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MD3821G2 - Process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSl1-x)3 - Google Patents

Process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSl1-x)3

Info

Publication number
MD3821G2
MD3821G2 MDA20070230A MD20070230A MD3821G2 MD 3821 G2 MD3821 G2 MD 3821G2 MD A20070230 A MDA20070230 A MD A20070230A MD 20070230 A MD20070230 A MD 20070230A MD 3821 G2 MD3821 G2 MD 3821G2
Authority
MD
Moldova
Prior art keywords
base
photosensitive material
sxsl1
chalcogenide semiconductor
amorphous chalcogenide
Prior art date
Application number
MDA20070230A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD3821F1 (en
Inventor
Светлана БУЗУРНЮК
Виктор ВЕРЛАН
Михаил ЙОВУ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20070230A priority Critical patent/MD3821G2/en
Publication of MD3821F1 publication Critical patent/MD3821F1/en
Publication of MD3821G2 publication Critical patent/MD3821G2/en

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  • Optical Recording Or Reproduction (AREA)

Abstract

The invention relates to optoelectronics, namely to a process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSe1-x)3 that can be used as optical and holographic image recording medium, optical sensors, in microlithography etc.The process consists in that there are separately dissolved the As2S3 and As2 Se3 in monoethanolamine or in ethylenediamine at the temperature of 20...40°C, then the mixtures are cooled up to the room temperature and are mixed in a ratio determined by the value x, afterwards the mixture is deposited on a support and is dried in the air at the temperature up to 40°C, during 2 hours.
MDA20070230A 2007-08-23 2007-08-23 Process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSl1-x)3 MD3821G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20070230A MD3821G2 (en) 2007-08-23 2007-08-23 Process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSl1-x)3

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070230A MD3821G2 (en) 2007-08-23 2007-08-23 Process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSl1-x)3

Publications (2)

Publication Number Publication Date
MD3821F1 MD3821F1 (en) 2009-01-31
MD3821G2 true MD3821G2 (en) 2009-08-31

Family

ID=40347775

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20070230A MD3821G2 (en) 2007-08-23 2007-08-23 Process for obtaining photosensitive material on base of amorphous chalcogenide semiconductor As2(SxSl1-x)3

Country Status (1)

Country Link
MD (1) MD3821G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD594Z (en) * 2012-07-31 2013-09-30 Институт По Защите Растений И Экологического Сельского Хозяйства Анм Device for breeding beneficial insects

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050009225A1 (en) * 2003-07-10 2005-01-13 International Business Machines Corporation Hydrazine-free solution deposition of chalcogenide films

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050009225A1 (en) * 2003-07-10 2005-01-13 International Business Machines Corporation Hydrazine-free solution deposition of chalcogenide films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Chern G., Lauks I. Spin-coating amorphous chalcogenide films. J. Appl. Phys. 53(10), October, 1982, p. 6979-6982 *
Chern G.and Lauks I. Spin-coating amorphous chalcogenide films. J. Appl. Phys. 53(10), October, 1982, 6979-6982 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD594Z (en) * 2012-07-31 2013-09-30 Институт По Защите Растений И Экологического Сельского Хозяйства Анм Device for breeding beneficial insects

Also Published As

Publication number Publication date
MD3821F1 (en) 2009-01-31

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees