ATE549753T1 - Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungen - Google Patents
Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungenInfo
- Publication number
- ATE549753T1 ATE549753T1 AT00950480T AT00950480T ATE549753T1 AT E549753 T1 ATE549753 T1 AT E549753T1 AT 00950480 T AT00950480 T AT 00950480T AT 00950480 T AT00950480 T AT 00950480T AT E549753 T1 ATE549753 T1 AT E549753T1
- Authority
- AT
- Austria
- Prior art keywords
- organic
- layer
- providing
- organic semiconductor
- semiconductor layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14494399P | 1999-07-21 | 1999-07-21 | |
| US14798999P | 1999-08-10 | 1999-08-10 | |
| PCT/US2000/019810 WO2001008241A1 (en) | 1999-07-21 | 2000-07-21 | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE549753T1 true ATE549753T1 (de) | 2012-03-15 |
Family
ID=26842515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00950480T ATE549753T1 (de) | 1999-07-21 | 2000-07-21 | Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungen |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1198851B1 (de) |
| JP (2) | JP5208341B2 (de) |
| AT (1) | ATE549753T1 (de) |
| AU (1) | AU6358000A (de) |
| WO (1) | WO2001008241A1 (de) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7023420B2 (en) | 2000-11-29 | 2006-04-04 | E Ink Corporation | Electronic display with photo-addressing means |
| US7327511B2 (en) | 2004-03-23 | 2008-02-05 | E Ink Corporation | Light modulators |
| US6866760B2 (en) | 1998-08-27 | 2005-03-15 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
| US7012600B2 (en) | 1999-04-30 | 2006-03-14 | E Ink Corporation | Methods for driving bistable electro-optic displays, and apparatus for use therein |
| GB0016660D0 (en) * | 2000-07-06 | 2000-08-23 | Cambridge Display Tech Ltd | Method of producing an organic light-emitting device |
| DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
| DE10061297C2 (de) | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
| DE10061299A1 (de) | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
| DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
| AU2002250304A1 (en) | 2001-03-13 | 2002-09-24 | E Ink Corporation | Apparatus for displaying drawings |
| KR100824249B1 (ko) | 2001-04-02 | 2008-04-24 | 이 잉크 코포레이션 | 화상 안정도가 개선된 전기영동 매체를 포함하는 전기영동 디스플레이 |
| US6580545B2 (en) | 2001-04-19 | 2003-06-17 | E Ink Corporation | Electrochromic-nanoparticle displays |
| EP1393122B1 (de) * | 2001-05-15 | 2018-03-28 | E Ink Corporation | Elektrophoretische partikel |
| WO2002093245A1 (en) | 2001-05-15 | 2002-11-21 | E Ink Corporation | Electrophoretic displays containing magnetic particles |
| US6982178B2 (en) | 2002-06-10 | 2006-01-03 | E Ink Corporation | Components and methods for use in electro-optic displays |
| DE10151036A1 (de) | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| DE10151440C1 (de) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
| CN102789758B (zh) | 2001-11-20 | 2016-05-18 | 伊英克公司 | 驱动双稳态电光显示器的方法 |
| US6885032B2 (en) | 2001-11-21 | 2005-04-26 | Visible Tech-Knowledgy, Inc. | Display assembly having flexible transistors on a flexible substrate |
| DE10160732A1 (de) | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
| US6950220B2 (en) | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
| DE10212640B4 (de) | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
| US7223672B2 (en) | 2002-04-24 | 2007-05-29 | E Ink Corporation | Processes for forming backplanes for electro-optic displays |
| JP4651383B2 (ja) | 2002-06-13 | 2011-03-16 | イー インク コーポレイション | 電気光学表示装置の駆動の方法 |
| ATE355566T1 (de) | 2002-08-23 | 2006-03-15 | Polyic Gmbh & Co Kg | Organisches bauelement zum überspannungsschutz und dazugehörige schaltung |
| EP1552337B1 (de) | 2002-09-03 | 2016-04-27 | E Ink Corporation | Elektrooptische anzeigen |
| WO2004032257A2 (de) | 2002-10-02 | 2004-04-15 | Leonhard Kurz Gmbh & Co. Kg | Folie mit organischen halbleitern |
| DE10253154A1 (de) | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
| DE50306538D1 (de) | 2002-11-19 | 2007-03-29 | Polyic Gmbh & Co Kg | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
| EP1573389B1 (de) | 2002-12-16 | 2018-05-30 | E Ink Corporation | Rückseitenplatten für elektrooptische anzeigen |
| DE10302149A1 (de) | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
| ATE358895T1 (de) * | 2003-03-07 | 2007-04-15 | Koninkl Philips Electronics Nv | Verfahren zur herstellung einer elektronischen anordung |
| WO2004088395A2 (en) | 2003-03-27 | 2004-10-14 | E Ink Corporation | Electro-optic assemblies |
| US7297621B2 (en) | 2003-04-15 | 2007-11-20 | California Institute Of Technology | Flexible carbon-based ohmic contacts for organic transistors |
| EP1639574B1 (de) | 2003-06-30 | 2015-04-22 | E Ink Corporation | Verfahren zum antreiben elektro-optischer anzeigen |
| WO2005015959A1 (de) * | 2003-08-05 | 2005-02-17 | Technische Universität Braunschweig Carolo-Wilhelmina | Verwendung einer schicht aus hydrophoben, linear oder zweidimensional polyzyklischen aromaten als sperrschicht oder kapselung und mit einer derartigen schicht aufgebaute elektrische bauelemente mit organischen polymeren |
| US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
| WO2005020199A2 (en) | 2003-08-19 | 2005-03-03 | E Ink Corporation | Methods for controlling electro-optic displays |
| DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
| DE10340644B4 (de) | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
| CN101142510B (zh) | 2003-11-05 | 2010-04-14 | 伊英克公司 | 电光显示器 |
| JP4790622B2 (ja) | 2003-11-26 | 2011-10-12 | イー インク コーポレイション | 低残留電圧の電気光学ディスプレイ |
| KR101039024B1 (ko) | 2004-06-14 | 2011-06-03 | 삼성전자주식회사 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
| JP4815765B2 (ja) * | 2004-07-29 | 2011-11-16 | ソニー株式会社 | 有機半導体装置の製造方法 |
| WO2006025473A1 (en) | 2004-08-31 | 2006-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| GB0424342D0 (en) * | 2004-11-03 | 2004-12-08 | Avecia Ltd | Process and device |
| KR100670255B1 (ko) * | 2004-12-23 | 2007-01-16 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 구비한 평판표시장치, 상기 박막트랜지스터의 제조방법, 및 상기 평판 표시장치의 제조방법 |
| DE102005009820A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
| JP2007123620A (ja) * | 2005-10-28 | 2007-05-17 | Ricoh Co Ltd | 有機半導体装置及びその製造方法、並びにアクティブマトリクス表示装置 |
| ES2566753T3 (es) * | 2008-03-31 | 2016-04-15 | Shiseido Company, Ltd. | Polisiloxano, compuesto acrílico y compuesto vinílico |
| GB2487150A (en) | 2009-09-05 | 2012-07-11 | Merck Patent Gmbh | Solution processable passivation layers for organic electronic devices |
| JP6043693B2 (ja) | 2012-10-19 | 2016-12-14 | 富士フイルム株式会社 | 保護膜形成用の樹脂組成物、保護膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス |
| CN114122258B (zh) * | 2021-11-16 | 2025-05-13 | 苏州科技大学 | 一种天青石蓝薄膜复合材料及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58107638A (ja) * | 1981-12-21 | 1983-06-27 | Nippon Telegr & Teleph Corp <Ntt> | 高分子半導体の表面絶縁化方法 |
| US5250388A (en) * | 1988-05-31 | 1993-10-05 | Westinghouse Electric Corp. | Production of highly conductive polymers for electronic circuits |
| JPH0346212A (ja) * | 1989-07-13 | 1991-02-27 | Omron Corp | コンデンサ |
| JP3224829B2 (ja) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
| JPH05206112A (ja) * | 1992-01-30 | 1993-08-13 | Sharp Corp | 半導体膜改質方法およびｔｆｔ作製方法 |
| JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
| US5753523A (en) * | 1994-11-21 | 1998-05-19 | Brewer Science, Inc. | Method for making airbridge from ion-implanted conductive polymers |
| JPH0983040A (ja) * | 1995-09-12 | 1997-03-28 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
| US5965280A (en) * | 1997-03-03 | 1999-10-12 | Hewlett-Packard Company | Patterned polymer electroluminescent devices based on microlithographic processes |
-
2000
- 2000-07-21 EP EP00950480A patent/EP1198851B1/de not_active Expired - Lifetime
- 2000-07-21 JP JP2001512653A patent/JP5208341B2/ja not_active Expired - Fee Related
- 2000-07-21 AT AT00950480T patent/ATE549753T1/de active
- 2000-07-21 AU AU63580/00A patent/AU6358000A/en not_active Abandoned
- 2000-07-21 WO PCT/US2000/019810 patent/WO2001008241A1/en not_active Ceased
-
2011
- 2011-09-27 JP JP2011211002A patent/JP5677257B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5677257B2 (ja) | 2015-02-25 |
| EP1198851B1 (de) | 2012-03-14 |
| JP2011258995A (ja) | 2011-12-22 |
| EP1198851A1 (de) | 2002-04-24 |
| JP2003525521A (ja) | 2003-08-26 |
| AU6358000A (en) | 2001-02-13 |
| WO2001008241A1 (en) | 2001-02-01 |
| JP5208341B2 (ja) | 2013-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE549753T1 (de) | Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungen | |
| WO2003016599A1 (en) | Organic semiconductor element | |
| TW335456B (en) | LCD device | |
| ES2282708T3 (es) | Componente electronico organico con capa funcional semiconductora estructurada y metodo para producir el mismo. | |
| EP1596637A4 (de) | Organisches el-element und herstellungsverfahren dafür | |
| TW200503183A (en) | Planar polymer memory device | |
| BR9006718A (pt) | Dispositivo eletroluminescente,matriz de dispositivos eletroluminescentes,processo para sua fabricacao e equipamento | |
| KR20050084075A (ko) | 패시베이션 어플리케이션을 위한 저온 프로세스 | |
| ES2186676T3 (es) | Estructuras electrocromas y procedimientos. | |
| KR970007965B1 (en) | Structure and fabrication method of tft | |
| TW357461B (en) | Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors | |
| TW200518624A (en) | Organic electro luminescence device and fabrication method thereof | |
| TW351861B (en) | Semiconductor device and manufacturing process thereof | |
| KR950034833A (ko) | 반도체 소자의 콘트롤 게이트 전극 형성방법 | |
| EP1523050A3 (de) | Organischer Dünnfilmtransistor mit verbesserter Ladungsträgermobilität durch eine Oberflächenreliefstruktur | |
| TW200705668A (en) | Thin film transistor substrate and manufacturing method thereof | |
| TW200623419A (en) | Organic thin film transistor array panel and manufacturing method thereof | |
| TW200520231A (en) | Method of forming a floating gate for a stacked gate flash memory device | |
| TW200520243A (en) | Dye sensitized solar cell electrode and solar cell having same | |
| ATE75076T1 (de) | Duennfilmtransistor und verfahren zu seiner herstellung. | |
| WO2017054407A1 (zh) | 一种薄膜晶体管、阵列基板及相关制作方法、以及显示装置 | |
| KR20100039612A (ko) | 표시 기판 및 이의 제조 방법 | |
| IT1250463B (it) | Procedimento per la fabbricazione di transistori con struttura gate -isolante -semiconduttore. | |
| JP2004303671A5 (de) | ||
| TW200507035A (en) | Semiconductor device and method of manufacturing the same |