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AU2001267913A1 - Operation monitoring method for treatment apparatus - Google Patents

Operation monitoring method for treatment apparatus

Info

Publication number
AU2001267913A1
AU2001267913A1 AU2001267913A AU6791301A AU2001267913A1 AU 2001267913 A1 AU2001267913 A1 AU 2001267913A1 AU 2001267913 A AU2001267913 A AU 2001267913A AU 6791301 A AU6791301 A AU 6791301A AU 2001267913 A1 AU2001267913 A1 AU 2001267913A1
Authority
AU
Australia
Prior art keywords
treatment apparatus
monitoring method
operation monitoring
treatment
monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001267913A
Inventor
Shinji Sakano
Tsuyoshi Sendoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000201729A external-priority patent/JP4570736B2/en
Priority claimed from JP2000201731A external-priority patent/JP4610021B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001267913A1 publication Critical patent/AU2001267913A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
AU2001267913A 2000-07-04 2001-07-03 Operation monitoring method for treatment apparatus Abandoned AU2001267913A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-201731 2000-07-04
JP2000-201729 2000-07-04
JP2000201729A JP4570736B2 (en) 2000-07-04 2000-07-04 How to monitor operating conditions
JP2000201731A JP4610021B2 (en) 2000-07-04 2000-07-04 Processing device operating method and processing device abnormality detection method
PCT/JP2001/005758 WO2002003441A1 (en) 2000-07-04 2001-07-03 Operation monitoring method for treatment apparatus

Publications (1)

Publication Number Publication Date
AU2001267913A1 true AU2001267913A1 (en) 2002-01-14

Family

ID=26595307

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001267913A Abandoned AU2001267913A1 (en) 2000-07-04 2001-07-03 Operation monitoring method for treatment apparatus

Country Status (5)

Country Link
US (1) US7054786B2 (en)
CN (1) CN1197130C (en)
AU (1) AU2001267913A1 (en)
TW (1) TW499702B (en)
WO (1) WO2002003441A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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AU2003235901A1 (en) * 2002-05-16 2003-12-02 Tokyo Electron Limited Method of predicting processing device condition or processed result
TWI276162B (en) * 2002-06-05 2007-03-11 Tokyo Electron Ltd Multi-variable analysis model forming method of processing apparatus, multi-variable analysis method for processing apparatus, control apparatus of processing apparatus, and control system of processing apparatus
US7505879B2 (en) 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
JP2004047885A (en) * 2002-07-15 2004-02-12 Matsushita Electric Ind Co Ltd Monitoring system and monitoring method for semiconductor manufacturing equipment
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
CN1295757C (en) * 2003-03-04 2007-01-17 株式会社日立高新技术 Control method of semiconductor processing device
US7010374B2 (en) 2003-03-04 2006-03-07 Hitachi High-Technologies Corporation Method for controlling semiconductor processing apparatus
JP2004335841A (en) * 2003-05-09 2004-11-25 Tokyo Electron Ltd Prediction system and prediction method for plasma treatment apparatus
JP4342921B2 (en) * 2003-12-09 2009-10-14 東京エレクトロン株式会社 Substrate processing apparatus control method and substrate processing apparatus
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
US7231321B2 (en) * 2004-11-10 2007-06-12 Tokyo Electron Limited Method of resetting substrate processing apparatus, storage medium storing program for implementing the method, and substrate processing apparatus
JP4972277B2 (en) * 2004-11-10 2012-07-11 東京エレクトロン株式会社 Substrate processing apparatus recovery method, apparatus recovery program, and substrate processing apparatus
JP4569956B2 (en) * 2005-01-24 2010-10-27 東京エレクトロン株式会社 Substrate processing apparatus restoration processing method, substrate processing apparatus, and program
CN101523307B (en) 2006-09-28 2011-06-15 三菱电机株式会社 Fault detection device and fault detection method
CN101330030B (en) * 2007-06-21 2010-09-29 中芯国际集成电路制造(上海)有限公司 Method for removing abnormal point of detection data
US9666417B2 (en) * 2013-08-28 2017-05-30 Sakai Display Products Corporation Plasma processing apparatus and method for monitoring plasma processing apparatus
CN103943452B (en) * 2014-04-28 2016-04-27 南方科技大学 Process control method and device for plasma treatment
GB2535456A (en) * 2015-02-12 2016-08-24 Edwards Ltd Processing tool monitoring
JP6351862B2 (en) 2016-01-13 2018-07-04 三菱電機株式会社 Operating state classification device
JP6676020B2 (en) 2017-09-20 2020-04-08 株式会社日立ハイテク Plasma processing apparatus and plasma processing apparatus state prediction method
JP6914211B2 (en) 2018-01-30 2021-08-04 株式会社日立ハイテク Plasma processing equipment and state prediction equipment
JP7029362B2 (en) * 2018-08-16 2022-03-03 三菱重工業株式会社 Anomaly detection device, anomaly detection method, and program

Family Cites Families (21)

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US5442562A (en) 1993-12-10 1995-08-15 Eastman Kodak Company Method of controlling a manufacturing process using multivariate analysis
US5691642A (en) * 1995-07-28 1997-11-25 Trielectrix Method and apparatus for characterizing a plasma using broadband microwave spectroscopic measurements
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
KR100560886B1 (en) * 1997-09-17 2006-03-13 동경 엘렉트론 주식회사 Systems and methods for monitoring and controlling gas plasma processes
US6341257B1 (en) * 1999-03-04 2002-01-22 Sandia Corporation Hybrid least squares multivariate spectral analysis methods
US6442445B1 (en) * 1999-03-19 2002-08-27 International Business Machines Corporation, User configurable multivariate time series reduction tool control method
US6368975B1 (en) * 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
WO2001013401A1 (en) * 1999-08-12 2001-02-22 Infineon Technologies Ag Method for monitoring a production process for preparing a substrate in semiconductor manufacturing
US6582618B1 (en) * 1999-09-08 2003-06-24 Advanced Micro Devices, Inc. Method of determining etch endpoint using principal components analysis of optical emission spectra
US6419846B1 (en) * 1999-09-08 2002-07-16 Advanced Micro Devices, Inc. Determining endpoint in etching processes using principal components analysis of optical emission spectra
US6413867B1 (en) * 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
EP1252652A1 (en) * 2000-01-25 2002-10-30 Infineon Technologies AG Method for monitoring a manufacturing process
WO2001069329A2 (en) * 2000-03-10 2001-09-20 Cyrano Sciences, Inc. Control for an industrial process using one or more multidimensional variables
JP4754757B2 (en) * 2000-03-30 2011-08-24 東京エレクトロン株式会社 Method for adjusting plasma treatment of substrate, plasma treatment system, and electrode assembly
WO2002003256A1 (en) * 2000-07-05 2002-01-10 Camo, Inc. Method and system for the dynamic analysis of data
JP3634734B2 (en) * 2000-09-22 2005-03-30 株式会社日立製作所 Plasma processing apparatus and processing method
US6627463B1 (en) * 2000-10-19 2003-09-30 Applied Materials, Inc. Situ measurement of film nitridation using optical emission spectroscopy
US6789052B1 (en) * 2000-10-24 2004-09-07 Advanced Micro Devices, Inc. Method of using control models for data compression
US6549864B1 (en) * 2001-08-13 2003-04-15 General Electric Company Multivariate statistical process analysis systems and methods for the production of melt polycarbonate
US6616759B2 (en) * 2001-09-06 2003-09-09 Hitachi, Ltd. Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
US6723574B1 (en) * 2002-09-26 2004-04-20 Lam Research Corporation Method for quantifying uniformity patterns and including expert knowledge for tool development and control

Also Published As

Publication number Publication date
CN1197130C (en) 2005-04-13
TW499702B (en) 2002-08-21
CN1451174A (en) 2003-10-22
US20040254761A1 (en) 2004-12-16
US7054786B2 (en) 2006-05-30
WO2002003441A1 (en) 2002-01-10

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