ATE295623T1 - Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern - Google Patents
Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gitternInfo
- Publication number
- ATE295623T1 ATE295623T1 AT02787246T AT02787246T ATE295623T1 AT E295623 T1 ATE295623 T1 AT E295623T1 AT 02787246 T AT02787246 T AT 02787246T AT 02787246 T AT02787246 T AT 02787246T AT E295623 T1 ATE295623 T1 AT E295623T1
- Authority
- AT
- Austria
- Prior art keywords
- gain element
- length
- surface emitting
- elements
- grating
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000001668 ameliorated effect Effects 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002364817A CA2364817A1 (en) | 2001-11-16 | 2001-12-11 | Phase shifted surface emitting dfb laser structures with gain or absorptive gratings |
| PCT/CA2002/001893 WO2003055019A1 (en) | 2001-12-11 | 2002-12-11 | Phase shifted surface emitting dfb laser structures with gain or absorptive gratings |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE295623T1 true ATE295623T1 (de) | 2005-05-15 |
Family
ID=4170807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02787246T ATE295623T1 (de) | 2001-12-11 | 2002-12-11 | Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US20030147439A1 (de) |
| EP (1) | EP1454393B1 (de) |
| JP (1) | JP2005513803A (de) |
| KR (1) | KR20040065264A (de) |
| CN (1) | CN1689204A (de) |
| AT (1) | ATE295623T1 (de) |
| AU (1) | AU2002351571A1 (de) |
| DE (1) | DE60204168T2 (de) |
| IL (1) | IL162478A0 (de) |
| MX (1) | MXPA04005726A (de) |
| RU (1) | RU2004121153A (de) |
| WO (1) | WO2003055019A1 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040190580A1 (en) * | 2003-03-04 | 2004-09-30 | Bardia Pezeshki | High-yield high-precision distributed feedback laser based on an array |
| CN1823456A (zh) * | 2003-06-10 | 2006-08-23 | 福托纳米公司 | 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备 |
| US7649916B2 (en) * | 2004-06-30 | 2010-01-19 | Finisar Corporation | Semiconductor laser with side mode suppression |
| US7313159B2 (en) * | 2004-12-23 | 2007-12-25 | Photodigm, Inc. | Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating |
| KR100794653B1 (ko) * | 2005-12-06 | 2008-01-14 | 한국전자통신연구원 | 분포궤환형 양자점 반도체 레이저 구조물 |
| JP2007227560A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | 利得結合型分布帰還型半導体レーザ |
| GB2437784B (en) * | 2006-05-02 | 2011-05-11 | Jian-Jun He | Q-modulated semiconductor laser with electro-absorptive grating structures |
| EP2729997B1 (de) * | 2011-07-04 | 2015-12-16 | Danmarks Tekniske Universitet | Laservorrichtung |
| EP2933885B1 (de) * | 2014-04-16 | 2017-05-31 | Alcatel Lucent | Abstimmbare lichtemittierende Vorrichtung mit an einem Ringresonator angekoppelten DML |
| US11251585B2 (en) | 2019-10-01 | 2022-02-15 | Ii-Vi Delaware, Inc. | DFB with weak optical feedback |
| US20210098970A1 (en) * | 2019-10-01 | 2021-04-01 | Ii-Vi Delaware, Inc. | Isolator-free laser |
| CN112382858B (zh) * | 2020-10-23 | 2022-03-15 | 西安理工大学 | 一种基于全介质材料的光可调四频带太赫兹超材料吸收器 |
| CN112467516B (zh) * | 2020-11-11 | 2021-10-08 | 华中科技大学 | 一种面发射oam光束的分布反馈激光器及其调制方法 |
| US11876350B2 (en) | 2020-11-13 | 2024-01-16 | Ii-Vi Delaware, Inc. | Multi-wavelength VCSEL array and method of fabrication |
| CN114709714B (zh) * | 2021-08-27 | 2025-09-23 | 因林光电科技(苏州)有限公司 | 一种分布式反馈激光器及其制备方法 |
| CN114866420B (zh) * | 2022-04-28 | 2023-06-09 | 烽火通信科技股份有限公司 | 一种对波分传输系统进行优化的方法和装置 |
| CN120389286A (zh) * | 2024-01-29 | 2025-07-29 | 华为技术有限公司 | 一种激光器、激光器阵列及光学设备 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2692913B2 (ja) * | 1987-12-19 | 1997-12-17 | 株式会社東芝 | グレーティング結合型表面発光レーザ素子およびその変調方法 |
| US5727013A (en) * | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
| US5970081A (en) * | 1996-09-17 | 1999-10-19 | Kabushiki Kaisha Toshiba | Grating coupled surface emitting device |
| US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
| JPH11307856A (ja) * | 1998-04-21 | 1999-11-05 | Toshiba Corp | 分布帰還型レーザ及びその製造方法 |
| US6330265B1 (en) * | 1998-04-21 | 2001-12-11 | Kabushiki Kaisha Toshiba | Optical functional element and transmission device |
| JP3186705B2 (ja) * | 1998-08-27 | 2001-07-11 | 日本電気株式会社 | 分布帰還型半導体レーザ |
| WO2001013480A1 (en) * | 1999-08-13 | 2001-02-22 | Wisconsin Alumni Research Foundation | Single mode, single lobe surface emitting distributed feedback semiconductor laser |
| WO2001093385A2 (en) * | 2000-05-31 | 2001-12-06 | Nova Crystals, Inc. | Surface-emitting laser devices with integrated beam-shaping optics and power-monitoring detectors |
| CN1823456A (zh) * | 2003-06-10 | 2006-08-23 | 福托纳米公司 | 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备 |
-
2002
- 2002-12-11 US US10/316,676 patent/US20030147439A1/en not_active Abandoned
- 2002-12-11 WO PCT/CA2002/001893 patent/WO2003055019A1/en not_active Ceased
- 2002-12-11 AT AT02787246T patent/ATE295623T1/de not_active IP Right Cessation
- 2002-12-11 IL IL16247802A patent/IL162478A0/xx unknown
- 2002-12-11 EP EP02787246A patent/EP1454393B1/de not_active Expired - Lifetime
- 2002-12-11 MX MXPA04005726A patent/MXPA04005726A/es unknown
- 2002-12-11 CN CNA028263138A patent/CN1689204A/zh active Pending
- 2002-12-11 DE DE60204168T patent/DE60204168T2/de not_active Expired - Fee Related
- 2002-12-11 AU AU2002351571A patent/AU2002351571A1/en not_active Abandoned
- 2002-12-11 JP JP2003555632A patent/JP2005513803A/ja active Pending
- 2002-12-11 KR KR10-2004-7009131A patent/KR20040065264A/ko not_active Withdrawn
- 2002-12-11 RU RU2004121153/28A patent/RU2004121153A/ru not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE60204168D1 (de) | 2005-06-16 |
| EP1454393A1 (de) | 2004-09-08 |
| MXPA04005726A (es) | 2005-07-01 |
| WO2003055019A1 (en) | 2003-07-03 |
| US20030147439A1 (en) | 2003-08-07 |
| CN1689204A (zh) | 2005-10-26 |
| JP2005513803A (ja) | 2005-05-12 |
| DE60204168T2 (de) | 2006-01-19 |
| IL162478A0 (en) | 2005-11-20 |
| RU2004121153A (ru) | 2005-03-27 |
| EP1454393B1 (de) | 2005-05-11 |
| AU2002351571A1 (en) | 2003-07-09 |
| KR20040065264A (ko) | 2004-07-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |