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NO20071762L - Fremgangsmate og reaktor for produksjon av hoyrent silisium - Google Patents

Fremgangsmate og reaktor for produksjon av hoyrent silisium

Info

Publication number
NO20071762L
NO20071762L NO20071762A NO20071762A NO20071762L NO 20071762 L NO20071762 L NO 20071762L NO 20071762 A NO20071762 A NO 20071762A NO 20071762 A NO20071762 A NO 20071762A NO 20071762 L NO20071762 L NO 20071762L
Authority
NO
Norway
Prior art keywords
sicl4
zncl2
reduction
molten salt
during
Prior art date
Application number
NO20071762A
Other languages
English (en)
Norwegian (no)
Inventor
Christian Rosenkilde
Original Assignee
Norsk Hydro As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norsk Hydro As filed Critical Norsk Hydro As
Priority to NO20071762A priority Critical patent/NO20071762L/no
Priority to JP2010502048A priority patent/JP2010523454A/ja
Priority to KR1020097021791A priority patent/KR20100015694A/ko
Priority to CA002680848A priority patent/CA2680848A1/fr
Priority to PCT/NO2008/000097 priority patent/WO2008120994A1/fr
Priority to EP08723987A priority patent/EP2142475A4/fr
Priority to CN200880015536A priority patent/CN101679043A/zh
Priority to EA200970900A priority patent/EA015760B1/ru
Priority to US12/450,616 priority patent/US20110176986A1/en
Priority to TW097109437A priority patent/TW200844049A/zh
Publication of NO20071762L publication Critical patent/NO20071762L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/04—Halides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
    • C25C3/34—Electrolytic production, recovery or refining of metals by electrolysis of melts of metals not provided for in groups C25C3/02 - C25C3/32

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
NO20071762A 2007-04-02 2007-04-02 Fremgangsmate og reaktor for produksjon av hoyrent silisium NO20071762L (no)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NO20071762A NO20071762L (no) 2007-04-02 2007-04-02 Fremgangsmate og reaktor for produksjon av hoyrent silisium
JP2010502048A JP2010523454A (ja) 2007-04-02 2008-02-14 高純度シリコンを製造する方法及びリアクタ
KR1020097021791A KR20100015694A (ko) 2007-04-02 2008-03-14 고순도 실리콘 제조 방법 및 고순도 실리콘 제조용 리액터
CA002680848A CA2680848A1 (fr) 2007-04-02 2008-03-14 Procede et reacteur de fabrication de silicium haute purete
PCT/NO2008/000097 WO2008120994A1 (fr) 2007-04-02 2008-03-14 Procédé et réacteur de fabrication de silicium haute pureté
EP08723987A EP2142475A4 (fr) 2007-04-02 2008-03-14 Procédé et réacteur de fabrication de silicium haute pureté
CN200880015536A CN101679043A (zh) 2007-04-02 2008-03-14 生产高纯硅的方法和反应器
EA200970900A EA015760B1 (ru) 2007-04-02 2008-03-14 Способ и реактор для получения высокочистого кремния
US12/450,616 US20110176986A1 (en) 2007-04-02 2008-03-14 Method and a reactor for production of high-purity silicon
TW097109437A TW200844049A (en) 2007-04-02 2008-03-18 A method and a reactor for production of high-purity silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20071762A NO20071762L (no) 2007-04-02 2007-04-02 Fremgangsmate og reaktor for produksjon av hoyrent silisium

Publications (1)

Publication Number Publication Date
NO20071762L true NO20071762L (no) 2008-10-03

Family

ID=39808492

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20071762A NO20071762L (no) 2007-04-02 2007-04-02 Fremgangsmate og reaktor for produksjon av hoyrent silisium

Country Status (10)

Country Link
US (1) US20110176986A1 (fr)
EP (1) EP2142475A4 (fr)
JP (1) JP2010523454A (fr)
KR (1) KR20100015694A (fr)
CN (1) CN101679043A (fr)
CA (1) CA2680848A1 (fr)
EA (1) EA015760B1 (fr)
NO (1) NO20071762L (fr)
TW (1) TW200844049A (fr)
WO (1) WO2008120994A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
EP2415711A1 (fr) 2010-08-05 2012-02-08 Hycore ANS Procédé et appareil pour la préparation et la récupération de silicium à pureté élevée
US9862612B2 (en) 2012-06-20 2018-01-09 Sumitomo Electric Industries, Ltd. Method for producing silicon metal and porous carbon
CN102923747A (zh) * 2012-11-28 2013-02-13 东北大学 一种利用煤矸石生产氯化铝、氯化硅和氯化铁的方法
CN103143308B (zh) * 2013-01-29 2014-12-24 中国科学院上海应用物理研究所 反应器及包括其的反应系统和其内衬的制造方法
CN104332620A (zh) * 2014-08-26 2015-02-04 中国科学技术大学先进技术研究院 一种水热反应合成硅纳米粉的方法及其应用
CN104528728A (zh) * 2014-12-03 2015-04-22 中国科学技术大学 一种以四氯化硅为原料合成硅纳米粉的方法及其应用
CN119898770B (zh) * 2025-02-14 2025-10-28 中国五环工程有限公司 四氯化硅冷氢化生产三氯氢硅的工艺方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3844856B2 (ja) * 1997-09-11 2006-11-15 住友チタニウム株式会社 高純度シリコンの製造方法
JP2003034519A (ja) * 2001-07-18 2003-02-07 Yutaka Kamaike シリコンの製造方法
TW200700316A (en) * 2005-03-24 2007-01-01 Umicore Nv Process for the production of si by reduction of sicl4 with liquid zn
NO20071763L (no) * 2007-04-02 2008-10-03 Norsk Hydro As Fremgangsmate og reaktor for produksjon av hoyrent silisium

Also Published As

Publication number Publication date
WO2008120994A1 (fr) 2008-10-09
EP2142475A1 (fr) 2010-01-13
KR20100015694A (ko) 2010-02-12
US20110176986A1 (en) 2011-07-21
EA200970900A1 (ru) 2010-04-30
CN101679043A (zh) 2010-03-24
TW200844049A (en) 2008-11-16
JP2010523454A (ja) 2010-07-15
EP2142475A4 (fr) 2011-03-09
WO2008120994A8 (fr) 2008-12-24
EA015760B1 (ru) 2011-12-30
CA2680848A1 (fr) 2008-10-09

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Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application