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NL2002999A1 - Lithographic apparatus and device manufacturing method. - Google Patents

Lithographic apparatus and device manufacturing method. Download PDF

Info

Publication number
NL2002999A1
NL2002999A1 NL2002999A NL2002999A NL2002999A1 NL 2002999 A1 NL2002999 A1 NL 2002999A1 NL 2002999 A NL2002999 A NL 2002999A NL 2002999 A NL2002999 A NL 2002999A NL 2002999 A1 NL2002999 A1 NL 2002999A1
Authority
NL
Netherlands
Prior art keywords
device manufacturing
lithographic apparatus
lithographic
manufacturing
Prior art date
Application number
NL2002999A
Other languages
English (en)
Inventor
Jozef Finders
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2002999A1 publication Critical patent/NL2002999A1/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL2002999A 2008-06-24 2009-06-11 Lithographic apparatus and device manufacturing method. NL2002999A1 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12940708P 2008-06-24 2008-06-24

Publications (1)

Publication Number Publication Date
NL2002999A1 true NL2002999A1 (nl) 2009-12-29

Family

ID=41430885

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2002999A NL2002999A1 (nl) 2008-06-24 2009-06-11 Lithographic apparatus and device manufacturing method.

Country Status (6)

Country Link
US (3) US7982856B2 (nl)
JP (1) JP4970498B2 (nl)
KR (1) KR101092985B1 (nl)
CN (1) CN101614965B (nl)
NL (1) NL2002999A1 (nl)
TW (2) TWI544289B (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1036905A1 (nl) * 2008-06-03 2009-12-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP4970498B2 (ja) * 2008-06-24 2012-07-04 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
WO2010111656A2 (en) * 2009-03-27 2010-09-30 Life Technologies Corporation Systems and methods for assessing images
NL2004323A (en) * 2009-04-16 2010-10-18 Asml Netherlands Bv Device manufacturing method and lithographic apparatus.
JP5401369B2 (ja) 2010-03-19 2014-01-29 株式会社細川洋行 自立袋およびその製造方法、ならびに内容物入り自立袋
NL2008184A (en) * 2011-02-28 2012-08-29 Asml Netherlands Bv Gas manifold, module for a lithographic apparatus, lithographic apparatus and device manufacturing method.
US8736814B2 (en) * 2011-06-13 2014-05-27 Micron Technology, Inc. Lithography wave-front control system and method
NL2009850A (en) 2011-12-02 2013-06-05 Asml Netherlands Bv Lithographic method and apparatus.
US10216096B2 (en) * 2015-08-14 2019-02-26 Kla-Tencor Corporation Process-sensitive metrology systems and methods
DE102016209616A1 (de) 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
US10209627B2 (en) * 2017-01-06 2019-02-19 Kla-Tencor Corporation Systems and methods for focus-sensitive metrology targets
EP4016186A1 (en) * 2020-12-18 2022-06-22 ASML Netherlands B.V. Metrology method for measuring an etched trench and associated metrology apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629182A (ja) * 1992-05-15 1994-02-04 Nikon Corp 露光方法
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
JP3581628B2 (ja) * 2000-03-13 2004-10-27 沖電気工業株式会社 半導体装置の製造方法
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
JP2007317847A (ja) * 2006-05-25 2007-12-06 Nikon Corp 露光装置及びデバイス製造方法
US7525640B2 (en) * 2006-11-07 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054449B2 (en) * 2006-11-22 2011-11-08 Asml Holding N.V. Enhancing the image contrast of a high resolution exposure tool
US7692766B2 (en) * 2007-05-04 2010-04-06 Asml Holding Nv Lithographic apparatus
NL1036905A1 (nl) 2008-06-03 2009-12-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP4970498B2 (ja) * 2008-06-24 2012-07-04 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法

Also Published As

Publication number Publication date
JP4970498B2 (ja) 2012-07-04
US8416394B2 (en) 2013-04-09
TW201512791A (zh) 2015-04-01
CN101614965B (zh) 2011-06-01
US20090316125A1 (en) 2009-12-24
KR20100002143A (ko) 2010-01-06
US7982856B2 (en) 2011-07-19
US20120182534A1 (en) 2012-07-19
TWI544289B (zh) 2016-08-01
JP2010010674A (ja) 2010-01-14
CN101614965A (zh) 2009-12-30
US8786828B2 (en) 2014-07-22
US20130222779A1 (en) 2013-08-29
TWI461859B (zh) 2014-11-21
KR101092985B1 (ko) 2011-12-12
TW201007379A (en) 2010-02-16

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AD1A A request for search or an international type search has been filed
WDAP Patent application withdrawn

Effective date: 20100324