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NO20084314L - Process for the production of purified silicone - Google Patents

Process for the production of purified silicone

Info

Publication number
NO20084314L
NO20084314L NO20084314A NO20084314A NO20084314L NO 20084314 L NO20084314 L NO 20084314L NO 20084314 A NO20084314 A NO 20084314A NO 20084314 A NO20084314 A NO 20084314A NO 20084314 L NO20084314 L NO 20084314L
Authority
NO
Norway
Prior art keywords
solidification
silicon
aluminum
aluminum concentration
c10max
Prior art date
Application number
NO20084314A
Other languages
Norwegian (no)
Inventor
Hiroshi Tabuchi
Tomohiro Megumi
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of NO20084314L publication Critical patent/NO20084314L/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045Directionally solidified castings
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • C01B33/039Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

Det tilveiebringes en fremgangsmåte for fremstilling av et renset silisium ved avkutting av et råsilisiumområde, uten å bestemme aluminiumkonsentrasjonen i et direksjonelt størknet silisium. Ved fremgangsmåten ifølge oppfinnelsen oppnås en standard størkningsandel (f0) som tilfredsstiller formel (1) og formel (2) nedenfor fra det på forhånd bestemte maksimalnivå av aluminiumkonsentrasjonen (C10max), der temperaturgradienten (T) og størkningshastigheten (R) samt det direksjonelt størknede silisium kuttes som del med en størkningsandel (f) i størkningstrinnet tilsvarende f0. k = {K1 x Ln(R) + K2} x {K3 x exp[K4 x R x (K5 x C2 + K6)]} x {K7 x T + K8}-K9 der k er en koeffisient valgt fra området 0,9 til 1,1 ganger den effektive aluminiumfordelingskoeffisient k', oppnådd for å tilfredsstille den følgende ligning (2): C10max = k'x C2 x (1-f0)k'-1 der k'er en effektiv aluminiumfordelingskoeffisient og C2 er aluminiumkonsentrasjonen for utgangssilisiummaterialsmelten.A process is provided for preparing a purified silicon by cutting off a crude silicon region, without determining the aluminum concentration in a directional solidified silicon. In the process of the invention, a standard solidification proportion (f0) satisfying formula (1) and formula (2) below is obtained from the predetermined maximum level of the aluminum concentration (C10max), where the temperature gradient (T) and the solidification rate (R) as well as the direct solidified silicon is cut as part with a solidification proportion (f) in the solidification step corresponding to f0. k = {K1 x Ln (R) + K2} x {K3 x exp [K4 x R x (K5 x C2 + K6)]} x {K7 x T + K8} -K9 where k is a coefficient selected from the range 0 , 9 to 1.1 times the effective aluminum partition coefficient k ', obtained to satisfy the following equation (2): C10max = k'x C2 x (1-f0) k'-1 where k's an effective aluminum partition coefficient and C2 is the aluminum concentration of the starting silicon melt.

NO20084314A 2007-10-17 2008-10-15 Process for the production of purified silicone NO20084314L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007269863 2007-10-17

Publications (1)

Publication Number Publication Date
NO20084314L true NO20084314L (en) 2009-04-20

Family

ID=40562269

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084314A NO20084314L (en) 2007-10-17 2008-10-15 Process for the production of purified silicone

Country Status (7)

Country Link
US (1) US20090101301A1 (en)
JP (1) JP5125973B2 (en)
KR (1) KR20090039627A (en)
CN (1) CN101412512A (en)
DE (1) DE102008052211A1 (en)
NO (1) NO20084314L (en)
TW (1) TW200925109A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0380566B1 (en) 1987-10-16 1991-07-03 Reinhard Fischer Process for disposal of waste by combustion with oxygen
JP5309539B2 (en) * 2007-07-12 2013-10-09 住友化学株式会社 Method for producing purified silicon
NO329987B1 (en) 2009-02-26 2011-01-31 Harsharn Tathgar Semi-Continuous Process for Formation, Separation and Melting of Large, Clean Silicon Crystals
TWI393805B (en) * 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
WO2011068736A1 (en) * 2009-12-01 2011-06-09 Dow Corning Corporation Rotational casting process
JP2012106886A (en) * 2010-11-17 2012-06-07 Nippon Steel Materials Co Ltd Method and apparatus for solidification refining metallic silicon
EP2841379B1 (en) * 2012-04-23 2024-10-09 Seerstone LLC Carbon nanotubes having a bimodal size distribution

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2508803C3 (en) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of plate-shaped silicon crystals with a columnar structure
EP0869102B1 (en) * 1996-10-14 2002-05-22 Kawasaki Steel Corporation Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell
JPH10182134A (en) * 1996-10-31 1998-07-07 Kawasaki Steel Corp Silicon purification method
JPH10251009A (en) * 1997-03-14 1998-09-22 Kawasaki Steel Corp Method for solidifying and refining silicon for solar cells
JPH10273313A (en) * 1997-03-28 1998-10-13 Kawasaki Steel Corp Method for producing polycrystalline silicon ingot
JPH10273311A (en) * 1997-03-28 1998-10-13 Kawasaki Steel Corp Method and apparatus for purifying silicon for solar cells
JP2004196577A (en) 2002-12-18 2004-07-15 Jfe Steel Kk Manufacturing method of polycrystalline silicon
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
JP2006206392A (en) * 2005-01-28 2006-08-10 Nippon Steel Corp Polycrystalline silicon purification method
WO2009008555A1 (en) * 2007-07-12 2009-01-15 Sumitomo Chemical Company, Limited Method for production of purified silicon
JP5309539B2 (en) * 2007-07-12 2013-10-09 住友化学株式会社 Method for producing purified silicon
JP5277654B2 (en) * 2008-02-15 2013-08-28 住友化学株式会社 Method for producing boron-doped silicon

Also Published As

Publication number Publication date
TW200925109A (en) 2009-06-16
CN101412512A (en) 2009-04-22
JP2009114053A (en) 2009-05-28
JP5125973B2 (en) 2013-01-23
DE102008052211A1 (en) 2009-06-04
US20090101301A1 (en) 2009-04-23
KR20090039627A (en) 2009-04-22

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