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NO20011640L - Lysföler og lysfölersystem - Google Patents

Lysföler og lysfölersystem

Info

Publication number
NO20011640L
NO20011640L NO20011640A NO20011640A NO20011640L NO 20011640 L NO20011640 L NO 20011640L NO 20011640 A NO20011640 A NO 20011640A NO 20011640 A NO20011640 A NO 20011640A NO 20011640 L NO20011640 L NO 20011640L
Authority
NO
Norway
Prior art keywords
light sensor
light
incident
charge carrier
carrier generating
Prior art date
Application number
NO20011640A
Other languages
English (en)
Norwegian (no)
Other versions
NO20011640D0 (no
Inventor
Kazuhiro Sasaki
Makoto Sasaki
Yasuo Koshizuka
Original Assignee
Casio Comp Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000107468A external-priority patent/JP4154555B2/ja
Priority claimed from JP2000122157A external-priority patent/JP3951088B2/ja
Priority claimed from JP2000163303A external-priority patent/JP3674942B2/ja
Application filed by Casio Comp Company Ltd filed Critical Casio Comp Company Ltd
Publication of NO20011640D0 publication Critical patent/NO20011640D0/no
Publication of NO20011640L publication Critical patent/NO20011640L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Air Bags (AREA)
  • Prostheses (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Burglar Alarm Systems (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Thin Film Transistor (AREA)
NO20011640A 1999-08-02 2001-03-30 Lysföler og lysfölersystem NO20011640L (no)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP21831699 1999-08-02
JP2000107468A JP4154555B2 (ja) 2000-04-10 2000-04-10 フォトセンサアレイ及び２次元画像の読取装置
JP2000122157A JP3951088B2 (ja) 2000-04-24 2000-04-24 フォトセンサアレイおよび２次元画像の読取装置
JP2000163303A JP3674942B2 (ja) 1999-08-02 2000-05-31 光電変換素子、フォトセンサアレイおよび２次元画像の読取装置
PCT/JP2000/005104 WO2001009960A1 (fr) 1999-08-02 2000-07-28 Photocapteur et systeme associe

Publications (2)

Publication Number Publication Date
NO20011640D0 NO20011640D0 (no) 2001-03-30
NO20011640L true NO20011640L (no) 2001-06-01

Family

ID=27476860

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20011640A NO20011640L (no) 1999-08-02 2001-03-30 Lysföler og lysfölersystem

Country Status (13)

Country Link
US (1) US6670595B1 (fr)
EP (1) EP1118126B1 (fr)
KR (1) KR20010075560A (fr)
CN (1) CN1316636C (fr)
AT (1) ATE424043T1 (fr)
AU (1) AU756447B2 (fr)
CA (1) CA2346032C (fr)
DE (1) DE60041627D1 (fr)
EA (1) EA003343B1 (fr)
HK (1) HK1041366B (fr)
NO (1) NO20011640L (fr)
TW (1) TW465105B (fr)
WO (1) WO2001009960A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382817B1 (ko) * 1999-01-20 2003-05-09 엘지.필립스 엘시디 주식회사 생체감지패턴 및 이를 이용한 박막트랜지스터형 광센서
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
JP4154874B2 (ja) * 2001-07-30 2008-09-24 カシオ計算機株式会社 指紋読取装置および指紋読取方法
TWI243339B (en) * 2002-03-19 2005-11-11 Casio Computer Co Ltd Image reading apparatus and drive control method
JP5157161B2 (ja) * 2006-12-27 2013-03-06 カシオ計算機株式会社 フォトセンサ
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
AT505688A1 (de) * 2007-09-13 2009-03-15 Nanoident Technologies Ag Sensormatrix aus halbleiterbauteilen
TWI354823B (en) 2007-09-17 2011-12-21 Au Optronics Corp Display device, manufacturing method thereof, cont
JP2009164543A (ja) * 2007-12-11 2009-07-23 Sony Corp 光センサ及び表示装置
KR101322137B1 (ko) * 2008-06-24 2013-10-25 엘지디스플레이 주식회사 액정표시장치
CN102509736B (zh) 2008-10-24 2015-08-19 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
JP5275515B2 (ja) * 2010-04-30 2013-08-28 シャープ株式会社 回路基板および表示装置
KR20120075971A (ko) * 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 적층형 포토다이오드 및 그 제조방법
DK3080585T3 (da) * 2013-12-10 2024-02-05 Illumina Inc Biosensorer til biologisk eller kemisk analyse og fremgangsmåder til fremstilling heraf
CN111276546B (zh) * 2020-02-20 2022-07-29 武汉华星光电技术有限公司 显示面板及其制作方法
CN115411135A (zh) * 2021-05-13 2022-11-29 北京大学深圳研究生院 一种光电探测晶体管
CN116314231A (zh) * 2023-03-31 2023-06-23 京东方科技集团股份有限公司 一种光电传感器组件及电子设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU862753A1 (ru) * 1980-04-03 1996-05-10 Запорожский индустриальный институт Фототранзистор
US4744637A (en) * 1984-10-05 1988-05-17 Canon Kabushiki Kaisha Liquid crystal device with a protective layer of a particular coefficient of expansion
US5200634A (en) * 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
DE69117785T2 (de) * 1990-03-27 1997-02-06 Canon Kk Dünnschicht-Halbleiterbauelement
US5075237A (en) * 1990-07-26 1991-12-24 Industrial Technology Research Institute Process of making a high photosensitive depletion-gate thin film transistor
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置
RU2045110C1 (ru) * 1992-03-27 1995-09-27 Валерий Александрович Болдырев Фотоприемник с ячеистой структурой
US5461419A (en) * 1992-10-16 1995-10-24 Casio Computer Co., Ltd. Photoelectric conversion system
JP3019632B2 (ja) * 1992-10-16 2000-03-13 カシオ計算機株式会社 フォトセンサシステム及びその駆動方法
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
WO1994026061A1 (fr) 1993-04-29 1994-11-10 Michael Friedland Systeme de camera video mains libres
JPH08102547A (ja) * 1994-09-30 1996-04-16 Casio Comput Co Ltd 光電変換装置及びその製造方法
RU2114490C1 (ru) * 1995-08-08 1998-06-27 Винницкий государственный технический университет Полупроводниковый оптический датчик
JPH0980470A (ja) * 1995-09-14 1997-03-28 Hitachi Electron Eng Co Ltd Ｔｆｔ基板の配線欠陥修復方法
JP3704406B2 (ja) * 1996-10-30 2005-10-12 株式会社東芝 固体撮像装置
US6310683B1 (en) * 1997-08-05 2001-10-30 Casio Computer Co., Ltd. Apparatus for reading fingerprint

Also Published As

Publication number Publication date
CN1319257A (zh) 2001-10-24
AU756447B2 (en) 2003-01-16
EA200100409A1 (ru) 2001-10-22
HK1041366A1 (en) 2002-07-05
WO2001009960A1 (fr) 2001-02-08
EP1118126A1 (fr) 2001-07-25
US6670595B1 (en) 2003-12-30
CA2346032C (fr) 2004-03-23
NO20011640D0 (no) 2001-03-30
ATE424043T1 (de) 2009-03-15
DE60041627D1 (en) 2009-04-09
AU6182800A (en) 2001-02-19
HK1041366B (en) 2009-06-19
CN1316636C (zh) 2007-05-16
TW465105B (en) 2001-11-21
CA2346032A1 (fr) 2001-02-08
KR20010075560A (ko) 2001-08-09
EA003343B1 (ru) 2003-04-24
EP1118126B1 (fr) 2009-02-25

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Legal Events

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