NL194417B - Ge´ntegreerde halfgeleiderschakeling. - Google Patents

Ge´ntegreerde halfgeleiderschakeling.

Info

Publication number: NL194417B
Authority: NL; Netherlands
Prior art keywords: semiconductor circuit; integrated semiconductor; integrated; circuit; semiconductor
Prior art date: 1993-05-20

Application number

NL9400830A

Other languages

English (en)

Other versions

NL194417C (nl

NL9400830A (nl

Inventor

Gen Tada

Original Assignee

Fuji Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-05-20

Filing date

1994-05-20

Publication date

2001-11-01

1994-05-20 Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd

1994-12-16 Publication of NL9400830A publication Critical patent/NL9400830A/nl

2001-11-01 Publication of NL194417B publication Critical patent/NL194417B/nl

2002-03-04 Application granted granted Critical

2002-03-04 Publication of NL194417C publication Critical patent/NL194417C/nl

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

NL9400830A 1993-05-20 1994-05-20 Ge´ntegreerde halfgeleiderschakeling. NL194417C (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP11803893		1993-05-20
JP11803893A JP3163839B2 (ja)	1993-05-20	1993-05-20	半導体集積回路

Publications (3)

Publication Number	Publication Date
NL9400830A NL9400830A (nl)	1994-12-16
NL194417B true NL194417B (nl)	2001-11-01
NL194417C NL194417C (nl)	2002-03-04

Family

ID=14726513

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL9400830A NL194417C (nl)	1993-05-20	1994-05-20	Ge´ntegreerde halfgeleiderschakeling.

Country Status (3)

Country	Link
US (1)	US5495122A (nl)
JP (1)	JP3163839B2 (nl)
NL (1)	NL194417C (nl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3184065B2 (ja) *	1994-07-25	2001-07-09	セイコーインスツルメンツ株式会社	半導体集積回路装置及び電子機器
JP2981717B2 (ja) *	1994-09-02	1999-11-22	セイコーインスツルメンツ株式会社	半導体集積回路装置
JPH1084045A (ja) *	1996-09-06	1998-03-31	Matsushita Electron Corp	半導体集積回路装置およびその製造方法
US5880502A (en)	1996-09-06	1999-03-09	Micron Display Technology, Inc.	Low and high voltage CMOS devices and process for fabricating same
JP3542476B2 (ja)	1997-12-01	2004-07-14	三菱電機株式会社	Ｓｏｉ構造のｃｍｏｓ回路
US6133077A (en) *	1998-01-13	2000-10-17	Lsi Logic Corporation	Formation of high-voltage and low-voltage devices on a semiconductor substrate
US6093585A (en) *	1998-05-08	2000-07-25	Lsi Logic Corporation	High voltage tolerant thin film transistor
US6075273A (en) *	1998-06-18	2000-06-13	Lucent Technologies Inc.	Integrated circuit device in which gate oxide thickness is selected to control plasma damage during device fabrication
JP2000124325A (ja) *	1998-10-16	2000-04-28	Nec Corp	半導体装置およびその製造方法
US6255125B1 (en) *	1999-03-26	2001-07-03	Advanced Micro Devices, Inc.	Method and apparatus for compensating for critical dimension variations in the production of a semiconductor wafer
JP2001351989A (ja) *	2000-06-05	2001-12-21	Nec Corp	半導体装置の製造方法
JP2003060199A (ja) *	2001-08-10	2003-02-28	Sanyo Electric Co Ltd	半導体装置とその製造方法
JP2003324159A (ja)	2002-04-26	2003-11-14	Ricoh Co Ltd	半導体装置
JP4052923B2 (ja) *	2002-10-25	2008-02-27	株式会社ルネサステクノロジ	半導体装置
KR100808376B1 (ko) *	2006-08-30	2008-03-03	동부일렉트로닉스 주식회사	반도체 소자의 제조 방법
JP4592666B2 (ja) *	2006-10-11	2010-12-01	ルネサスエレクトロニクス株式会社	半導体記憶装置およびその製造方法
KR101232935B1 (ko) *	2010-11-23	2013-02-15	주식회사 동부하이텍	Ｌｄｍｏｓ반도체 소자
US10686047B2 (en) *	2018-05-23	2020-06-16	Taiwan Semiconductor Manufacturing Company Ltd.	Semiconductor device and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4118642A (en) *	1975-06-26	1978-10-03	Motorola, Inc.	Higher density insulated gate field effect circuit
JPS56120166A (en) *	1980-02-27	1981-09-21	Hitachi Ltd	Semiconductor ic device and manufacture thereof
JPS56138335A (en) *	1981-03-09	1981-10-28	Hitachi Ltd	Integrated circuit
IT1191558B (it) *	1986-04-21	1988-03-23	Sgs Microelettronica Spa	Dispositivo a semiconduttore integrato di tipo mos con spessore dell'ossido di porta non uniforme e procedimento di fabbricazione dello stesso
JPH01147854A (ja) *	1987-12-04	1989-06-09	Nissan Motor Co Ltd	半導体装置

1993
- 1993-05-20 JP JP11803893A patent/JP3163839B2/ja not_active Expired - Lifetime
1994
- 1994-05-19 US US08/246,250 patent/US5495122A/en not_active Expired - Lifetime
- 1994-05-20 NL NL9400830A patent/NL194417C/nl not_active IP Right Cessation

Also Published As

Publication number	Publication date
JP3163839B2 (ja)	2001-05-08
JPH06334129A (ja)	1994-12-02
US5495122A (en)	1996-02-27
NL194417C (nl)	2002-03-04
NL9400830A (nl)	1994-12-16

Publication	Publication Date	Title
DE69425930D1 (de)	2000-10-26	Integrierte Halbleiterschaltung
DE69428336D1 (de)	2001-10-25	Integrierte Halbleiterschaltungsanordnung
DE69406074D1 (de)	1997-11-13	Integrierte Halbleiterspeicherschaltung
DE69529042D1 (de)	2003-01-16	Halbleiterschaltung
DE69419575D1 (de)	1999-08-26	Integrierte Halbleiterschaltungsanordnung
DE69013267D1 (de)	1994-11-17	Integrierte Halbleiterschaltungsanordnung.
DE69124735D1 (de)	1997-03-27	Integrierte Halbleiterschaltung
DE69023565D1 (de)	1995-12-21	Integrierte Halbleiterschaltung.
DE69327357D1 (de)	2000-01-27	Integrierte Halbleiterschaltungsanordnung
DE69433543D1 (de)	2004-03-18	Halbleitervorrichtung.
DE69012194D1 (de)	1994-10-13	Integrierter Halbleiterschaltkreis.
DE68921088D1 (de)	1995-03-23	Integrierte Halbleiterschaltung.
FI945204A0 (fi)	1994-11-04	Puolijohdekomponentti
DE69126848D1 (de)	1997-08-21	Integrierte Halbleiterschaltung
NL194417B (nl)	2001-11-01	Ge´ntegreerde halfgeleiderschakeling.
DE69429979D1 (de)	2002-04-04	Halbleiterintegriertes Schaltungsbauelement
DE69408362D1 (de)	1998-03-12	Halbleiterintegrierte Schaltung
DE69011038D1 (de)	1994-09-01	Integrierte Halbleiterschaltung.
DE69111528D1 (de)	1995-08-31	Integrierter Halbleiterschaltkreis.
KR960015828A (ko)	1996-05-22	반도체 집적 회로
DE69416355D1 (de)	1999-03-18	Integrierte Halbleiterschaltungsanordnung
DE69517759D1 (de)	2000-08-10	Integrierte Halbleiterschaltung
DE69416192D1 (de)	1999-03-11	Integrierte Halbleiterschaltung
KR960015898A (ko)	1996-05-22	반도체 집적회로
DE69621576D1 (de)	2002-07-11	Integrierte Halbleiterschaltung

Legal Events

Date	Code	Title	Description
1994-12-16	A1A	A request for search or an international-type search has been filed
1996-06-03	BB	A search report has been drawn up
1996-11-01	BC	A request for examination has been filed
2004-02-02	V1	Lapsed because of non-payment of the annual fee	Effective date: 20031201