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MX2012002118A - Memoria flash de tipo nand interrumpible. - Google Patents

Memoria flash de tipo nand interrumpible.

Info

Publication number
MX2012002118A
MX2012002118A MX2012002118A MX2012002118A MX2012002118A MX 2012002118 A MX2012002118 A MX 2012002118A MX 2012002118 A MX2012002118 A MX 2012002118A MX 2012002118 A MX2012002118 A MX 2012002118A MX 2012002118 A MX2012002118 A MX 2012002118A
Authority
MX
Mexico
Prior art keywords
flash memory
nand flash
logical unit
memory logical
commands
Prior art date
Application number
MX2012002118A
Other languages
English (en)
Inventor
John G Bennett
Original Assignee
Microsoft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Corp filed Critical Microsoft Corp
Publication of MX2012002118A publication Critical patent/MX2012002118A/es

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/20—Suspension of programming or erasing cells in an array in order to read other cells in it

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

Una unidad lógica de memoria flash de tipo NAND. La unidad lógica en memoria flash de tipo NAND incluye un circuito de control que responde a comandos y permite que los comandos de programa y/o borrado sean interrumpibles por comandos de lectura. El circuito de control incluye un grupo de registros internos para realizar el comando actual, y un grupo de registros externos para recibir comandos. El circuito de control también incluye un grupo de registros complementarios que permiten que la unidad lógica de memoria flash de tipo NAND tenga redundancia para mantener el estado de un comando de programa o borrado interrumpido. Cuando el comando de programa o borrado interrumpido se va a reasumir, la unidad lógica de memoria flash de tipo NAND de esa forma puede reasumir rápidamente la operación de programa o borrado pausada. Esto proporciona mejora significativa para tiempos de respuesta de lectura en el contexto de una unidad lógica de memoria flash de tipo NAND.
MX2012002118A 2009-08-28 2010-08-06 Memoria flash de tipo nand interrumpible. MX2012002118A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/549,897 US8850103B2 (en) 2009-08-28 2009-08-28 Interruptible NAND flash memory
PCT/US2010/044785 WO2011031398A2 (en) 2009-08-28 2010-08-06 Interruptible nand flash memory

Publications (1)

Publication Number Publication Date
MX2012002118A true MX2012002118A (es) 2012-03-07

Family

ID=43626518

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012002118A MX2012002118A (es) 2009-08-28 2010-08-06 Memoria flash de tipo nand interrumpible.

Country Status (9)

Country Link
US (1) US8850103B2 (es)
EP (1) EP2471067B1 (es)
JP (1) JP5529275B2 (es)
KR (1) KR101702158B1 (es)
CN (1) CN102483951B (es)
AU (1) AU2010292898B2 (es)
CA (1) CA2768212C (es)
MX (1) MX2012002118A (es)
WO (1) WO2011031398A2 (es)

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Also Published As

Publication number Publication date
CN102483951B (zh) 2015-04-29
CA2768212A1 (en) 2011-03-17
JP2013503412A (ja) 2013-01-31
WO2011031398A3 (en) 2011-05-05
KR101702158B1 (ko) 2017-02-02
US8850103B2 (en) 2014-09-30
EP2471067A4 (en) 2013-08-07
CN102483951A (zh) 2012-05-30
EP2471067A2 (en) 2012-07-04
EP2471067B1 (en) 2021-09-15
AU2010292898B2 (en) 2014-06-05
JP5529275B2 (ja) 2014-06-25
KR20120092561A (ko) 2012-08-21
CA2768212C (en) 2016-09-13
WO2011031398A2 (en) 2011-03-17
US20110055453A1 (en) 2011-03-03
AU2010292898A1 (en) 2012-02-16

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