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AU2001265309A1 - Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method - Google Patents

Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method

Info

Publication number
AU2001265309A1
AU2001265309A1 AU2001265309A AU6530901A AU2001265309A1 AU 2001265309 A1 AU2001265309 A1 AU 2001265309A1 AU 2001265309 A AU2001265309 A AU 2001265309A AU 6530901 A AU6530901 A AU 6530901A AU 2001265309 A1 AU2001265309 A1 AU 2001265309A1
Authority
AU
Australia
Prior art keywords
micro
methods
forming
grain size
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001265309A
Inventor
Frank Alford
Stephane Ferrasse
Jianxing Li
Tim Scott
Vladimir Segal
Michael Thomas
Stephen Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2001265309A1 publication Critical patent/AU2001265309A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2001265309A 2000-06-02 2001-05-31 Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method Abandoned AU2001265309A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US58632600A 2000-06-02 2000-06-02
US09586326 2000-06-02
PCT/US2001/017798 WO2001094660A2 (en) 2000-06-02 2001-05-31 Sputtering target

Publications (1)

Publication Number Publication Date
AU2001265309A1 true AU2001265309A1 (en) 2001-12-17

Family

ID=24345278

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001265309A Abandoned AU2001265309A1 (en) 2000-06-02 2001-05-31 Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method

Country Status (3)

Country Link
AU (1) AU2001265309A1 (en)
TW (1) TW593719B (en)
WO (1) WO2001094660A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946039B1 (en) 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
IL161701A0 (en) * 2001-11-13 2004-09-27 Praxair Technology Inc High-purity aluminum sputter targets
JP4376487B2 (en) 2002-01-18 2009-12-02 日鉱金属株式会社 Manufacturing method of high purity nickel alloy target
US6896748B2 (en) * 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets
JP2008538591A (en) * 2005-04-21 2008-10-30 ハネウエル・インターナシヨナル・インコーポレーテツド Ruthenium-based materials and ruthenium alloys
DE602006005194D1 (en) 2005-06-29 2009-04-02 Shinetsu Chemical Co Rare earth element with a high purity surface and process for its production
CN111519157B (en) * 2020-06-23 2021-06-11 中国科学院宁波材料技术与工程研究所 Preparation method and application of Cr-Al-C series MAX phase coating

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3506782B2 (en) * 1994-11-24 2004-03-15 オリンパス株式会社 Manufacturing method of optical thin film
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JP3713332B2 (en) * 1996-06-21 2005-11-09 同和鉱業株式会社 Single crystal copper target and manufacturing method thereof
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6001227A (en) * 1997-11-26 1999-12-14 Applied Materials, Inc. Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6423161B1 (en) * 1999-10-15 2002-07-23 Honeywell International Inc. High purity aluminum materials

Also Published As

Publication number Publication date
TW593719B (en) 2004-06-21
WO2001094660A3 (en) 2002-05-30
WO2001094660A2 (en) 2001-12-13

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