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MX2015007055A - Capa de siembra para contacto conductor de celda solar. - Google Patents

Capa de siembra para contacto conductor de celda solar.

Info

Publication number
MX2015007055A
MX2015007055A MX2015007055A MX2015007055A MX2015007055A MX 2015007055 A MX2015007055 A MX 2015007055A MX 2015007055 A MX2015007055 A MX 2015007055A MX 2015007055 A MX2015007055 A MX 2015007055A MX 2015007055 A MX2015007055 A MX 2015007055A
Authority
MX
Mexico
Prior art keywords
solar cell
substrate
contact
conductive layer
seed coat
Prior art date
Application number
MX2015007055A
Other languages
English (en)
Inventor
Michael Cudzinovic
Junbo Wu
Xi Zhu
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of MX2015007055A publication Critical patent/MX2015007055A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

Se describen capas de siembra para contactos conductores de celda solar y métodos para formar capas de siembra para contactos conductores de celda solar. Por ejemplo, una celda solar incluye un substrato. Una región emisora está dispuesta encima del substrato. Un contacto conductor está dispuesto sobre la región emisora e incluye una capa conductora que está en contacto con la región emisora. La capa conductora está compuesta por partículas de aluminio/silicio (Al/Si) que tienen una composición de más de aproximadamente 15% de Si, y el resto Al. En otro ejemplo una celda solar incluye un substrato que tiene una región de difusión en una superficie del substrato o cerca de ella. Un contacto conductor está dispuesto encima de la región de difusión e incluye una capa conductora en contacto con el substrato. La capa conductora está compuesta por partículas de aluminio/silicio (Al/Si) que tienen una composición de más de aproximadamente 15% de Si, el resto, Al.
MX2015007055A 2012-12-06 2013-12-03 Capa de siembra para contacto conductor de celda solar. MX2015007055A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/706,728 US20140158192A1 (en) 2012-12-06 2012-12-06 Seed layer for solar cell conductive contact
PCT/US2013/072904 WO2014089103A1 (en) 2012-12-06 2013-12-03 Seed layer for solar cell conductive contact

Publications (1)

Publication Number Publication Date
MX2015007055A true MX2015007055A (es) 2015-09-28

Family

ID=50879651

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015007055A MX2015007055A (es) 2012-12-06 2013-12-03 Capa de siembra para contacto conductor de celda solar.

Country Status (10)

Country Link
US (2) US20140158192A1 (es)
EP (1) EP2929567A4 (es)
JP (1) JP6355213B2 (es)
KR (1) KR20150092754A (es)
CN (1) CN105637593A (es)
AU (1) AU2013355406B2 (es)
MX (1) MX2015007055A (es)
SG (1) SG11201504417VA (es)
TW (1) TWI603485B (es)
WO (1) WO2014089103A1 (es)

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US9837576B2 (en) * 2014-09-19 2017-12-05 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion
CN104362216B (zh) * 2014-10-23 2017-02-15 云南大学 一种晶体硅太阳能电池前栅线电极的制备方法
US20160163901A1 (en) * 2014-12-08 2016-06-09 Benjamin Ian Hsia Laser stop layer for foil-based metallization of solar cells
US10535790B2 (en) * 2015-06-25 2020-01-14 Sunpower Corporation One-dimensional metallization for solar cells
US20160380126A1 (en) 2015-06-25 2016-12-29 David Aaron Randolph Barkhouse Multi-layer barrier for metallization
CN209389043U (zh) * 2018-11-27 2019-09-13 晶澳（扬州）太阳能科技有限公司 晶体硅太阳能电池及光伏组件
CN115000226B (zh) * 2022-07-29 2022-10-11 中国华能集团清洁能源技术研究院有限公司 背接触异质结电池片及其制作方法

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Also Published As

Publication number Publication date
US20140158192A1 (en) 2014-06-12
JP6355213B2 (ja) 2018-07-11
JP2016508286A (ja) 2016-03-17
CN105637593A (zh) 2016-06-01
SG11201504417VA (en) 2015-07-30
AU2013355406A1 (en) 2014-06-12
US20160190364A1 (en) 2016-06-30
EP2929567A4 (en) 2015-12-02
KR20150092754A (ko) 2015-08-13
TWI603485B (zh) 2017-10-21
WO2014089103A1 (en) 2014-06-12
AU2013355406B2 (en) 2017-06-29
EP2929567A1 (en) 2015-10-14
TW201431098A (zh) 2014-08-01

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