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AU2001277203A1 - Method of fabricating conductor structures with metal comb bridging avoidance - Google Patents

Method of fabricating conductor structures with metal comb bridging avoidance

Info

Publication number
AU2001277203A1
AU2001277203A1 AU2001277203A AU7720301A AU2001277203A1 AU 2001277203 A1 AU2001277203 A1 AU 2001277203A1 AU 2001277203 A AU2001277203 A AU 2001277203A AU 7720301 A AU7720301 A AU 7720301A AU 2001277203 A1 AU2001277203 A1 AU 2001277203A1
Authority
AU
Australia
Prior art keywords
avoidance
bridging
conductor structures
metal comb
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277203A
Inventor
Bradley K. Davis
Shengnian Song
Sey-Ping Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001277203A1 publication Critical patent/AU2001277203A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU2001277203A 2000-09-22 2001-07-26 Method of fabricating conductor structures with metal comb bridging avoidance Abandoned AU2001277203A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/668,443 US6492281B1 (en) 2000-09-22 2000-09-22 Method of fabricating conductor structures with metal comb bridging avoidance
US09668443 2000-09-22
PCT/US2001/023582 WO2002025715A2 (en) 2000-09-22 2001-07-26 Method of fabricating conductor structures with metal comb bridging avoidance

Publications (1)

Publication Number Publication Date
AU2001277203A1 true AU2001277203A1 (en) 2002-04-02

Family

ID=24682334

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277203A Abandoned AU2001277203A1 (en) 2000-09-22 2001-07-26 Method of fabricating conductor structures with metal comb bridging avoidance

Country Status (3)

Country Link
US (1) US6492281B1 (en)
AU (1) AU2001277203A1 (en)
WO (1) WO2002025715A2 (en)

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US20020137890A1 (en) * 1997-03-31 2002-09-26 Genentech, Inc. Secreted and transmembrane polypeptides and nucleic acids encoding the same
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7101799B2 (en) 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7082345B2 (en) 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US6950716B2 (en) * 2001-08-13 2005-09-27 Applied Materials, Inc. Dynamic control of wafer processing paths in semiconductor manufacturing processes
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
JP2005535130A (en) 2002-08-01 2005-11-17 アプライド マテリアルズ インコーポレイテッド Methods, systems, and media for handling misrepresented measurement data in modern process control systems
US7272459B2 (en) 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
KR100567531B1 (en) * 2004-11-24 2006-04-03 주식회사 하이닉스반도체 Manufacturing method of semiconductor device
US8101251B2 (en) * 2006-07-03 2012-01-24 Dow Corning Corporation Chemically curing all-in-one warm edge spacer and seal
KR100877268B1 (en) * 2007-06-25 2009-01-07 주식회사 동부하이텍 Improvement of Aluminum-Copper Interconnection in Semiconductor Metallization Process
US11798845B2 (en) * 2020-10-28 2023-10-24 Applied Materials, Inc. Methods and apparatus for low resistivity and stress tungsten gap fill
CN113436962B (en) * 2021-06-24 2024-06-14 绍兴中芯集成电路制造股份有限公司 Method for manufacturing metal thin film and method for manufacturing semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300307A (en) 1992-09-14 1994-04-05 The United States Of America As Represented By The United States Department Of Energy Microstructure control of Al-Cu films for improved electromigration resistance
KR960011865B1 (en) 1993-06-10 1996-09-03 삼성전자 주식회사 Manufacturing method of metal layer of semiconductor device
AU7245396A (en) * 1995-09-29 1997-04-17 Intel Corporation Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions
US5877087A (en) * 1995-11-21 1999-03-02 Applied Materials, Inc. Low temperature integrated metallization process and apparatus
US5792672A (en) * 1996-03-20 1998-08-11 Chartered Semiconductor Manufacturing Ltd. Photoresist strip method
JPH1064902A (en) * 1996-07-12 1998-03-06 Applied Materials Inc Aluminum film forming method and film forming apparatus
US5994217A (en) 1996-12-16 1999-11-30 Chartered Semiconductor Manufacturing Ltd. Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers
US6087266A (en) * 1997-06-27 2000-07-11 Lam Research Corporation Methods and apparatus for improving microloading while etching a substrate
US5981382A (en) * 1998-03-13 1999-11-09 Texas Instruments Incorporated PVD deposition process for CVD aluminum liner processing
JP3353727B2 (en) * 1998-12-21 2002-12-03 日本電気株式会社 Method for forming wiring structure of semiconductor device
US6328815B1 (en) * 1999-02-19 2001-12-11 Taiwan Semiconductor Manufacturing Company Multiple chamber vacuum processing system configuration for improving the stability of mark shielding process
JP2000340570A (en) 1999-03-19 2000-12-08 Toshiba Corp Semiconductor device manufacturing method and semiconductor manufacturing apparatus
US6372645B1 (en) * 1999-11-15 2002-04-16 Taiwan Semiconductor Manufacturing Company Methods to reduce metal bridges and line shorts in integrated circuits

Also Published As

Publication number Publication date
WO2002025715A2 (en) 2002-03-28
WO2002025715A3 (en) 2002-06-06
US6492281B1 (en) 2002-12-10

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