[go: up one dir, main page]

MX2012006821A - Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. - Google Patents

Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.

Info

Publication number
MX2012006821A
MX2012006821A MX2012006821A MX2012006821A MX2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A
Authority
MX
Mexico
Prior art keywords
same
silicon film
manufacturing methods
solar cell
increase
Prior art date
Application number
MX2012006821A
Other languages
English (en)
Other versions
MX336541B (es
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of MX2012006821A publication Critical patent/MX2012006821A/es
Publication of MX336541B publication Critical patent/MX336541B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Catalysts (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Un método para aumentar la turbidez de un apilamiento de recubrimiento que tiene una capa superior y una capa de sub-recubrimiento usando un proceso de recubrimiento por deposición química en fase vapor que incluye, al menos, uno de: aumentar un caudal de precursor; disminuir un caudal de gas portador; aumentar una temperatura de sustrato; aumentar un caudal de agua; disminuir un caudal de escape; y aumentar un espesor de al menos una de la capa superior o capa de sub-recubrimiento.
MX2012006821A 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. MX336541B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,299 US9224892B2 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved haze and methods of making the same
PCT/US2010/059037 WO2011084292A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved haze and methods of making the same

Publications (2)

Publication Number Publication Date
MX2012006821A true MX2012006821A (es) 2012-07-23
MX336541B MX336541B (es) 2016-01-22

Family

ID=44149391

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012006821A MX336541B (es) 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.

Country Status (12)

Country Link
US (1) US9224892B2 (es)
EP (1) EP2517259B1 (es)
JP (1) JP5607180B2 (es)
KR (1) KR101511015B1 (es)
BR (1) BR112012014980A2 (es)
IN (1) IN2012DN05184A (es)
MX (1) MX336541B (es)
MY (1) MY159272A (es)
RU (1) RU2526298C2 (es)
TR (1) TR201908926T4 (es)
TW (2) TWI524539B (es)
WO (1) WO2011084292A2 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2012013614A (es) * 2010-05-26 2013-03-20 Univ Toledo Estructuras fotovoltaicas que tienen una capa de interfaz de difraccion de luz y metodos para fabricar las mismas.
CN102420260A (zh) * 2011-11-03 2012-04-18 同济大学 薄膜硅太阳能电池的背散射表面及其制备方法
WO2014164194A1 (en) * 2013-03-12 2014-10-09 Ppg Industries Ohio, Inc. High haze underlayer for solar cell
MY176206A (en) * 2013-12-26 2020-07-24 Vitro Flat Glass Llc Organic light emitting diode with light extracting electrode
AU2015367228B2 (en) 2014-12-19 2017-04-20 Commonwealth Scientific And Industrial Research Organisation Process of forming a photoactive layer of an optoelectronic device
JP6773944B2 (ja) * 2016-01-06 2020-10-21 ｉｎＱｓ株式会社 光発電素子
WO2018010680A1 (en) * 2016-07-14 2018-01-18 The Hong Kong Polytechnic University Rose petal textured haze film for photovoltaic cells
JP7372234B2 (ja) 2017-08-31 2023-10-31 ピルキントン グループ リミテッド コーティングされたガラス物品、その作製方法、およびそれにより作製された光電池
CN111051567A (zh) 2017-08-31 2020-04-21 皮尔金顿集团有限公司 形成氧化硅涂层的化学气相沉积方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971843A (en) 1983-07-29 1990-11-20 Ppg Industries, Inc. Non-iridescent infrared-reflecting coated glass
US4746347A (en) 1987-01-02 1988-05-24 Ppg Industries, Inc. Patterned float glass method
US4792536A (en) 1987-06-29 1988-12-20 Ppg Industries, Inc. Transparent infrared absorbing glass and method of making
US4853257A (en) 1987-09-30 1989-08-01 Ppg Industries, Inc. Chemical vapor deposition of tin oxide on float glass in the tin bath
US5030593A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Lightly tinted glass compatible with wood tones
US5030594A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Highly transparent, edge colored glass
US5240886A (en) 1990-07-30 1993-08-31 Ppg Industries, Inc. Ultraviolet absorbing, green tinted glass
US5393593A (en) 1990-10-25 1995-02-28 Ppg Industries, Inc. Dark gray, infrared absorbing glass composition and coated glass for privacy glazing
CZ286855B6 (cs) 1991-12-26 2000-07-12 Elf Atochem North America, Inc. Směs pro povlékání skla
US5356718A (en) 1993-02-16 1994-10-18 Ppg Industries, Inc. Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates
US5599387A (en) 1993-02-16 1997-02-04 Ppg Industries, Inc. Compounds and compositions for coating glass with silicon oxide
FR2703999B1 (fr) * 1993-04-16 1995-05-24 Rhone Poulenc Chimie Nouveaux pigments minéraux colorés à base de sulfures de terres rares, procédé de synthèse et utilisations.
US5536718A (en) 1995-01-17 1996-07-16 American Cyanamid Company Tricyclic benzazepine vasopressin antagonists
US5714199A (en) 1995-06-07 1998-02-03 Libbey-Owens-Ford Co. Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
EP1054454A3 (en) * 1999-05-18 2004-04-21 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
JP5068946B2 (ja) * 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
WO2005041216A1 (ja) 2003-10-23 2005-05-06 Bridgestone Corporation 透明導電性基板、色素増感型太陽電池用電極及び色素増感型太陽電池
US7781668B2 (en) 2004-03-25 2010-08-24 Kaneka Corporation Substrate for thin-film solar cell, method for producing the same, and thin-film solar cell employing it
JP2005311292A (ja) * 2004-03-25 2005-11-04 Kaneka Corp 薄膜太陽電池用基板、及びその製造方法、並びにそれを用いた薄膜太陽電池
JP2006032785A (ja) * 2004-07-20 2006-02-02 Sumco Corp Ｓｏｉ基板の製造方法及びｓｏｉ基板
US7431992B2 (en) * 2004-08-09 2008-10-07 Ppg Industries Ohio, Inc. Coated substrates that include an undercoating
JP3954085B2 (ja) * 2005-10-07 2007-08-08 シャープ株式会社 光電変換素子およびこれを用いた太陽電池
KR20080074086A (ko) * 2005-11-17 2008-08-12 아사히 가라스 가부시키가이샤 태양 전지용 투명 도전성 기판 및 그 제조 방법
US8097340B2 (en) * 2006-02-08 2012-01-17 Ppg Industries Ohio, Inc. Coated substrates having undercoating layers that exhibit improved photocatalytic activity
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu
EP2232570A2 (en) 2007-12-19 2010-09-29 Oerlikon Trading AG, Trübbach Method for obtaining high performance thin film devices deposited on highly textured substrates
JP5280708B2 (ja) * 2008-03-06 2013-09-04 シャープ株式会社 太陽電池モジュール

Also Published As

Publication number Publication date
TW201138125A (en) 2011-11-01
EP2517259A2 (en) 2012-10-31
JP2013515373A (ja) 2013-05-02
WO2011084292A3 (en) 2011-09-09
WO2011084292A2 (en) 2011-07-14
US9224892B2 (en) 2015-12-29
EP2517259B1 (en) 2019-04-17
RU2526298C2 (ru) 2014-08-20
US20110146767A1 (en) 2011-06-23
KR101511015B1 (ko) 2015-04-13
RU2012131142A (ru) 2014-01-27
CN102652365A (zh) 2012-08-29
BR112012014980A2 (pt) 2016-04-05
TWI524539B (zh) 2016-03-01
JP5607180B2 (ja) 2014-10-15
MX336541B (es) 2016-01-22
KR20120096099A (ko) 2012-08-29
TW201631785A (zh) 2016-09-01
MY159272A (en) 2016-12-30
IN2012DN05184A (es) 2015-10-23
TR201908926T4 (tr) 2019-07-22

Similar Documents

Publication Publication Date Title
MX2012006821A (es) Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.
WO2012044622A3 (en) Low-temperature dielectric film formation by chemical vapor deposition
WO2010094048A3 (en) Solar cell absorber layer formed from equilibrium precursor(s)
JP2009212531A5 (es)
EP2281300A4 (en) METHOD AND DEVICE FOR A CHEMICAL STEAM SEPARATION REACTOR
WO2012145148A3 (en) Low temperature silicon oxide conversion
WO2006091448A3 (en) Chemical vapor deposition reactor having multiple inlets
BRPI0909305A2 (pt) Processo e sistema de depósito de um metal ou metaloide sobre nanotubos de carbono
GB201113244D0 (en) A diamond optical element
WO2008121478A3 (en) Roll-to-roll plasma enhanced chemical vapor deposition method of barrier layers comprising silicon and carbon
MY145709A (en) Method of manufacturing crystalline silicon solar cells with improved surface passivation
WO2010107835A3 (en) Vapor deposition reactor system and methods thereof
JP2010514099A5 (es)
WO2011028377A3 (en) High concentration water pulses for atomic layer deposition
EA201071184A1 (ru) Способ осаждения тонкого слоя
SG136030A1 (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
WO2011126637A3 (en) Method and apparatus for removing glass soot sheet from substrate
WO2011047210A3 (en) Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
US9281420B2 (en) Chemical vapor deposited film formed by plasma CVD method
WO2012069451A3 (en) Thermal gradient chemical vapour deposition apparatus and method
WO2013124394A3 (de) Verfahren zum herstellen einer solarzelle
TW201130180A (en) Method of forming variable resistance memory device
GB2517325A (en) High efficiency solar cells fabricated by inexpensive PECVD
JP2012188735A5 (es)
CN106058071A (zh) Oled器件的阻挡层结构及其制备方法