AU2001241136A1 - Method for dicing semiconductor wafer into chips - Google Patents
Method for dicing semiconductor wafer into chipsInfo
- Publication number
- AU2001241136A1 AU2001241136A1 AU2001241136A AU4113601A AU2001241136A1 AU 2001241136 A1 AU2001241136 A1 AU 2001241136A1 AU 2001241136 A AU2001241136 A AU 2001241136A AU 4113601 A AU4113601 A AU 4113601A AU 2001241136 A1 AU2001241136 A1 AU 2001241136A1
- Authority
- AU
- Australia
- Prior art keywords
- chips
- semiconductor wafer
- dicing semiconductor
- dicing
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Led Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-099895 | 2000-03-31 | ||
| JP2000099895A JP2001284290A (en) | 2000-03-31 | 2000-03-31 | Chip division method for semiconductor wafer |
| JP2000-099896 | 2000-03-31 | ||
| JP2000099896A JP2001284293A (en) | 2000-03-31 | 2000-03-31 | Chip division method for semiconductor wafer |
| PCT/JP2001/002015 WO2001075954A1 (en) | 2000-03-31 | 2001-03-14 | Method for dicing semiconductor wafer into chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001241136A1 true AU2001241136A1 (en) | 2001-10-15 |
Family
ID=26589285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001241136A Abandoned AU2001241136A1 (en) | 2000-03-31 | 2001-03-14 | Method for dicing semiconductor wafer into chips |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7121925B2 (en) |
| AU (1) | AU2001241136A1 (en) |
| TW (2) | TWI257711B (en) |
| WO (1) | WO2001075954A1 (en) |
Families Citing this family (59)
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| JP2004168584A (en) * | 2002-11-19 | 2004-06-17 | Thk Co Ltd | Method for cutting glass substrate material |
| US6825559B2 (en) | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
| JP2005064231A (en) * | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | How to divide a plate |
| US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
| US7041579B2 (en) * | 2003-10-22 | 2006-05-09 | Northrop Grumman Corporation | Hard substrate wafer sawing process |
| JP4320676B2 (en) * | 2004-03-31 | 2009-08-26 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| JP4653447B2 (en) * | 2004-09-09 | 2011-03-16 | Ｏｋｉセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
| US7217583B2 (en) | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US7884447B2 (en) * | 2005-07-11 | 2011-02-08 | Cree, Inc. | Laser diode orientation on mis-cut substrates |
| JP4731241B2 (en) * | 2005-08-02 | 2011-07-20 | 株式会社ディスコ | Wafer division method |
| KR100868593B1 (en) * | 2005-12-06 | 2008-11-13 | 야마하 가부시키가이샤 | Semiconductor device and manufacturing method thereof |
| JP2007165789A (en) * | 2005-12-16 | 2007-06-28 | Olympus Corp | Method for manufacturing semiconductor device |
| US8337071B2 (en) | 2005-12-21 | 2012-12-25 | Cree, Inc. | Lighting device |
| US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
| US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
| US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
| US7666689B2 (en) * | 2006-12-12 | 2010-02-23 | International Business Machines Corporation | Method to remove circuit patterns from a wafer |
| JP4345808B2 (en) * | 2006-12-15 | 2009-10-14 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
| US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
| US20080280146A1 (en) * | 2007-05-11 | 2008-11-13 | Atomic Energy Council - Institute Of Nuclear Energy Research | Pre-cut wafer structure with heat stress effect suppressed |
| US10505083B2 (en) | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
| US20090241329A1 (en) * | 2008-03-28 | 2009-10-01 | Utac Thai Limited | Side rail remover |
| US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
| US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
| JP4818464B2 (en) * | 2009-07-30 | 2011-11-16 | キヤノン株式会社 | Microstructure manufacturing method |
| JP2012009767A (en) * | 2009-11-27 | 2012-01-12 | Kyocera Corp | Multi-piece wiring board, method of manufacturing same, wiring board, and method of manufacturing same |
| TWI438160B (en) * | 2010-07-14 | 2014-05-21 | Hon Hai Prec Ind Co Ltd | Glass processing equipment |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| TWI438161B (en) * | 2010-10-12 | 2014-05-21 | Hon Hai Prec Ind Co Ltd | Glass processing equipment |
| CN103000768A (en) * | 2011-09-09 | 2013-03-27 | 展晶科技(深圳)有限公司 | Method for manufacturing light emitting diode packaging structure |
| US8697463B2 (en) * | 2012-01-26 | 2014-04-15 | Epistar Corporation | Manufacturing method of a light-emitting device |
| US9368404B2 (en) * | 2012-09-28 | 2016-06-14 | Plasma-Therm Llc | Method for dicing a substrate with back metal |
| US10211175B2 (en) * | 2012-11-30 | 2019-02-19 | International Business Machines Corporation | Stress-resilient chip structure and dicing process |
| JP5637333B1 (en) | 2013-07-01 | 2014-12-10 | 富士ゼロックス株式会社 | Semiconductor piece manufacturing method, circuit board and electronic device including semiconductor piece, and substrate dicing method |
| JP5686220B2 (en) * | 2013-07-01 | 2015-03-18 | 富士ゼロックス株式会社 | Manufacturing method of semiconductor piece |
| JP2015088512A (en) * | 2013-10-28 | 2015-05-07 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| KR102306517B1 (en) | 2013-10-29 | 2021-10-01 | 루미리즈 홀딩 비.브이. | Separating a wafer of light emitting devices |
| US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
| US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
| JP2016096321A (en) * | 2014-11-10 | 2016-05-26 | 富士ゼロックス株式会社 | Semiconductor chip manufacturing condition setting method, and manufacturing method and manufacturing system of semiconductor chip |
| US9627259B2 (en) | 2014-11-14 | 2017-04-18 | Kabushiki Kaisha Toshiba | Device manufacturing method and device |
| KR20160057966A (en) | 2014-11-14 | 2016-05-24 | 가부시끼가이샤 도시바 | Processing apparatus, nozzle and dicing apparatus |
| CN104465901B (en) * | 2014-12-11 | 2017-03-01 | 北京工业大学 | A kind of blue laser Cavity surface or the preparation method in LED chamber face |
| JP6305355B2 (en) | 2015-01-28 | 2018-04-04 | 株式会社東芝 | Device manufacturing method |
| US10163709B2 (en) | 2015-02-13 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| JP6545511B2 (en) | 2015-04-10 | 2019-07-17 | 株式会社東芝 | Processing unit |
| US10535554B2 (en) * | 2016-12-14 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor die having edge with multiple gradients and method for forming the same |
| TWI790473B (en) * | 2020-08-28 | 2023-01-21 | 態金材料科技股份有限公司 | Method of Cutting with Metallic Glass Particle Beam |
| CN112630048B (en) * | 2020-11-20 | 2023-04-18 | 长江存储科技有限责任公司 | Strength measuring method and sample |
| CN113345838B (en) * | 2021-08-05 | 2021-11-12 | 度亘激光技术（苏州）有限公司 | Semiconductor device cleavage method |
| US11780054B2 (en) * | 2021-08-18 | 2023-10-10 | Taichi Metal Material Technology Co., Ltd. | Cutting method by using particle beam of metallic glass |
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| JPS5488767A (en) | 1977-12-24 | 1979-07-14 | Nec Home Electronics Ltd | Manufacture for semiconductor element |
| JPS5583236A (en) | 1978-12-20 | 1980-06-23 | Hitachi Ltd | Cutting method for semiconductor wafer |
| JPS5648148A (en) | 1979-09-27 | 1981-05-01 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JP2683811B2 (en) | 1988-08-04 | 1997-12-03 | 日本インター株式会社 | Masking tape and method for manufacturing semiconductor device using the same |
| US5197234A (en) * | 1990-02-27 | 1993-03-30 | Gillenwater R Lee | Abrasive engraving process |
| US5989689A (en) * | 1991-12-11 | 1999-11-23 | The Chromaline Corporation | Sandblast mask laminate with blastable pressure sensitive adhesive |
| JP2859478B2 (en) | 1991-12-12 | 1999-02-17 | 日亜化学工業 株式会社 | Gallium nitride based compound semiconductor wafer cutting method for light emitting device |
| JP2765644B2 (en) | 1992-05-09 | 1998-06-18 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor wafer cutting method |
| JP2914014B2 (en) | 1992-06-05 | 1999-06-28 | 日亜化学工業株式会社 | Method of manufacturing gallium nitride based compound semiconductor chip |
| JP2780618B2 (en) | 1993-11-06 | 1998-07-30 | 日亜化学工業株式会社 | Method of manufacturing gallium nitride based compound semiconductor chip |
| EP0658944B1 (en) * | 1993-12-14 | 2009-04-15 | Spectrolab, Inc. | Thin semiconductor device and method of fabrication |
| BE1007894A3 (en) * | 1993-12-20 | 1995-11-14 | Philips Electronics Nv | Method for manufacturing a plate of non-metallic materials with a pattern of holes and / or cavities. |
| TW242695B (en) | 1994-08-18 | 1995-03-11 | Jong-Chuan Hwang | Manufacturing method for silicon wafer |
| TW293135B (en) | 1995-11-23 | 1996-12-11 | Ind Tech Res Inst | Process of fabricating field emission display spacer |
| JP3239774B2 (en) | 1996-09-20 | 2001-12-17 | 豊田合成株式会社 | Substrate separation method for group III nitride semiconductor light emitting device |
| JP2861991B2 (en) | 1997-10-20 | 1999-02-24 | 日亜化学工業株式会社 | Method of manufacturing gallium nitride based compound semiconductor chip |
| JP3395620B2 (en) * | 1997-12-16 | 2003-04-14 | 日亜化学工業株式会社 | Semiconductor light emitting device and method of manufacturing the same |
| JP3723347B2 (en) | 1998-06-04 | 2005-12-07 | ローム株式会社 | Manufacturing method of semiconductor light emitting device |
| JP3702700B2 (en) | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Group III nitride compound semiconductor device and method for manufacturing the same |
| US6528393B2 (en) * | 2000-06-13 | 2003-03-04 | Advanced Semiconductor Engineering, Inc. | Method of making a semiconductor package by dicing a wafer from the backside surface thereof |
-
2001
- 2001-03-14 AU AU2001241136A patent/AU2001241136A1/en not_active Abandoned
- 2001-03-14 TW TW090105930A patent/TWI257711B/en not_active IP Right Cessation
- 2001-03-14 TW TW094115586A patent/TW200529308A/en not_active IP Right Cessation
- 2001-03-14 WO PCT/JP2001/002015 patent/WO2001075954A1/en not_active Ceased
- 2001-03-14 US US10/240,251 patent/US7121925B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20030121511A1 (en) | 2003-07-03 |
| TWI295075B (en) | 2008-03-21 |
| US7121925B2 (en) | 2006-10-17 |
| TW200529308A (en) | 2005-09-01 |
| WO2001075954A1 (en) | 2001-10-11 |
| TWI257711B (en) | 2006-07-01 |
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