板およびその製造方法
JPH02306680A (ja) * 1989-05-22 1990-12-20 Hikari Gijutsu Kenkyu Kaihatsu Kk 光電子集積回路装置およびその製造方法
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5102812A (en) 1989-11-09 1992-04-07 Bell Communications Research Method of making a lateral bipolar heterojunction structure
US5221413A (en) 1991-04-24 1993-06-22 At&T Bell Laboratories Method for making low defect density semiconductor heterostructure and devices made thereby
JPH0594929A (ja) * 1991-10-02 1993-04-16 Hitachi Ltd 複合基板とその製造方法及び半導体装置
KR970003848B1 (ko) * 1991-10-17 1997-03-22 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조방법
US5207864A (en) 1991-12-30 1993-05-04 Bell Communications Research Low-temperature fusion of dissimilar semiconductors
US5401983A (en) * 1992-04-08 1995-03-28 Georgia Tech Research Corporation Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices
DE69315811T2 (de) 1992-12-16 1998-06-10 Koninkl Philips Electronics Nv Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung
US5314107A (en) 1992-12-31 1994-05-24 Motorola, Inc. Automated method for joining wafers
US5346848A (en) 1993-06-01 1994-09-13 Motorola, Inc. Method of bonding silicon and III-V semiconductor materials
US5461243A (en) 1993-10-29 1995-10-24 International Business Machines Corporation Substrate for tensilely strained semiconductor
JP2669368B2 (ja) 1994-03-16 1997-10-27 日本電気株式会社 Ｓｉ基板上化合物半導体積層構造の製造方法
US5534713A (en) 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
US5937274A (en) 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
JP3147141B2 (ja) 1995-08-30 2001-03-19 株式会社日立製作所 光アセンブリ
JPH09127352A (ja) * 1995-10-30 1997-05-16 Hitachi Ltd 半導体装置およびその製造方法
US6151347A (en) 1996-01-17 2000-11-21 Nortel Networks Corporation Laser diode and method of fabrication thereof
US5726462A (en) 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
JP2748917B2 (ja) 1996-03-22 1998-05-13 日本電気株式会社 半導体装置
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5805755A (en) 1996-06-17 1998-09-08 Tellium, Inc. Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration
US5906951A (en) * 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
EP1016129B2 (fr) 1997-06-24 2009-06-10 Massachusetts Institute Of Technology Regulation des densites de dislocation filetees au moyen de couches a teneur echelonnee et d'une planarisation
US6136667A (en) 1997-10-08 2000-10-24 Lucent Technologies Inc. Method for bonding two crystalline substrates together
US5966622A (en) 1997-10-08 1999-10-12 Lucent Technologies Inc. Process for bonding crystalline substrates with different crystal lattices
US6232138B1 (en) * 1997-12-01 2001-05-15 Massachusetts Institute Of Technology Relaxed InxGa(1-x)as buffers
JPH11238902A (ja) 1998-02-19 1999-08-31 Nec Corp 半導体光検出装置及び半導体光検出装置の製造方法
JPH11274467A (ja) * 1998-03-26 1999-10-08 Murata Mfg Co Ltd 光電子集積回路素子
US6066513A (en) 1998-10-02 2000-05-23 International Business Machines Corporation Process for precise multichip integration and product thereof
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
US6346453B1 (en) * 2000-01-27 2002-02-12 Sige Microsystems Inc. Method of producing a SI-GE base heterojunction bipolar device
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

Also Published As

Publication number Publication date
WO2002013342A2 (fr) 2002-02-14
EP1350290A2 (fr) 2003-10-08
DE60124766T2 (de) 2007-10-11
ATE346410T1 (de) 2006-12-15
US20020068396A1 (en) 2002-06-06
US20020066899A1 (en) 2002-06-06
JP2004506336A (ja) 2004-02-26
US6677655B2 (en) 2004-01-13
US20020052061A1 (en) 2002-05-02
DE60124766D1 (de) 2007-01-04
WO2002013342A3 (fr) 2003-08-07
EP1350290B1 (fr) 2006-11-22
US20020040983A1 (en) 2002-04-11
US6680495B2 (en) 2004-01-20
JP5066321B2 (ja) 2012-11-07
US6645829B2 (en) 2003-11-11

Similar Documents

Publication Publication Date Title
AU2001278105A1 (en) Silicon wafer with embedded optoelectronic material for monolithic oeic
WO2007082059B1 (fr) Couplage optique à bande large dans un circuit intégré photonique cmos soi mince
WO2021175072A1 (fr) Structure de couplage optique à semiconducteur et puce intégrée optique en silicium
EP0763757A3 (fr) Dispositifs sélectifs en longueur d&#39;onde utilisant des semiconducteurs du type SOI
US7343058B2 (en) Efficient light coupler from off-chip to on-chip waveguides
GB2552264A9 (en) Integrated structure and manufacturing method thereof
WO2004054001A3 (fr) Capteur d&#39;images cmos
WO2001003255A3 (fr) Laser a cavite verticale et a emission par la surface (vcsel) a espaces rapproches et photodetecteur pour applications necessitant leur exploitation independante
US7095928B2 (en) Surface-mounted photodetector for an optical waveguide
US7352924B2 (en) Micro-optical device
WO2005120187A3 (fr) Coupleur optique de couplage d&#39;une fibre optique dans un guide d&#39;onde
WO2003023465A3 (fr) Procede de compensation de birefringence de polarisation dans un demultiplexeur a guide d&#39;ondes au moyen d&#39;un compensateur dote d&#39;une couche de recouvrement a indice de refraction eleve
WO2002008806A3 (fr) Systeme optique monolithique
CA2328789A1 (fr) Microcircuit d&#39;optique integre multifonctionnel ayant un taux ameliore d&#39;extinction de polarisation
KR100492980B1 (ko) 수직입사 수광소자를 이용한 광학장치
CN112698452A (zh) 一种光波导芯片探针及基于该探针的反射式垂直光耦合结构
KR910005948B1 (ko) 기판 지지 도파관과 정렬된 콤포넌트를 구비한 소자
CA2013849A1 (fr) Guide de lumiere et methode de fabrication de ce guide
JP2011077133A (ja) 光双方向通信モジュール及び光双方向通信装置
CN111129201A (zh) 一种光电探测器
WO2006091741A3 (fr) Photodetecteur a visualisation de bord
WO2018072489A1 (fr) Puce de réseau de guides d&#39;ondes multimodes à courbure de 90 degrés
KR20230004199A (ko) 에탈론 보상을 갖는 높은 대역폭 광자 집적 회로
TW200601557A (en) Photosensor and solid state imaging device
JP2003195123A5 (fr)