[go: up one dir, main page]

MY154799A - Temperature compensation method for ion sensor using vt extractor circuit - Google Patents

Temperature compensation method for ion sensor using vt extractor circuit

Info

Publication number
MY154799A
MY154799A MYPI20080014A MYPI20080014A MY154799A MY 154799 A MY154799 A MY 154799A MY PI20080014 A MYPI20080014 A MY PI20080014A MY PI20080014 A MYPI20080014 A MY PI20080014A MY 154799 A MY154799 A MY 154799A
Authority
MY
Malaysia
Prior art keywords
temperature compensation
isfet
compensation method
ion sensor
extractor circuit
Prior art date
Application number
MYPI20080014A
Inventor
Yuzman Yusoff
Nabihah Razali
Rohana Musa
Mohamad Faizal Hashim
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI20080014A priority Critical patent/MY154799A/en
Priority to PCT/MY2008/000193 priority patent/WO2009088278A2/en
Publication of MY154799A publication Critical patent/MY154799A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45138—Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

AN ADAPTABLE ANALOG READ-OUT INTERFACE CIRCUIT FOR ION-SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) HAS BEEN INVENTED THAT USES A CMOS TEMPERATURE SENSOR (THRESHOLD VOLTAGE EXTRACTION) TO IMPROVE THE THERMAL STABILITY OF THE ISFET. THE IMPROVEMENT IS ACHIEVED BY SUMMATION OF THE POSITIVE TEMPERATURE COEFFICIENT OF THE ISFET AND THE NEGATIVE COEFFICIENT OF THE CMOS TEMPERATURE SENSOR.
MYPI20080014A 2008-01-04 2008-01-04 Temperature compensation method for ion sensor using vt extractor circuit MY154799A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI20080014A MY154799A (en) 2008-01-04 2008-01-04 Temperature compensation method for ion sensor using vt extractor circuit
PCT/MY2008/000193 WO2009088278A2 (en) 2008-01-04 2008-12-23 Temperature compensation method for ion sensor using vt extractor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI20080014A MY154799A (en) 2008-01-04 2008-01-04 Temperature compensation method for ion sensor using vt extractor circuit

Publications (1)

Publication Number Publication Date
MY154799A true MY154799A (en) 2015-07-31

Family

ID=40853639

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20080014A MY154799A (en) 2008-01-04 2008-01-04 Temperature compensation method for ion sensor using vt extractor circuit

Country Status (2)

Country Link
MY (1) MY154799A (en)
WO (1) WO2009088278A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6493113B2 (en) * 2015-09-11 2019-04-03 王子ホールディングス株式会社 Printing sheet, printing sheet with release layer, and decorative sheet
JP6436023B2 (en) * 2015-09-11 2018-12-12 王子ホールディングス株式会社 Printing sheet, printing sheet with release layer, and decorative sheet
CN110186987B (en) * 2019-06-27 2022-03-08 上海三信仪表厂 Universal solution PH value 25 degree conversion method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879517A (en) * 1988-07-25 1989-11-07 General Signal Corporation Temperature compensation for potentiometrically operated ISFETS
TW465055B (en) * 2000-07-20 2001-11-21 Univ Nat Yunlin Sci & Tech Method and apparatus for measurement of temperature parameter of ISFET using amorphous silicon hydride as sensor membrane

Also Published As

Publication number Publication date
WO2009088278A2 (en) 2009-07-16
WO2009088278A3 (en) 2009-10-29

Similar Documents

Publication Publication Date Title
TW201615002A (en) Imaging device and electronic device
WO2013060348A8 (en) Electronic device, in particular mobile telephone, for detecting radiation
PH12020551228A1 (en) Aerosol generating device and method for controlling same
WO2010138434A3 (en) Environment and/or target segmentation
GB201200761D0 (en) Improvements in or relating to image sensors
IL210452A0 (en) Cyclic inhibitors of 11 beta - hydroxysteroid dehydrogenase 1
EP2163888A4 (en) ENZYMATIC ELECTRODE AND ENZYMATIC SENSOR
WO2009017882A3 (en) Nano structured field effect sensor and methods of forming and using same
EP3102706A4 (en) Ultra-sensitive detection of extremely low level biological analytes using electrochemical signal amplification and biosensor
MX2013007572A (en) Methods for facilitating muscle recovery after a period of disuse using beta-hydroxy-beta-methylbutyrate.
WO2011080327A3 (en) Improved microneedle
MX387782B (en) SINGLE-USE BIOREACTOR SENSOR ARCHITECTURE.
PH12015500515A1 (en) Beta-glucosidase from magnaporthe grisea
RU2011141857A (en) METHOD FOR CONTINUOUS MEASUREMENT OF CONCENTRATION OF SUBSTRATE
MY154799A (en) Temperature compensation method for ion sensor using vt extractor circuit
WO2014043716A3 (en) Component protective overmolding using protective external coatings
WO2010083827A3 (en) High voltage switch with adjustable current
AU2022296509A1 (en) Sensor operation adapted to patient behavior
ATE510183T1 (en) METHOD FOR MEASURING COLUMNS AND FLUSHNESS
WO2012010979A3 (en) Methods and apparatuses for low-noise magnetic sensors
WO2009088280A3 (en) Adaptable analog read-out interface circuit for isfet based sensor
UA100034C2 (en) Method of correcting the gain of a capacitive member, and a device for implementing the method
PH12016501257A1 (en) An apparatus and associated methods for temperature sensing
WO2009091237A3 (en) Apparatus for cloud cover estimation and method thereof
MX360284B (en) Correcting throughput errors using integrated computational elements.