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NL6505284A - - Google Patents

Info

Publication number
NL6505284A
NL6505284A NL6505284A NL6505284A NL6505284A NL 6505284 A NL6505284 A NL 6505284A NL 6505284 A NL6505284 A NL 6505284A NL 6505284 A NL6505284 A NL 6505284A NL 6505284 A NL6505284 A NL 6505284A
Authority
NL
Netherlands
Prior art keywords
molybdenum
layer
aluminium
gold
silicon
Prior art date
Application number
NL6505284A
Other versions
NL145989B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US363197A external-priority patent/US3290570A/en
Priority claimed from US405461A external-priority patent/US3341753A/en
Application filed filed Critical
Publication of NL6505284A publication Critical patent/NL6505284A/xx
Publication of NL145989B publication Critical patent/NL145989B/en

Links

Classifications

    • H—ELECTRICITY
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12826—Group VIB metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Resistance Heating (AREA)

Abstract

The electrodes of a semi-conductor device (see Division H1) are provided by depositing a <PICT:1104804/C6-C7/1> bi-metallic film, comprising a layer of molybdenum covered with a layer of gold or aluminium, over the surface of the device and etching to shape. The device may be of silicon covered with a layer of silicon oxide, the electrodes overlying the oxide except where they extend through windows and contact the silicon. The surface of the device is subjected to a series of cleaning steps and the metal layers are deposited using the apparatus shown in Fig. 3 in which the devices 25 are supported on a stainless steel sheet 24 heated by quartz infrared tubes 26 inside an evacuated bell jar 21. The molybdenum source comprises a molybdenum strip 29 the width of which is constricted at its centre so that when an electric current is passed through the strip the centre part is heated to just below its melting point and begins to evaporate. The source of the covering layer comprises a tungsten heating coil 27 arranged to evaporate a charge 28 of gold. A thin flash of aluminium may be deposited over the surface before the molybdenum and gold (or aluminium) layers.
NL656505284A 1964-04-28 1965-04-26 SEMI-CONDUCTOR DEVICE PROVIDED WITH A GUIDE LAYER. NL145989B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US363197A US3290570A (en) 1964-04-28 1964-04-28 Multilevel expanded metallic contacts for semiconductor devices
US405461A US3341753A (en) 1964-10-21 1964-10-21 Metallic contacts for semiconductor devices

Publications (2)

Publication Number Publication Date
NL6505284A true NL6505284A (en) 1965-10-29
NL145989B NL145989B (en) 1975-05-15

Family

ID=27001945

Family Applications (1)

Application Number Title Priority Date Filing Date
NL656505284A NL145989B (en) 1964-04-28 1965-04-26 SEMI-CONDUCTOR DEVICE PROVIDED WITH A GUIDE LAYER.

Country Status (4)

Country Link
FR (1) FR1439326A (en)
GB (1) GB1104804A (en)
MY (1) MY6900255A (en)
NL (1) NL145989B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL159822B (en) * 1969-01-02 1979-03-15 Philips Nv SEMICONDUCTOR DEVICE.
FR2170846B1 (en) * 1972-02-03 1975-10-24 Garyainov Stanislav
CN111739806B (en) * 2020-07-01 2024-09-20 中国科学院上海技术物理研究所 A method for manufacturing an indium ball array of a focal plane detector with a small center distance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component

Also Published As

Publication number Publication date
GB1104804A (en) 1968-02-28
NL145989B (en) 1975-05-15
MY6900255A (en) 1969-12-31
FR1439326A (en) 1966-05-20

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