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NL1012534A1 - A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems. - Google Patents

A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems.

Info

Publication number
NL1012534A1
NL1012534A1 NL1012534A NL1012534A NL1012534A1 NL 1012534 A1 NL1012534 A1 NL 1012534A1 NL 1012534 A NL1012534 A NL 1012534A NL 1012534 A NL1012534 A NL 1012534A NL 1012534 A1 NL1012534 A1 NL 1012534A1
Authority
NL
Netherlands
Prior art keywords
manufacturing
well
layer structure
sensor systems
magnetoresistive sensor
Prior art date
Application number
NL1012534A
Other languages
Dutch (nl)
Other versions
NL1012534C2 (en
Inventor
Hugo Van Den Berg
Roland Mattheis
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL1012534A1 publication Critical patent/NL1012534A1/en
Application granted granted Critical
Publication of NL1012534C2 publication Critical patent/NL1012534C2/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Thin Magnetic Films (AREA)
NL1012534A 1998-07-07 1999-07-07 A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems. NL1012534C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19830343 1998-07-07
DE19830343A DE19830343C1 (en) 1998-07-07 1998-07-07 Artificial antiferromagnetic layer manufacturing method for MR sensor, involves affecting symmetry of antiferromagnetic layer partially by mask to adjust orientation of magnetization of bias layer

Publications (2)

Publication Number Publication Date
NL1012534A1 true NL1012534A1 (en) 2000-01-10
NL1012534C2 NL1012534C2 (en) 2001-03-23

Family

ID=7873240

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1012534A NL1012534C2 (en) 1998-07-07 1999-07-07 A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems.

Country Status (3)

Country Link
JP (1) JP2000049029A (en)
DE (1) DE19830343C1 (en)
NL (1) NL1012534C2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10028640B4 (en) * 2000-06-09 2005-11-03 Institut für Physikalische Hochtechnologie e.V. Wheatstone bridge, including bridge elements, consisting of a spin valve system, and a method for their production
JP3498737B2 (en) * 2001-01-24 2004-02-16 ヤマハ株式会社 Manufacturing method of magnetic sensor
DE10128963A1 (en) * 2001-06-15 2003-01-02 Siemens Ag Magnetoresistive sensor for detecting magnetic field has soft magnetic measurement layer system and artificial antiferromagnetic reference layer system
DE10128964B4 (en) * 2001-06-15 2012-02-09 Qimonda Ag Digital magnetic memory cell device
US6531723B1 (en) * 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
DE10214946B4 (en) * 2002-04-04 2006-01-19 "Stiftung Caesar" (Center Of Advanced European Studies And Research) TMR sensor
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
DE102007026503B4 (en) 2007-06-05 2009-08-27 Bourns, Inc., Riverside Process for producing a magnetic layer on a substrate and printable magnetizable paint
DE102010018874A1 (en) * 2010-04-30 2011-11-03 Siemens Aktiengesellschaft Wheatstone bridge with XMR Spinvalve systems

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4243358A1 (en) * 1992-12-21 1994-06-23 Siemens Ag Magnetic resistance sensor with artificial antiferromagnet and method for its production

Also Published As

Publication number Publication date
NL1012534C2 (en) 2001-03-23
JP2000049029A (en) 2000-02-18
DE19830343C1 (en) 2000-04-06

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20010122

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20040201