AU2001278013A1 - Improved gan light emitting diode - Google Patents

Improved gan light emitting diode

Info

Publication number: AU2001278013A1
Authority: AU; Australia
Prior art keywords: light emitting; emitting diode; gan light; improved gan; improved
Prior art date: 2000-07-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2001278013A

Inventor

John Chen

Bingwen Liang

Robert Shih

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AXT Inc

Original Assignee

American Xtal Technology Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-07-26

Filing date

2001-07-25

Publication date

2002-02-05

2001-07-25 Application filed by American Xtal Technology Inc filed Critical American Xtal Technology Inc

2002-02-05 Publication of AU2001278013A1 publication Critical patent/AU2001278013A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

AU2001278013A 2000-07-26 2001-07-25 Improved gan light emitting diode Abandoned AU2001278013A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US09/626,443 US6897494B1 (en)	2000-07-26	2000-07-26	GaN light emitting diode with conductive outer layer
US09626443		2000-07-26
PCT/US2001/023452 WO2002009475A2 (en)	2000-07-26	2001-07-25	IMPROVED GaN LIGHT EMITTING DIODE

Publications (1)

Publication Number	Publication Date
AU2001278013A1 true AU2001278013A1 (en)	2002-02-05

Family

ID=24510390

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2001278013A Abandoned AU2001278013A1 (en)	2000-07-26	2001-07-25	Improved gan light emitting diode

Country Status (6)

Country	Link
US (1)	US6897494B1 (en)
EP (1)	EP1320900B1 (en)
AU (1)	AU2001278013A1 (en)
CA (1)	CA2414725C (en)
ES (1)	ES2549261T3 (en)
WO (1)	WO2002009475A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
USD579019S1 (en) *	2007-08-27	2008-10-21	Podium Photonics (Guangzhou) Ltd.	Chip
KR20110077707A (en) *	2009-12-30	2011-07-07	엘지디스플레이 주식회사	Vertical Light Emitting Diode and Manufacturing Method Thereof
US8283652B2 (en)	2010-07-28	2012-10-09	SemiLEDs Optoelectronics Co., Ltd.	Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
US8723160B2 (en)	2010-07-28	2014-05-13	SemiLEDs Optoelectronics Co., Ltd.	Light emitting diode (LED) die having peripheral electrode frame and method of fabrication

Family Cites Families (21)

* Cited by examiner, † Cited by third party
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DE2725265A1 (en) *	1976-06-04	1977-12-08	Tokyo Shibaura Electric Co	SEMI-CONDUCTOR LIGHT DISPLAY DEVICE
DE2755433C2 (en) *	1977-12-13	1986-09-25	Telefunken electronic GmbH, 7100 Heilbronn	Radiation-emitting semiconductor diode
US4864370A (en) *	1987-11-16	1989-09-05	Motorola, Inc.	Electrical contact for an LED
JPH0478174A (en) *	1990-07-19	1992-03-12	Nec Corp	Semiconductor light emitting element
US5309001A (en) *	1991-11-25	1994-05-03	Sharp Kabushiki Kaisha	Light-emitting diode having a surface electrode of a tree-like form
EP1450415A3 (en) *	1993-04-28	2005-05-04	Nichia Corporation	Gallium nitride-based III-V group compound semiconductor device
JPH07254732A (en) *	1994-03-15	1995-10-03	Toshiba Corp	Semiconductor light emitting device
DE19517697A1 (en) *	1995-05-13	1996-11-14	Telefunken Microelectron	Orange to green light emitting semiconductor LED
US5903017A (en) *	1996-02-26	1999-05-11	Kabushiki Kaisha Toshiba	Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
US5977566A (en)	1996-06-05	1999-11-02	Kabushiki Kaisha Toshiba	Compound semiconductor light emitter
DE19820777C2 (en)	1997-05-08	2003-06-18	Showa Denko Kk	Electrode for semiconductor light emitting devices
JP3807020B2 (en)	1997-05-08	2006-08-09	昭和電工株式会社	Translucent electrode for light emitting semiconductor device and method for producing the same
US6268618B1 (en) *	1997-05-08	2001-07-31	Showa Denko K.K.	Electrode for light-emitting semiconductor devices and method of producing the electrode
JPH11274566A (en) *	1998-03-26	1999-10-08	Canon Inc	Light emitting device and manufacturing method thereof
US6091197A (en) *	1998-06-12	2000-07-18	Xerox Corporation	Full color tunable resonant cavity organic light emitting diode
JP2000091637A (en) *	1998-09-07	2000-03-31	Rohm Co Ltd	Manufacturing method of semiconductor light emitting device
US6307218B1 (en) *	1998-11-20	2001-10-23	Lumileds Lighting, U.S., Llc	Electrode structures for light emitting devices
JP2000208874A (en) *	1999-01-12	2000-07-28	Sony Corp	Nitride semiconductor, nitride semiconductor light emitting device, method of manufacturing nitride semiconductor, and method of manufacturing semiconductor light emitting device
US6133589A (en) *	1999-06-08	2000-10-17	Lumileds Lighting, U.S., Llc	AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6614056B1 (en) *	1999-12-01	2003-09-02	Cree Lighting Company	Scalable led with improved current spreading structures
US6255129B1 (en) *	2000-09-07	2001-07-03	Highlink Technology Corporation	Light-emitting diode device and method of manufacturing the same

2000
- 2000-07-26 US US09/626,443 patent/US6897494B1/en not_active Expired - Lifetime
2001
- 2001-07-25 WO PCT/US2001/023452 patent/WO2002009475A2/en not_active Ceased
- 2001-07-25 CA CA2414725A patent/CA2414725C/en not_active Expired - Lifetime
- 2001-07-25 AU AU2001278013A patent/AU2001278013A1/en not_active Abandoned
- 2001-07-25 EP EP01955967.3A patent/EP1320900B1/en not_active Expired - Lifetime
- 2001-07-25 ES ES01955967.3T patent/ES2549261T3/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
WO2002009475A2 (en)	2002-01-31
CA2414725A1 (en)	2002-01-31
CA2414725C (en)	2012-01-03
ES2549261T3 (en)	2015-10-26
WO2002009475A3 (en)	2002-06-27
EP1320900A2 (en)	2003-06-25
EP1320900A4 (en)	2007-02-28
US6897494B1 (en)	2005-05-24
EP1320900B1 (en)	2015-07-22

Publication	Publication Date	Title
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