NO20084314L - Process for the production of purified silicone - Google Patents
Process for the production of purified siliconeInfo
- Publication number
- NO20084314L NO20084314L NO20084314A NO20084314A NO20084314L NO 20084314 L NO20084314 L NO 20084314L NO 20084314 A NO20084314 A NO 20084314A NO 20084314 A NO20084314 A NO 20084314A NO 20084314 L NO20084314 L NO 20084314L
- Authority
- NO
- Norway
- Prior art keywords
- solidification
- silicon
- aluminum
- aluminum concentration
- c10max
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229920001296 polysiloxane Polymers 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 238000007711 solidification Methods 0.000 abstract 4
- 230000008023 solidification Effects 0.000 abstract 4
- 238000005192 partition Methods 0.000 abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Det tilveiebringes en fremgangsmåte for fremstilling av et renset silisium ved avkutting av et råsilisiumområde, uten å bestemme aluminiumkonsentrasjonen i et direksjonelt størknet silisium. Ved fremgangsmåten ifølge oppfinnelsen oppnås en standard størkningsandel (f0) som tilfredsstiller formel (1) og formel (2) nedenfor fra det på forhånd bestemte maksimalnivå av aluminiumkonsentrasjonen (C10max), der temperaturgradienten (T) og størkningshastigheten (R) samt det direksjonelt størknede silisium kuttes som del med en størkningsandel (f) i størkningstrinnet tilsvarende f0. k = {K1 x Ln(R) + K2} x {K3 x exp[K4 x R x (K5 x C2 + K6)]} x {K7 x T + K8}-K9 der k er en koeffisient valgt fra området 0,9 til 1,1 ganger den effektive aluminiumfordelingskoeffisient k', oppnådd for å tilfredsstille den følgende ligning (2): C10max = k'x C2 x (1-f0)k'-1 der k'er en effektiv aluminiumfordelingskoeffisient og C2 er aluminiumkonsentrasjonen for utgangssilisiummaterialsmelten.A process is provided for preparing a purified silicon by cutting off a crude silicon region, without determining the aluminum concentration in a directional solidified silicon. In the process of the invention, a standard solidification proportion (f0) satisfying formula (1) and formula (2) below is obtained from the predetermined maximum level of the aluminum concentration (C10max), where the temperature gradient (T) and the solidification rate (R) as well as the direct solidified silicon is cut as part with a solidification proportion (f) in the solidification step corresponding to f0. k = {K1 x Ln (R) + K2} x {K3 x exp [K4 x R x (K5 x C2 + K6)]} x {K7 x T + K8} -K9 where k is a coefficient selected from the range 0 , 9 to 1.1 times the effective aluminum partition coefficient k ', obtained to satisfy the following equation (2): C10max = k'x C2 x (1-f0) k'-1 where k's an effective aluminum partition coefficient and C2 is the aluminum concentration of the starting silicon melt.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007269863 | 2007-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20084314L true NO20084314L (en) | 2009-04-20 |
Family
ID=40562269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20084314A NO20084314L (en) | 2007-10-17 | 2008-10-15 | Process for the production of purified silicone |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090101301A1 (en) |
| JP (1) | JP5125973B2 (en) |
| KR (1) | KR20090039627A (en) |
| CN (1) | CN101412512A (en) |
| DE (1) | DE102008052211A1 (en) |
| NO (1) | NO20084314L (en) |
| TW (1) | TW200925109A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0380566B1 (en) | 1987-10-16 | 1991-07-03 | Reinhard Fischer | Process for disposal of waste by combustion with oxygen |
| JP5309539B2 (en) * | 2007-07-12 | 2013-10-09 | 住友化学株式会社 | Method for producing purified silicon |
| NO329987B1 (en) | 2009-02-26 | 2011-01-31 | Harsharn Tathgar | Semi-Continuous Process for Formation, Separation and Melting of Large, Clean Silicon Crystals |
| TWI393805B (en) * | 2009-11-16 | 2013-04-21 | Masahiro Hoshino | Purification method of metallurgical silicon |
| WO2011068736A1 (en) * | 2009-12-01 | 2011-06-09 | Dow Corning Corporation | Rotational casting process |
| JP2012106886A (en) * | 2010-11-17 | 2012-06-07 | Nippon Steel Materials Co Ltd | Method and apparatus for solidification refining metallic silicon |
| EP2841379B1 (en) * | 2012-04-23 | 2024-10-09 | Seerstone LLC | Carbon nanotubes having a bimodal size distribution |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2508803C3 (en) * | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for the production of plate-shaped silicon crystals with a columnar structure |
| EP0869102B1 (en) * | 1996-10-14 | 2002-05-22 | Kawasaki Steel Corporation | Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell |
| JPH10182134A (en) * | 1996-10-31 | 1998-07-07 | Kawasaki Steel Corp | Silicon purification method |
| JPH10251009A (en) * | 1997-03-14 | 1998-09-22 | Kawasaki Steel Corp | Method for solidifying and refining silicon for solar cells |
| JPH10273313A (en) * | 1997-03-28 | 1998-10-13 | Kawasaki Steel Corp | Method for producing polycrystalline silicon ingot |
| JPH10273311A (en) * | 1997-03-28 | 1998-10-13 | Kawasaki Steel Corp | Method and apparatus for purifying silicon for solar cells |
| JP2004196577A (en) | 2002-12-18 | 2004-07-15 | Jfe Steel Kk | Manufacturing method of polycrystalline silicon |
| US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
| JP2006206392A (en) * | 2005-01-28 | 2006-08-10 | Nippon Steel Corp | Polycrystalline silicon purification method |
| WO2009008555A1 (en) * | 2007-07-12 | 2009-01-15 | Sumitomo Chemical Company, Limited | Method for production of purified silicon |
| JP5309539B2 (en) * | 2007-07-12 | 2013-10-09 | 住友化学株式会社 | Method for producing purified silicon |
| JP5277654B2 (en) * | 2008-02-15 | 2013-08-28 | 住友化学株式会社 | Method for producing boron-doped silicon |
-
2008
- 2008-10-14 JP JP2008264851A patent/JP5125973B2/en not_active Expired - Fee Related
- 2008-10-15 NO NO20084314A patent/NO20084314L/en not_active Application Discontinuation
- 2008-10-16 TW TW097139756A patent/TW200925109A/en unknown
- 2008-10-16 KR KR1020080101444A patent/KR20090039627A/en not_active Withdrawn
- 2008-10-16 US US12/253,022 patent/US20090101301A1/en not_active Abandoned
- 2008-10-16 CN CNA2008101703418A patent/CN101412512A/en active Pending
- 2008-10-17 DE DE102008052211A patent/DE102008052211A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW200925109A (en) | 2009-06-16 |
| CN101412512A (en) | 2009-04-22 |
| JP2009114053A (en) | 2009-05-28 |
| JP5125973B2 (en) | 2013-01-23 |
| DE102008052211A1 (en) | 2009-06-04 |
| US20090101301A1 (en) | 2009-04-23 |
| KR20090039627A (en) | 2009-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |