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MX2011007280A - Sensor de radiacion electromagnetica y metodo de fabricacion. - Google Patents

Sensor de radiacion electromagnetica y metodo de fabricacion.

Info

Publication number
MX2011007280A
MX2011007280A MX2011007280A MX2011007280A MX2011007280A MX 2011007280 A MX2011007280 A MX 2011007280A MX 2011007280 A MX2011007280 A MX 2011007280A MX 2011007280 A MX2011007280 A MX 2011007280A MX 2011007280 A MX2011007280 A MX 2011007280A
Authority
MX
Mexico
Prior art keywords
layer
forming
manufacture
electromagnetic radiation
radiation sensor
Prior art date
Application number
MX2011007280A
Other languages
English (en)
Inventor
Matthieu Liger
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42045395&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MX2011007280(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of MX2011007280A publication Critical patent/MX2011007280A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

Un método para formar un sensor de semiconductor (100) incluye proporcionar un substrato (102), formar una capa reflectora (104) sobre el substrato, formar una capa de sacrificio en la capa reflectora, formar una capa absorbente (106) con un grosor de menos de aproximadamente 50 nm en la capa de sacrificio, formar un absorbedor en la capa absorbente integralmente con al menos una pata de suspensión (110), y remover la capa de sacrificio.
MX2011007280A 2009-01-07 2010-01-06 Sensor de radiacion electromagnetica y metodo de fabricacion. MX2011007280A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/349,860 US7842533B2 (en) 2009-01-07 2009-01-07 Electromagnetic radiation sensor and method of manufacture
PCT/US2010/020237 WO2010080815A1 (en) 2009-01-07 2010-01-06 Electromagnetic radiation sensor and method of manufacture

Publications (1)

Publication Number Publication Date
MX2011007280A true MX2011007280A (es) 2011-09-01

Family

ID=42045395

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2011007280A MX2011007280A (es) 2009-01-07 2010-01-06 Sensor de radiacion electromagnetica y metodo de fabricacion.

Country Status (9)

Country Link
US (1) US7842533B2 (es)
EP (1) EP2386116B1 (es)
JP (1) JP2012514753A (es)
KR (1) KR101698218B1 (es)
CN (1) CN102326255B (es)
BR (1) BRPI1006124B1 (es)
CA (1) CA2748969C (es)
MX (1) MX2011007280A (es)
WO (1) WO2010080815A1 (es)

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KR101922119B1 (ko) 2011-12-22 2019-02-14 삼성전자주식회사 적외선 검출기 및 이를 사용하는 적외선 검출 방법
US8900906B2 (en) 2012-03-08 2014-12-02 Robert Bosch Gmbh Atomic layer deposition strengthening members and method of manufacture
US9698281B2 (en) * 2012-08-22 2017-07-04 Robert Bosch Gmbh CMOS bolometer
US9368658B2 (en) 2012-08-31 2016-06-14 Robert Bosch Gmbh Serpentine IR sensor
US8993966B2 (en) * 2012-09-26 2015-03-31 Honeywell International Inc. Flame sensor integrity monitoring
US9093594B2 (en) 2012-10-17 2015-07-28 Robert Bosch Gmbh Multi-stack film bolometer
KR101902920B1 (ko) * 2012-12-11 2018-10-01 삼성전자주식회사 광대역 표면 플라즈몬 공진기를 포함하는 적외선 검출기
US9257587B2 (en) * 2012-12-21 2016-02-09 Robert Bosch Gmbh Suspension and absorber structure for bolometer
US9199838B2 (en) 2013-10-25 2015-12-01 Robert Bosch Gmbh Thermally shorted bolometer
WO2015160412A2 (en) * 2014-01-24 2015-10-22 The Regents Of The University Of Colorado Novel methods of preparing nanodevices
WO2016004408A2 (en) * 2014-07-03 2016-01-07 Flir Systems, Inc. Vertical microbolometer contact systems and methods
DE102014213369B4 (de) * 2014-07-09 2018-11-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsdetektor und verfahren zur herstellung eines strahlungsdetektors und array von solchen strahlungsdetektoren
WO2016057880A1 (en) 2014-10-10 2016-04-14 Robert Bosch Gmbh Method to modulate the sensitivity of a bolometer via negative interference
FR3046879B1 (fr) * 2016-01-20 2022-07-15 Ulis Procede de fabrication d'un detecteur de rayonnement electromagnetique a micro-encapsulation
US10171919B2 (en) * 2016-05-16 2019-01-01 The Regents Of The University Of Colorado, A Body Corporate Thermal and thermoacoustic nanodevices and methods of making and using same
FR3066044B1 (fr) 2017-05-02 2020-02-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Detecteur de rayonnement electromagnetique, encapsule par report de couche mince.
CN108458789A (zh) * 2018-04-20 2018-08-28 国家纳米科学中心 一种基于硫化钽薄膜的测辐射热计及其制备方法和用途
EP3938746A2 (en) * 2019-03-11 2022-01-19 Flir Commercial Systems, Inc. Microbolometer systems and methods
KR102369495B1 (ko) * 2020-07-29 2022-03-04 주식회사 보다 볼로미터 장치 및 이의 제조방법
KR102284749B1 (ko) * 2020-07-29 2021-08-02 주식회사 보다 볼로미터 장치 및 이의 제조방법
KR102697550B1 (ko) * 2023-04-26 2024-08-23 주식회사 보다 열화상 이미지 센서용 감지 소재 제조방법 및 이를 포함하는 열화상 이미지 센서

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US5021663B1 (en) 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
US5286976A (en) 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
US5288649A (en) 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5260225A (en) 1991-12-20 1993-11-09 Honeywell Inc. Integrated infrared sensitive bolometers
US5512748A (en) * 1994-07-26 1996-04-30 Texas Instruments Incorporated Thermal imaging system with a monolithic focal plane array and method
US6515285B1 (en) 1995-10-24 2003-02-04 Lockheed-Martin Ir Imaging Systems, Inc. Method and apparatus for compensating a radiation sensor for ambient temperature variations
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
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US6690014B1 (en) * 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
JP2001356057A (ja) * 2000-06-13 2001-12-26 Denso Corp 赤外線イメージセンサ及びその製造方法
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FR2844635B1 (fr) 2002-09-16 2005-08-19 Commissariat Energie Atomique Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes
FR2862160B1 (fr) 2003-11-10 2006-05-12 Ulis Dispositif de detection de rayonnements infrarouges a detecteurs bolometriques
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US20080185522A1 (en) 2007-02-06 2008-08-07 Shih-Chia Chang Infrared sensors and methods for manufacturing the infrared sensors

Also Published As

Publication number Publication date
JP2012514753A (ja) 2012-06-28
US20100171190A1 (en) 2010-07-08
CN102326255A (zh) 2012-01-18
CA2748969C (en) 2018-04-03
EP2386116B1 (en) 2017-08-30
US7842533B2 (en) 2010-11-30
CA2748969A1 (en) 2010-07-15
WO2010080815A1 (en) 2010-07-15
BRPI1006124A2 (pt) 2016-06-28
KR101698218B1 (ko) 2017-01-19
CN102326255B (zh) 2015-11-25
EP2386116A1 (en) 2011-11-16
BRPI1006124B1 (pt) 2020-03-10
KR20110107366A (ko) 2011-09-30

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