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NO20081386L - Method for texturing silicon surfaces and wafers thereof - Google Patents

Method for texturing silicon surfaces and wafers thereof

Info

Publication number
NO20081386L
NO20081386L NO20081386A NO20081386A NO20081386L NO 20081386 L NO20081386 L NO 20081386L NO 20081386 A NO20081386 A NO 20081386A NO 20081386 A NO20081386 A NO 20081386A NO 20081386 L NO20081386 L NO 20081386L
Authority
NO
Norway
Prior art keywords
wafers
silicon surfaces
texturing
texturing silicon
silicon
Prior art date
Application number
NO20081386A
Other languages
English (en)
Inventor
Ingemar Olefjord
Timothy C Lommasson
Original Assignee
Rec Solar As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rec Solar As filed Critical Rec Solar As
Priority to NO20081386A priority Critical patent/NO20081386L/no
Priority to CA2718397A priority patent/CA2718397C/en
Priority to KR1020107022983A priority patent/KR101300074B1/ko
Priority to US12/922,349 priority patent/US8658544B2/en
Priority to EP09720505A priority patent/EP2266142A2/en
Priority to CN200980117261.9A priority patent/CN102113123B/zh
Priority to RU2010143337/28A priority patent/RU2474008C2/ru
Priority to JP2010550624A priority patent/JP5172975B2/ja
Priority to PCT/NO2009/000092 priority patent/WO2009113874A2/en
Publication of NO20081386L publication Critical patent/NO20081386L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Denne oppfinnelsen gjelder en fremgangsmåte for teksturering av en silisiumoverflate og silisiumwafere laget med fremgangsmåten, hvor fremgangsmåten omfatter nedsenking av waferene i en alkalisk løsning med pH> 10, og å påføre potensialforskjell mellom waferen og en platinaelektrode i elektrolytten i området fra +10 til +85 V.
NO20081386A 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof NO20081386L (no)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NO20081386A NO20081386L (no) 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof
CA2718397A CA2718397C (en) 2008-03-14 2009-03-12 Method for texturing silicon surfaces and wafers thereof
KR1020107022983A KR101300074B1 (ko) 2008-03-14 2009-03-12 실리콘 표면을 텍스쳐링 하는 방법 및 그에 의한 웨이퍼
US12/922,349 US8658544B2 (en) 2008-03-14 2009-03-12 Method for texturing silicon surfaces and wafers thereof
EP09720505A EP2266142A2 (en) 2008-03-14 2009-03-12 Method for texturing silicon surfaces and wafers thereof
CN200980117261.9A CN102113123B (zh) 2008-03-14 2009-03-12 织构化硅表面的方法及由该方法制造的晶片
RU2010143337/28A RU2474008C2 (ru) 2008-03-14 2009-03-12 Способ текстурирования кремниевых поверхностей
JP2010550624A JP5172975B2 (ja) 2008-03-14 2009-03-12 シリコン表面をテクスチャ処理するための方法および該方法によって製造されたウェハ
PCT/NO2009/000092 WO2009113874A2 (en) 2008-03-14 2009-03-12 Method for texturing silicon surfaces and wafers thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20081386A NO20081386L (no) 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof

Publications (1)

Publication Number Publication Date
NO20081386L true NO20081386L (no) 2009-09-15

Family

ID=41065685

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20081386A NO20081386L (no) 2008-03-14 2008-03-14 Method for texturing silicon surfaces and wafers thereof

Country Status (9)

Country Link
US (1) US8658544B2 (no)
EP (1) EP2266142A2 (no)
JP (1) JP5172975B2 (no)
KR (1) KR101300074B1 (no)
CN (1) CN102113123B (no)
CA (1) CA2718397C (no)
NO (1) NO20081386L (no)
RU (1) RU2474008C2 (no)
WO (1) WO2009113874A2 (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102356454B (zh) * 2009-03-31 2014-03-26 栗田工业株式会社 蚀刻液的处理装置以及处理方法
EP2463410B1 (en) * 2010-12-13 2018-07-04 Rohm and Haas Electronic Materials LLC Electrochemical etching of semiconductors
JP5909671B2 (ja) * 2012-03-27 2016-04-27 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び半導体材料からなる基板の製造方法
CN102730631B (zh) * 2012-07-10 2015-05-20 西南交通大学 一种多点接触模式下的大面积硅表面织构化加工方法
RU2600076C1 (ru) * 2015-07-08 2016-10-20 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Способ получения светопоглощающей кремниевой структуры
CN111146313B (zh) * 2019-03-08 2024-06-14 欧浦登（顺昌）光学有限公司 晶硅片微纳浊透复合绒面的制备方法及其应用
CN111524985A (zh) * 2020-04-28 2020-08-11 中国科学院电工研究所 一种多晶硅片表面制绒的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3078219A (en) * 1958-11-03 1963-02-19 Westinghouse Electric Corp Surface treatment of silicon carbide
US5129982A (en) 1991-03-15 1992-07-14 General Motors Corporation Selective electrochemical etching
KR950003953B1 (ko) * 1992-08-14 1995-04-21 주식회사금성사 태양전지의 제조방법
JPH0766437A (ja) * 1993-08-30 1995-03-10 Tonen Corp 光電変換装置用基板の製造方法
US5445718A (en) 1994-01-24 1995-08-29 General Motors Corporation Electrochemical etch-stop on n-type silicon by injecting holes from a shallow p-type layer
US5949118A (en) * 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
CN1235271C (zh) * 1995-10-17 2006-01-04 佳能株式会社 生产半导体器件的工艺
US6284670B1 (en) * 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
JP3602323B2 (ja) * 1998-01-30 2004-12-15 三菱電機株式会社 太陽電池の製造方法
RU2139601C1 (ru) * 1998-12-04 1999-10-10 ООО Научно-производственная фирма "Кварк" Способ изготовления солнечного элемента с n+-p-p+ структурой
RU2210142C1 (ru) * 2002-04-17 2003-08-10 Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" Способ изготовления солнечного элемента с n+-p-p+ структурой
US20050148198A1 (en) * 2004-01-05 2005-07-07 Technion Research & Development Foundation Ltd. Texturing a semiconductor material using negative potential dissolution (NPD)
US7494936B2 (en) 2005-05-16 2009-02-24 Technion Research & Development Foundation Ltd. Method for electrochemical etching of semiconductor material using positive potential dissolution (PPD) in solutions free from hydrogen fluoride (HF)
EP1890338B1 (de) * 2006-08-19 2011-06-22 Universität Konstanz Verfahren zum Texturieren von Siliziumwafern zur Herstellung von Solarzellen
CN101271775B (zh) * 2008-04-30 2010-09-08 天津大学 一种铂合金电极及其制备方法

Also Published As

Publication number Publication date
KR20100133434A (ko) 2010-12-21
JP5172975B2 (ja) 2013-03-27
KR101300074B1 (ko) 2013-08-30
RU2474008C2 (ru) 2013-01-27
EP2266142A2 (en) 2010-12-29
CA2718397C (en) 2015-11-24
WO2009113874A2 (en) 2009-09-17
WO2009113874A3 (en) 2010-07-08
CA2718397A1 (en) 2009-09-17
JP2011515576A (ja) 2011-05-19
US20110059618A1 (en) 2011-03-10
CN102113123A (zh) 2011-06-29
US8658544B2 (en) 2014-02-25
CN102113123B (zh) 2014-06-18
RU2010143337A (ru) 2012-04-20

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Legal Events

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